Graded index profiles and loss-induced single-mode characteristics in vertical-cavity surface-emitting lasers with petal-shape holey structure

doi:10.1088/1674-1056/20/2/024204

中国物理B ›› 2011, Vol. 20 ›› Issue (2): 24204-024204.doi: 10.1088/1674-1056/20/2/024204

Graded index profiles and loss-induced single-mode characteristics in vertical-cavity surface-emitting lasers with petal-shape holey structure

刘安金¹, 渠红伟¹, 陈微¹, 江斌¹, 周文君¹, 邢名欣¹, 郑婉华²

(1)Nano-optoelectronics Lab, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (2)Nano-optoelectronics Lab, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2010-07-07 修回日期:2010-07-29 出版日期:2011-02-15 发布日期:2011-02-15
基金资助:
Project supported by the National Key Basic Research Special Foundation of China (Grant No. 2011CB922000), the National Natural Science Foundation of China (Grant Nos. 61025025 and 60838003), and the National High Technology Research and Development Program of China (Grant Nos. 2007AA03Z410 and 2007AA03Z408).

Graded index profiles and loss-induced single-mode characteristics in vertical-cavity surface-emitting lasers with petal-shape holey structure

Liu An-Jin(刘安金)^a),Qu Hong-Wei(渠红伟)^a),Chen Wei(陈微)^a),Jiang Bin(江斌)^a), Zhou Wen-Jun(周文君)^a),Xing Ming-Xin(邢名欣)^a),and Zheng Wan-Hua(郑婉华)^a)b)^†

^a Nano-optoelectronics Lab, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; ^b State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2010-07-07 Revised:2010-07-29 Online:2011-02-15 Published:2011-02-15
Supported by:
Project supported by the National Key Basic Research Special Foundation of China (Grant No. 2011CB922000), the National Natural Science Foundation of China (Grant Nos. 61025025 and 60838003), and the National High Technology Research and Development Program of China (Grant Nos. 2007AA03Z410 and 2007AA03Z408).

摘要/Abstract

摘要： The 850-nm oxide-confined vertical-cavity surface-emitting lasers with petal-shape holey structures are presented. An area-weighted average refractive index model is given to analyse their effective index profiles, and the graded index distribution in the holey region is demonstrated. The index step between the optical aperture and the holey region is obtained which is related merely to the etching depth. Four types of holey vertical-cavity surface-emitting lasers with different parameters are fabricated as well as the conventional oxide-confined vertical-cavity surface-emitting laser. Compared with the conventional oxide-confined vertical-cavity surface-emitting laser without etched holes, the holey vertical-cavity surface-emitting laser possesses an improved beam quality due to its graded index distribution, but has a lower output power, higher threshold current and lower slope efficiency. With the hole number increased, the holey vertical-cavity surface-emitting laser can realize the single-mode operation throughout the entire current range, and reduces the beam divergence further. The loss mechanism is used to explain the single-mode characteristic, and the reduced beam divergence is attributed to the shallow etching. High coupling efficiency of 86% to a multi-mode fibre is achieved for the single-mode device in the experiment.

关键词: vertical-cavity surface-emitting lasers, single mode, low divergence angle, graded index profile

Abstract: The 850-nm oxide-confined vertical-cavity surface-emitting lasers with petal-shape holey structures are presented. An area-weighted average refractive index model is given to analyse their effective index profiles, and the graded index distribution in the holey region is demonstrated. The index step between the optical aperture and the holey region is obtained which is related merely to the etching depth. Four types of holey vertical-cavity surface-emitting lasers with different parameters are fabricated as well as the conventional oxide-confined vertical-cavity surface-emitting laser. Compared with the conventional oxide-confined vertical-cavity surface-emitting laser without etched holes, the holey vertical-cavity surface-emitting laser possesses an improved beam quality due to its graded index distribution, but has a lower output power, higher threshold current and lower slope efficiency. With the hole number increased, the holey vertical-cavity surface-emitting laser can realize the single-mode operation throughout the entire current range, and reduces the beam divergence further. The loss mechanism is used to explain the single-mode characteristic, and the reduced beam divergence is attributed to the shallow etching. High coupling efficiency of 86% to a multi-mode fibre is achieved for the single-mode device in the experiment.

Key words: vertical-cavity surface-emitting lasers, single mode, low divergence angle, graded index profile

中图分类号: (Semiconductor lasers; laser diodes)

42.55.Px

42.60.Jf (Beam characteristics: profile, intensity, and power; spatial pattern formation) 42.60.Pk (Continuous operation)

刘安金, 渠红伟, 陈微, 江斌, 周文君, 邢名欣, 郑婉华. Graded index profiles and loss-induced single-mode characteristics in vertical-cavity surface-emitting lasers with petal-shape holey structure[J]. 中国物理B, 2011, 20(2): 24204-024204.

Liu An-Jin(刘安金), Qu Hong-Wei(渠红伟), Chen Wei(陈微), Jiang Bin(江斌), Zhou Wen-Jun(周文君), Xing Ming-Xin(邢名欣), and Zheng Wan-Hua(郑婉华) . Graded index profiles and loss-induced single-mode characteristics in vertical-cavity surface-emitting lasers with petal-shape holey structure[J]. Chin. Phys. B, 2011, 20(2): 24204-024204.

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Graded index profiles and loss-induced single-mode characteristics in vertical-cavity surface-emitting lasers with petal-shape holey structure

Graded index profiles and loss-induced single-mode characteristics in vertical-cavity surface-emitting lasers with petal-shape holey structure

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