Synthesis of ZnFe2O4 nanomagnets by Fe-ion implantation into ZnO and post-annealing

doi:10.1088/1674-1056/20/12/127501

中国物理B ›› 2011, Vol. 20 ›› Issue (12): 127501-127501.doi: 10.1088/1674-1056/20/12/127501

Synthesis of ZnFe₂O₄ nanomagnets by Fe-ion implantation into ZnO and post-annealing

郭颖¹, 成枫锋², 法涛², 姚淑德², 潘峰³

(1)Department of Physics, Shaanxi University of Technology, Hanzhong 723001, China; (2)State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China; (3)State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China;Department of Physics, Shaanxi University of Technology, Hanzhong 723001, China

收稿日期:2011-07-10 修回日期:2011-07-28 出版日期:2011-12-15 发布日期:2011-12-15
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2010CB832904), the National Natural Science Foundation of China (Grant Nos. 10875007 and 11005005), and the Research Fund of Shaanxi University of Technology, China (Grant No. SLQ0815).

Synthesis of ZnFe₂O₄ nanomagnets by Fe-ion implantation into ZnO and post-annealing

Pan Feng(潘峰)^a)b), Guo Ying(郭颖)^b), Cheng Feng-Feng(成枫锋)^a), Fa Tao(法涛)^a), and Yao Shu-De(姚淑德)^a)†

^a State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China; ^b Department of Physics, Shaanxi University of Technology, Hanzhong 723001, China

Received:2011-07-10 Revised:2011-07-28 Online:2011-12-15 Published:2011-12-15
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2010CB832904), the National Natural Science Foundation of China (Grant Nos. 10875007 and 11005005), and the Research Fund of Shaanxi University of Technology, China (Grant No. SLQ0815).

摘要/Abstract

摘要： Fe ions of dose 8 × 10¹⁶ cm^-2 are implanted into a ZnO single crystal at 180 keV. Annealing at 1073 K leads to the formation of zinc ferrite (ZnFe₂O₄), which is verified by synchrotron radiation X-ray diffraction (SR-XRD) and X-ray photoelectron spectroscopy (XPS). The crystallographically oriented ZnFe₂O₄ is formed inside the ZnO with the orientation relationship of ZnFe₂O₄ (111)//ZnO (0001). Superconducting quantum interference device (SQUID) measurements show that the as-implanted and post-annealing samples are both ferromagnetic at 5 K. The synthesized ZnFe₂O₄ is superparamagnetic, with a blocking temperature (T_B = 25 K), indicated by zero field cooling and field cooling (ZFC/FC) measurements.

关键词: Fe implanted, ZnO, ZnFe₂O₄, superparamagnetic

Abstract: Fe ions of dose 8 × 10¹⁶ cm^-2 are implanted into a ZnO single crystal at 180 keV. Annealing at 1073 K leads to the formation of zinc ferrite (ZnFe₂O₄), which is verified by synchrotron radiation X-ray diffraction (SR-XRD) and X-ray photoelectron spectroscopy (XPS). The crystallographically oriented ZnFe₂O₄ is formed inside the ZnO with the orientation relationship of ZnFe₂O₄ (111)//ZnO (0001). Superconducting quantum interference device (SQUID) measurements show that the as-implanted and post-annealing samples are both ferromagnetic at 5 K. The synthesized ZnFe₂O₄ is superparamagnetic, with a blocking temperature (T_B = 25 K), indicated by zero field cooling and field cooling (ZFC/FC) measurements.

Key words: Fe implanted, ZnO, ZnFe₂O₄, superparamagnetic

中图分类号: (Magnetic semiconductors)

75.50.Pp

61.72.uj (III-V and II-VI semiconductors) 61.46.Df (Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)) 75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects)

潘峰, 郭颖, 成枫锋, 法涛, 姚淑德. Synthesis of ZnFe₂O₄ nanomagnets by Fe-ion implantation into ZnO and post-annealing[J]. 中国物理B, 2011, 20(12): 127501-127501.

Pan Feng(潘峰), Guo Ying(郭颖), Cheng Feng-Feng(成枫锋), Fa Tao(法涛), and Yao Shu-De(姚淑德) . Synthesis of ZnFe₂O₄ nanomagnets by Fe-ion implantation into ZnO and post-annealing[J]. Chin. Phys. B, 2011, 20(12): 127501-127501.

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Synthesis of ZnFe₂O₄ nanomagnets by Fe-ion implantation into ZnO and post-annealing

Synthesis of ZnFe₂O₄ nanomagnets by Fe-ion implantation into ZnO and post-annealing

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