Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode

doi:10.1088/1674-1056/20/11/118401

中国物理B ›› 2011, Vol. 20 ›› Issue (11): 118401-118401.doi: 10.1088/1674-1056/20/11/118401

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode

黄健华, 吕红亮, 张玉明, 张义门, 汤晓燕, 陈丰平, 宋庆文

School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

收稿日期:2010-09-03 修回日期:2011-06-26 出版日期:2011-11-15 发布日期:2011-11-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61006060) and the Shaanxi Provincial 13115 Innovation Engineering, China (Grant No. 2008ZDKG-30).

Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode

Huang Jian-Hua(黄健华)^†, Lü Hong-Liang(吕红亮), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门),Tang Xiao-Yan(汤晓燕), Chen Feng-Ping(陈丰平), and Song Qing-Wen(宋庆文)

School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

Received:2010-09-03 Revised:2011-06-26 Online:2011-11-15 Published:2011-11-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61006060) and the Shaanxi Provincial 13115 Innovation Engineering, China (Grant No. 2008ZDKG-30).

摘要/Abstract

摘要： In this paper, a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode (MPS) is investigated, which is a combination of a field plate, a junction termination extension and floating limiting rings. Optimization is performed on the terminal structure by using the ISE-TCAD. Further analysis shows that this structure can greatly reduce the sensitivity of the breakdown voltage to the doping concentration and can effectively suppress the effect of the interface charge compared with the structure of the junction termination extension. At the same time, the 4H-SiC MPS with this termination structure can reach a high and stable breakdown voltage.

Abstract: In this paper, a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode (MPS) is investigated, which is a combination of a field plate, a junction termination extension and floating limiting rings. Optimization is performed on the terminal structure by using the ISE-TCAD. Further analysis shows that this structure can greatly reduce the sensitivity of the breakdown voltage to the doping concentration and can effectively suppress the effect of the interface charge compared with the structure of the junction termination extension. At the same time, the 4H-SiC MPS with this termination structure can reach a high and stable breakdown voltage.

Key words: 4H-SiC, merged PiN/Schottky diode, junction termination technology, breakdown voltage

中图分类号: (Power electronics; power supply circuits)

84.30.Jc

85.30.Kk (Junction diodes) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))

黄健华, 吕红亮, 张玉明, 张义门, 汤晓燕, 陈丰平, 宋庆文. Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode[J]. 中国物理B, 2011, 20(11): 118401-118401.

Huang Jian-Hua(黄健华), Lü Hong-Liang(吕红亮), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门),Tang Xiao-Yan(汤晓燕), Chen Feng-Ping(陈丰平), and Song Qing-Wen(宋庆文) . Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode[J]. Chin. Phys. B, 2011, 20(11): 118401-118401.

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Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode

Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode

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