Enhanced etching of silicon dioxide guided by carbon nanotubes in HF solution

doi:10.1088/1674-1056/20/10/108103

中国物理B ›› 2011, Vol. 20 ›› Issue (10): 108103-108103.doi: 10.1088/1674-1056/20/10/108103

Enhanced etching of silicon dioxide guided by carbon nanotubes in HF solution

魏芹芹¹, 傅云义¹, 魏子钧¹, 张岩², 李彦², 赵华波³, 应轶群³, 严峰³, 张朝晖³

(1)Department of Microelectronics, Peking University, Beijing 100871, China; (2)Key Laboratory for Physics and Chemistry of Nanodevices, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; (3)State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

收稿日期:2011-05-11 修回日期:2011-06-09 出版日期:2011-10-15 发布日期:2011-10-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 90406007, 61076069, 60776053, and 10434010) and the National Basic Research Program of China (Grant No. 2007CB936800).

Enhanced etching of silicon dioxide guided by carbon nanotubes in HF solution

Zhao Hua-Bo(赵华波)^a), Ying Alex Yi-Qun(应轶群)^a), Yan Feng(严峰)^a), Wei Qin-Qin(魏芹芹)^c), Fu Yun-Yi(傅云义)^c), Zhang Yan(张岩)^b), Li Yan(李彦)^b), Wei Zi-Jun(魏子钧)^c), and Zhang Zhao-Hui(张朝晖)^a)^†

^a State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China; ^b Key Laboratory for Physics and Chemistry of Nanodevices, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; ^c Department of Microelectronics, Peking University, Beijing 100871, China

Received:2011-05-11 Revised:2011-06-09 Online:2011-10-15 Published:2011-10-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 90406007, 61076069, 60776053, and 10434010) and the National Basic Research Program of China (Grant No. 2007CB936800).

摘要/Abstract

摘要： This paper describes a new method to create nanoscale SiO₂ pits or channels using single-walled carbon nanotubes (SWNTs) in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO₂ channels can be prepared. The nanoscale SiO₂ patterns can also be created on the surface of three-dimensional (3D) SiO₂ substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO₂ has been qualitatively analysed using defects in SWNTs, combined with H₃O⁺ electric double layers around SWNTs in an HF solution.

关键词: carbon nanotube, silicon dioxide, HF wet etching, defects and electric double layers

Abstract: This paper describes a new method to create nanoscale SiO₂ pits or channels using single-walled carbon nanotubes (SWNTs) in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO₂ channels can be prepared. The nanoscale SiO₂ patterns can also be created on the surface of three-dimensional (3D) SiO₂ substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO₂ has been qualitatively analysed using defects in SWNTs, combined with H₃O⁺ electric double layers around SWNTs in an HF solution.

Key words: carbon nanotube, silicon dioxide, HF wet etching, defects and electric double layers

中图分类号: (Micro- and nanoscale pattern formation)

81.16.Rf

82.45.Jn (Surface structure, reactivity and catalysis) 81.65.Cf (Surface cleaning, etching, patterning) 82.37.Gk (STM and AFM manipulations of a single molecule)

赵华波, 应轶群, 严峰, 魏芹芹, 傅云义, 张岩, 李彦, 魏子钧, 张朝晖. Enhanced etching of silicon dioxide guided by carbon nanotubes in HF solution[J]. 中国物理B, 2011, 20(10): 108103-108103.

Zhao Hua-Bo(赵华波), Ying Alex Yi-Qun(应轶群), Yan Feng(严峰), Wei Qin-Qin(魏芹芹), Fu Yun-Yi(傅云义), Zhang Yan(张岩), Li Yan(李彦), Wei Zi-Jun(魏子钧), and Zhang Zhao-Hui(张朝晖) . Enhanced etching of silicon dioxide guided by carbon nanotubes in HF solution[J]. Chin. Phys. B, 2011, 20(10): 108103-108103.

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Enhanced etching of silicon dioxide guided by carbon nanotubes in HF solution

Enhanced etching of silicon dioxide guided by carbon nanotubes in HF solution

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