中国物理B ›› 2011, Vol. 20 ›› Issue (10): 106104-106104.doi: 10.1088/1674-1056/20/10/106104

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material

马志华, 曹权, 左玉华, 郑军, 薛春来, 成步文, 王启明   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2011-03-29 修回日期:2011-05-19 出版日期:2011-10-15 发布日期:2011-10-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61036001, 51072194, and 60906035).

Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material

Ma Zhi-Hua(马志华), Cao Quan(曹权), Zuo Yu-Hua(左玉华)†,Zheng Jun(郑军), Xue Chun-Lai(薛春来), Cheng Bu-Wen(成步文), and Wang Qi-Ming(王启明)   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2011-03-29 Revised:2011-05-19 Online:2011-10-15 Published:2011-10-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61036001, 51072194, and 60906035).

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摘要： The intermediate band (IB) solar cell is a promising third-generation solar cell that could possibly achieve very high efficiency above the Shockley-Queisser limit. One of the promising ways to synthesize IB material is to introduce heavily doped deep level impurities in conventional semiconductors. High-doped Ti with a concentration of 1020 cm-3-1021 cm-3 in the p-type top Si layer of silicon-on-insulator (SOI) substrate is obtained by ion implantation and rapid thermal annealing (RTA). Secondary ion mass spectrometry measurements confirm that the Ti concentration exceeds the theoretical Mott limit, the main requirement for the formation of an impurity intermediate band. Increased absorption is observed in the infrared (IR) region by Fourier transform infrared spectroscopy (FTIR) technology. By using a lateral p-i-n structure, an obvious infrared response in a range of 1100 nm-2000 nm is achieved in a heavily Ti-doped SOI substrate, suggesting that the improvement on IR photoresponse is a result of increased absorption in the IR. The experimental results indicate that heavily Ti-implanted Si can be used as a potential kind of intermediate-band photovoltaic material to utilize the infrared photons of the solar spectrum.

Abstract: The intermediate band (IB) solar cell is a promising third-generation solar cell that could possibly achieve very high efficiency above the Shockley-Queisser limit. One of the promising ways to synthesize IB material is to introduce heavily doped deep level impurities in conventional semiconductors. High-doped Ti with a concentration of 1020 cm-3-1021 cm-3 in the p-type top Si layer of silicon-on-insulator (SOI) substrate is obtained by ion implantation and rapid thermal annealing (RTA). Secondary ion mass spectrometry measurements confirm that the Ti concentration exceeds the theoretical Mott limit, the main requirement for the formation of an impurity intermediate band. Increased absorption is observed in the infrared (IR) region by Fourier transform infrared spectroscopy (FTIR) technology. By using a lateral p-i-n structure, an obvious infrared response in a range of 1100 nm-2000 nm is achieved in a heavily Ti-doped SOI substrate, suggesting that the improvement on IR photoresponse is a result of increased absorption in the IR. The experimental results indicate that heavily Ti-implanted Si can be used as a potential kind of intermediate-band photovoltaic material to utilize the infrared photons of the solar spectrum.

Key words: infrared response, ion implantation, rapid thermal annealing, intermediate band solar cell

中图分类号:  (Doping and impurity implantation)

  • 61.72.U-
78.40.Fy (Semiconductors)