Structural, electrical, and optical properties of ZnInO alloy thin films

doi:10.1088/1674-1056/20/10/106103

中国物理B ›› 2011, Vol. 20 ›› Issue (10): 106103-106103.doi: 10.1088/1674-1056/20/10/106103

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Structural, electrical, and optical properties of ZnInO alloy thin films

才玺坤, 原子健, 朱夏明, 王雄, 张兵坡, 邱东江, 吴惠桢

Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China

收稿日期:2011-02-09 修回日期:2011-05-04 出版日期:2011-10-15 发布日期:2011-10-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 10974174) and the Natural Science Foundation of Zhejiang Province of China (Grant Nos. Z6100117, Z1110057, and Y4080171).

Structural, electrical, and optical properties of ZnInO alloy thin films

Cai Xi-Kun(才玺坤), Yuan Zi-Jian(原子健), Zhu Xia-Ming(朱夏明), Wang Xiong(王雄), Zhang Bing-Po(张兵坡), Qiu Dong-Jiang(邱东江), and Wu Hui-Zhen(吴惠桢)^†

Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China

Received:2011-02-09 Revised:2011-05-04 Online:2011-10-15 Published:2011-10-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 10974174) and the Natural Science Foundation of Zhejiang Province of China (Grant Nos. Z6100117, Z1110057, and Y4080171).

摘要/Abstract

摘要： Indium zinc oxide (IZO) thin films with different percentages of In content (In/[In+Zn]) are synthesized on glass substrates by magnetron sputtering, and the structural, electrical and optical properties of IZO thin films deposited at different In₂O₃ target powers are investigated. IZO thin films grown at different In₂O₃ target sputtering powers show evident morphological variation and different grain sizes. As the In₂O₃ sputtering power rises, the grain size becomes larger and electrical mobility increases. The film grown with an In₂O₃ target power of 100 W displays the highest electrical mobility of 13.5 cm·V^-1·s^-1 and the lowest resistivity of 2.4 × 10^-3 Ω·cm. The average optical transmittance of the IZO thin film in the visible region reaches 80% and the band gap broadens with the increase of In₂O₃ target power, which is attributed to the increase in carrier concentration and is in accordance with Burstein-Moss shift theory.

Abstract: Indium zinc oxide (IZO) thin films with different percentages of In content (In/[In+Zn]) are synthesized on glass substrates by magnetron sputtering, and the structural, electrical and optical properties of IZO thin films deposited at different In₂O₃ target powers are investigated. IZO thin films grown at different In₂O₃ target sputtering powers show evident morphological variation and different grain sizes. As the In₂O₃ sputtering power rises, the grain size becomes larger and electrical mobility increases. The film grown with an In₂O₃ target power of 100 W displays the highest electrical mobility of 13.5 cm·V^-1·s^-1 and the lowest resistivity of 2.4 × 10^-3 Ω·cm. The average optical transmittance of the IZO thin film in the visible region reaches 80% and the band gap broadens with the increase of In₂O₃ target power, which is attributed to the increase in carrier concentration and is in accordance with Burstein-Moss shift theory.

Key words: indium-zinc oxide, magnetron sputtering, In content, optical properties, electrical properties

中图分类号: (Alloys )

61.66.Dk

68.55.ag (Semiconductors) 73.61.Ga (II-VI semiconductors) 78.66.Hf (II-VI semiconductors)

才玺坤, 原子健, 朱夏明, 王雄, 张兵坡, 邱东江, 吴惠桢. Structural, electrical, and optical properties of ZnInO alloy thin films[J]. 中国物理B, 2011, 20(10): 106103-106103.

Cai Xi-Kun(才玺坤), Yuan Zi-Jian(原子健), Zhu Xia-Ming(朱夏明), Wang Xiong(王雄), Zhang Bing-Po(张兵坡), Qiu Dong-Jiang(邱东江), and Wu Hui-Zhen(吴惠桢) . Structural, electrical, and optical properties of ZnInO alloy thin films[J]. Chin. Phys. B, 2011, 20(10): 106103-106103.

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Structural, electrical, and optical properties of ZnInO alloy thin films

Structural, electrical, and optical properties of ZnInO alloy thin films

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