Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Γ critical point

doi:10.1088/1674-1056/20/10/100301

中国物理B ›› 2011, Vol. 20 ›› Issue (10): 100301-100301.doi: 10.1088/1674-1056/20/10/100301

Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Γ critical point

王丽国, 申超, 郑厚植, 朱汇, 赵建华

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

收稿日期:2011-03-04 修回日期:2011-04-10 出版日期:2011-10-15 发布日期:2011-10-15
基金资助:
Project partly supported by the National Basic Research Program of China (Grant Nos. 2007CB924904 and 2011CB932901).

Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the $\varGamma$ critical point

Wang Li-Guo(王丽国), Shen Chao(申超), Zheng Hou-Zhi(郑厚植)^†, Zhu Hui(朱汇), and Zhao Jian-Hua(赵建华)

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

Received:2011-03-04 Revised:2011-04-10 Online:2011-10-15 Published:2011-10-15
Supported by:
Project partly supported by the National Basic Research Program of China (Grant Nos. 2007CB924904 and 2011CB932901).

摘要/Abstract

摘要： This paper describes an n-i-p-i-n model heterostructure with a manganese (Mn)-doped p-type base region to check the stability of a positively charged manganese A_Mn⁺ centre with two holes weakly bound by a negatively charged 3d⁵(Mn) core of a local spin S=5/2 in the framework of the effective mass approximation near the Γ critical point (k～0). By including the carrier screening effect, the ground state energy and the binding energy of the second hole in the positively charged centre A_Mn⁺ are calculated within a hole concentration range from 1 × 10¹⁶ cm^-3 to 1 × 10¹⁷ cm^-3, which is achievable by biasing the structure under photo-excitation. For comparison, the ground-state energy of a single hole in the neutral A_Mn⁰ centre is calculated in the same concentration range. It turns out that the binding energy of the second hole in the A_Mn⁺ centre varies from 9.27 meV to 4.57 meV. We propose that the presence of the A_Mn⁺ centre can be examined by measuring the photoluminescence from recombination of electrons in the conduction band with the bound holes in the A_Mn⁺ centre since a high frequency dielectric constant of $\varepsilon_{\infty} =10.66$ can be safely adopted in this case. The novel feature of the ability to tune the impurity level of the A_Mn⁺ centre makes it attractive for optically and electrically manipulating local magnetic spins in semiconductors.

关键词: charged acceptor centre, screening effect, exchange interaction

Abstract: This paper describes an n-i-p-i-n model heterostructure with a manganese (Mn)-doped p-type base region to check the stability of a positively charged manganese A_Mn⁺ centre with two holes weakly bound by a negatively charged 3d⁵(Mn) core of a local spin S=5/2 in the framework of the effective mass approximation near the Γ critical point (k～0). By including the carrier screening effect, the ground state energy and the binding energy of the second hole in the positively charged centre A_Mn⁺ are calculated within a hole concentration range from 1 × 10¹⁶ cm^-3 to 1 × 10¹⁷ cm^-3, which is achievable by biasing the structure under photo-excitation. For comparison, the ground-state energy of a single hole in the neutral A_Mn⁰ centre is calculated in the same concentration range. It turns out that the binding energy of the second hole in the A_Mn⁺ centre varies from 9.27 meV to 4.57 meV. We propose that the presence of the A_Mn⁺ centre can be examined by measuring the photoluminescence from recombination of electrons in the conduction band with the bound holes in the A_Mn⁺ centre since a high frequency dielectric constant of $\varepsilon_{\infty}=10.66$ can be safely adopted in this case. The novel feature of the ability to tune the impurity level of the A_Mn⁺ centre makes it attractive for optically and electrically manipulating local magnetic spins in semiconductors.

Key words: charged acceptor centre, screening effect, exchange interaction

中图分类号: (Quantum mechanics)

03.65.-w

61.72.S- (Impurities in crystals) 75.50.Pp (Magnetic semiconductors)

王丽国, 申超, 郑厚植, 朱汇, 赵建华. Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Γ critical point[J]. 中国物理B, 2011, 20(10): 100301-100301.

Wang Li-Guo(王丽国), Shen Chao(申超), Zheng Hou-Zhi(郑厚植), Zhu Hui(朱汇), and Zhao Jian-Hua(赵建华) . Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the $\varGamma$ critical point[J]. Chin. Phys. B, 2011, 20(10): 100301-100301.

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Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Γ critical point

Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the $\varGamma$ critical point

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