Shot noise of the spin inelastic tunneling through a quantum dot with single molecule-magnet

doi:10.1088/1674-1056/20/1/017307

中国物理B ›› 2011, Vol. 20 ›› Issue (1): 17307-017307.doi: 10.1088/1674-1056/20/1/017307

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Shot noise of the spin inelastic tunneling through a quantum dot with single molecule-magnet

常博, 梁九卿

Institute of Theoretical Physics and Department of Physics, Shanxi University, Taiyuan 030006, China

收稿日期:2010-06-29 修回日期:2010-08-26 出版日期:2011-01-15 发布日期:2011-01-15

Shot noise of the spin inelastic tunneling through a quantum dot with single molecule-magnet

Chang Bo(常博)and Liang Jiu-Qing(梁九卿)^†

Institute of Theoretical Physics and Department of Physics, Shanxi University, Taiyuan 030006, China

Received:2010-06-29 Revised:2010-08-26 Online:2011-01-15 Published:2011-01-15

摘要/Abstract

摘要： We have studied the quantum fluctuations of inelastic spin-electron scattering in quantum dot with an embedded biaxial single molecule-magnet and particularly investigated the zero-frequency shot noise and Fano factor in different magnetic fields. It is found that the shot noise and Fano factor exhibit a stepwise behaviour as bias increases in the presence of interaction between the electron and molecule-magnet for a weak magnetic field. As magnetic field becomes strong, a dip is displayed in the shot-noise-bias curve due to the suppression of inelastic shot noise caused by the quantum tunneling of magnetisation. Because of the spontaneous inelastic tunneling at zero bias, a small shot noise occurs, which results in the case of Fano factor F >> 1. Moreover, our results show that the sweeping speed can also influence the shot noise and Fano factor obviously.

Abstract: We have studied the quantum fluctuations of inelastic spin-electron scattering in quantum dot with an embedded biaxial single molecule-magnet and particularly investigated the zero-frequency shot noise and Fano factor in different magnetic fields. It is found that the shot noise and Fano factor exhibit a stepwise behaviour as bias increases in the presence of interaction between the electron and molecule-magnet for a weak magnetic field. As magnetic field becomes strong, a dip is displayed in the shot-noise-bias curve due to the suppression of inelastic shot noise caused by the quantum tunneling of magnetisation. Because of the spontaneous inelastic tunneling at zero bias, a small shot noise occurs, which results in the case of Fano factor F >> 1. Moreover, our results show that the sweeping speed can also influence the shot noise and Fano factor obviously.

Key words: quantum dot, shot noise, molecular magnet, quantum tunneling of spin

中图分类号: (Quantum dots)

73.63.Kv

74.78.Na (Mesoscopic and nanoscale systems) 75.45.+j (Macroscopic quantum phenomena in magnetic systems)

常博, 梁九卿. Shot noise of the spin inelastic tunneling through a quantum dot with single molecule-magnet[J]. 中国物理B, 2011, 20(1): 17307-017307.

Chang Bo(常博)and Liang Jiu-Qing(梁九卿). Shot noise of the spin inelastic tunneling through a quantum dot with single molecule-magnet[J]. Chin. Phys. B, 2011, 20(1): 17307-017307.

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Shot noise of the spin inelastic tunneling through a quantum dot with single molecule-magnet

Shot noise of the spin inelastic tunneling through a quantum dot with single molecule-magnet

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