中国物理B ›› 2009, Vol. 18 ›› Issue (9): 4025-4029.doi: 10.1088/1674-1056/18/9/068
周雪云1, 葛世慧1, 左亚路1, 肖玉华1, 张莉1, 李明杰1, 韩秀峰2, 温振超2
Zhou Xue-Yun(周雪云)a)†ger, Ge Shi-Hui(葛世慧)a)‡ger, Han Xiu-Feng(韩秀峰)b), Zuo Ya-Lu(左亚路)a), Xiao Yu-Hua(肖玉华)a), Wen Zhen-Chao(温振超)b), Zhang Li(张莉)a), and Li Ming-Jie(李明杰)a)
摘要: This paper obtains the room temperature ferromagnetism in Sn1-xFexO2 films fabricated by the Sol--Gel method. X-ray diffraction results show that Fe doping inhibits the growth of SnO2 and Fe3+ ions occupy the Sn sites. The measurement of resistance excludes the free carrier inducing ferromagnetism. Moreover, the temperature dependence of magnetization has been better fitted by the Curie--Weiss law and bound magnetic polaron (BMP) theory. An enhancement of ferromagnetism is achieved by annealing the samples with x=7.1% in H2, and a decrease of oxygen flow rate. All these results prove that the BMP model depending on defects can explain ferromagnetism in diluted magnetic oxides.
中图分类号: (Sol-gel processing, precipitation)