中国物理B ›› 2009, Vol. 18 ›› Issue (7): 3044-3048.doi: 10.1088/1674-1056/18/7/072

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A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er+ ions

丁武昌, 刘艳, 张云, 郭剑川, 左玉华, 成步文, 余金中, 王启明   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2008-12-15 修回日期:2009-01-07 出版日期:2009-07-20 发布日期:2009-07-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60336010) and the Major State Basic Research Program of China (Grant Nos 2006CB302802 and 2007CB613404).

A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er+ ions

Ding Wu-Chang(丁武昌)†, Liu Yan(刘艳), Zhang Yun(张云), Guo Jian-Chuan(郭剑川), Zuo Yu-Hua(左玉华), Cheng Bu-Wen(成步文), Yu Jin-Zhong(余金中), and Wang Qi-Ming(王启明)   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2008-12-15 Revised:2009-01-07 Online:2009-07-20 Published:2009-07-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60336010) and the Major State Basic Research Program of China (Grant Nos 2006CB302802 and 2007CB613404).

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摘要： This paper compares the properties of silicon oxide and nitride as host matrices for Er ions. Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system. After deposition, the films were implanted with Er3+ at different doses. Er-doped thermal grown silicon oxide films were prepared at the same time as references. Photoluminescence features of Er3+ were inspected systematically. It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe. However, a very high annealing temperature up to 1200~℃ is needed to optically activate Er3+, which may be the main obstacle to impede the application of Er-doped silicon nitride.

Abstract: This paper compares the properties of silicon oxide and nitride as host matrices for Er ions. Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system. After deposition, the films were implanted with Er3+ at different doses. Er-doped thermal grown silicon oxide films were prepared at the same time as references. Photoluminescence features of Er3+ were inspected systematically. It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe. However, a very high annealing temperature up to 1200 ℃ is needed to optically activate Er3+, which may be the main obstacle to impede the application of Er-doped silicon nitride.

Key words: Er doping, silicon nitride, photoluminescence

中图分类号:  (Other solid inorganic materials)

  • 78.55.Hx
52.77.Dq (Plasma-based ion implantation and deposition) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 78.66.Nk (Insulators) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)