中国物理B ›› 2009, Vol. 18 ›› Issue (11): 4667-4675.doi: 10.1088/1674-1056/18/11/010

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Strain distributions and electronic structure of three-dimensional InAs/GaAs quantum rings

刘玉敏, 俞重远, 贾博雍, 徐子欢, 姚文杰, 陈智辉, 芦鹏飞, 韩利红   

  1. Institute of Optical Communication and Optoelectronics, Beijing 100876, China;Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, Beijing 100876, China
  • 收稿日期:2008-07-31 修回日期:2009-04-13 出版日期:2009-11-20 发布日期:2009-11-20
  • 基金资助:
    Project supported by the National High Technology Research and Development Program of China (Grant No 2009AA03Z405), the National Natural Science Foundation of China (Grant Nos 60908028 and 60971068) and the High School Innovation and Introducing Talent Project of China (Grant No B07005).

Strain distributions and electronic structure of three-dimensional InAs/GaAs quantum rings

Liu Yu-Min(刘玉敏)†,Yu Zhong-Yuan(俞重远),Jia Bo-Yong(贾博雍), Xu Zi-Huan(徐子欢),Yao Wen-Jie(姚文杰),Chen Zhi-Hui(陈智辉), Lu Peng-Fei(芦鹏飞), and Han Li-Hong(韩利红)   

  1. Institute of Optical Communication and Optoelectronics, Beijing 100876, China;Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, Beijing 100876, China
  • Received:2008-07-31 Revised:2009-04-13 Online:2009-11-20 Published:2009-11-20
  • Supported by:
    Project supported by the National High Technology Research and Development Program of China (Grant No 2009AA03Z405), the National Natural Science Foundation of China (Grant Nos 60908028 and 60971068) and the High School Innovation and Introducing Talent Project of China (Grant No B07005).

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摘要： This paper presents a finite element calculation for the electronic structure and strain distribution of self-organized InAs/GaAs quantum rings. The strain distribution calculations are based on the continuum elastic theory. An ideal three-dimensional circular quantum ring model is adopted in this work. The electron and heavy-hole energy levels of the InAs/GaAs quantum rings are calculated by solving the three-dimensional effective mass Schr?dinger equation including the deformation potential and piezoelectric potential up to the second order induced by the strain. The calculated results show the importance of strain and piezoelectric effects, and these effects should be taken into consideration in analysis of the optoelectronic characteristics of strain quantum rings.

Abstract: This paper presents a finite element calculation for the electronic structure and strain distribution of self-organized InAs/GaAs quantum rings. The strain distribution calculations are based on the continuum elastic theory. An ideal three-dimensional circular quantum ring model is adopted in this work. The electron and heavy-hole energy levels of the InAs/GaAs quantum rings are calculated by solving the three-dimensional effective mass Schr?dinger equation including the deformation potential and piezoelectric potential up to the second order induced by the strain. The calculated results show the importance of strain and piezoelectric effects, and these effects should be taken into consideration in analysis of the optoelectronic characteristics of strain quantum rings.

Key words: quantum ring, strain distribution, electronic structure

中图分类号:  (Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)

  • 73.21.-b
62.25.-g (Mechanical properties of nanoscale systems) 62.20.D- (Elasticity) 81.40.Jj (Elasticity and anelasticity, stress-strain relations) 81.40.Lm (Deformation, plasticity, and creep) 62.20.F- (Deformation and plasticity)