中国物理B ›› 2009, Vol. 18 ›› Issue (1): 16-22.doi: 10.1088/1674-1056/18/1/003

• GENERAL • 上一篇    下一篇

The influences of thickness of spacing layer and the elastic anisotropy on the strain fields and band edges of InAs/GaAs conical shaped quantum dots

刘玉敏, 俞重远, 任晓敏   

  1. Institute of Optical Communication and Optoelectronics, Beijing University of Posts and Telecommunications, Beijing 100876, China;Key Laboratory of Optical Communication and Lightwave Technologies, Ministry of Education (Beijing University of Posts and Telecommunications), Beijing 100876, China
  • 收稿日期:2007-11-13 修回日期:2008-06-06 出版日期:2009-01-20 发布日期:2009-01-20
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No 2003CB314901), the National Natural Science Foundation of China (Grant No 60644004), and the High School Innovation and Introducing Talent Project of China (Grant No B07005).

The influences of thickness of spacing layer and the elastic anisotropy on the strain fields and band edges of InAs/GaAs conical shaped quantum dots

Liu Yu-Min(刘玉敏), Yu Zhong-Yuan(俞重远), and Ren Xiao-Min(任晓敏)   

  1. Institute of Optical Communication and Optoelectronics, Beijing University of Posts and Telecommunications, Beijing 100876, China;Key Laboratory of Optical Communication and Lightwave Technologies, Ministry of Education (Beijing University of Posts and Telecommunications), Beijing 100876, China
  • Received:2007-11-13 Revised:2008-06-06 Online:2009-01-20 Published:2009-01-20
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No 2003CB314901), the National Natural Science Foundation of China (Grant No 60644004), and the High School Innovation and Introducing Talent Project of China (Grant No B07005).

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摘要： Based on the continuum elastic theory, this paper presents a finite element analysis to investigate the influences of elastic anisotropy and thickness of spacing layer on the strain field distribution and band edges (both conduction band and valence band) of the InAs/GaAs conical shaped quantum dots. To illustrate these effects, we give detailed comparisons with the circumstances of isolated and stacking quantum dot for both anisotropic and isotropic elastic characteristics. The results show that, in realistic materials design and theoretical predication performances of the optoelectronic devices, both the elastic anisotropy and thickness of the spacing layer of stacked quantum dot should be taken into consideration.

Abstract: Based on the continuum elastic theory, this paper presents a finite element analysis to investigate the influences of elastic anisotropy and thickness of spacing layer on the strain field distribution and band edges (both conduction band and valence band) of the InAs/GaAs conical shaped quantum dots. To illustrate these effects, we give detailed comparisons with the circumstances of isolated and stacking quantum dot for both anisotropic and isotropic elastic characteristics. The results show that, in realistic materials design and theoretical predication performances of the optoelectronic devices, both the elastic anisotropy and thickness of the spacing layer of stacked quantum dot should be taken into consideration.

Key words: quantum dot, strain, electronic structure

中图分类号:  (Quantum dots)

  • 73.21.La
62.20.D- (Elasticity)