中国物理B ›› 2008, Vol. 17 ›› Issue (4): 1231-1236.doi: 10.1088/1674-1056/17/4/014

• ATOMIC AND MOLECULAR PHYSICS • 上一篇    下一篇

Photodetachment of H-- in an electric field between two parallel interfaces

王德华, 于永江   

  1. College of Physics and Electronic Engineering, Ludong University, Yantai 264025, China
  • 收稿日期:2007-07-17 修回日期:2007-10-22 出版日期:2008-04-20 发布日期:2008-04-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10604045).

Photodetachment of H-- in an electric field between two parallel interfaces

Wang De-Hua(王德华) and Yu Yong-Jiang(于永江)   

  1. College of Physics and Electronic Engineering, Ludong University, Yantai 264025, China
  • Received:2007-07-17 Revised:2007-10-22 Online:2008-04-20 Published:2008-04-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10604045).

摘要: By using the closed orbit theory, the photodetachment cross section of H- in a static electric field between two parallel elastic interfaces is derived and calculated. It is found that the photodetachment cross section depends on the electric field and the distance between the ion and the elastic interface. The oscillation of the cross section becomes more complicated than in the case of H- near one elastic interface. The results show that near the detachment threshold, the influence of the additional interface can be neglected. But with the increase of the energy, its influence becomes great. At some energies, the cross sections display sharp peaks, contrasting with the staircase structure when only one interface exists. This study provides a new understanding of the photodetachment process of H- in the presence of external field and interfaces.

Abstract: By using the closed orbit theory, the photodetachment cross section of H- in a static electric field between two parallel elastic interfaces is derived and calculated. It is found that the photodetachment cross section depends on the electric field and the distance between the ion and the elastic interface. The oscillation of the cross section becomes more complicated than in the case of H- near one elastic interface. The results show that near the detachment threshold, the influence of the additional interface can be neglected. But with the increase of the energy, its influence becomes great. At some energies, the cross sections display sharp peaks, contrasting with the staircase structure when only one interface exists. This study provides a new understanding of the photodetachment process of H- in the presence of external field and interfaces.

Key words: closed-orbit theory, photodetachment cross section

中图分类号:  (Interactions of atoms and molecules with surfaces)

  • 34.35.+a
34.50.Fa (Electronic excitation and ionization of atoms (including beam-foil excitation and ionization))