中国物理B ›› 2008, Vol. 17 ›› Issue (10): 3902-3906.doi: 10.1088/1674-1056/17/10/057

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Growth of Mn5Ge3 ultrathin film on Ge(111)

陈立军1, 王德勇1, 何 为1, 李庆安1, 成昭华1, 詹清峰2   

  1. (1)State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; (2)State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 收稿日期:2008-01-08 修回日期:2008-03-18 出版日期:2008-10-20 发布日期:2008-10-20

Growth of Mn5Ge3 ultrathin film on Ge(111)

Chen Li-Jun(陈立军)†, Wang De-Yong(王德勇), Zhan Qing-Feng(詹清峰), He Wei(何为), Li Qing-An(李庆安), and Cheng Zhao-Hua(成昭华)   

  1. State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • Received:2008-01-08 Revised:2008-03-18 Online:2008-10-20 Published:2008-10-20

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摘要： The growth of Mn$_{5}$Ge$_{3}$ ultrathin films with different thicknesses, prepared by solid phase epitaxy, is studied. The results of scanning tunnelling microscopy and low energy electron diffraction studies show that the film can be formed and it is terminated with a ($\sqrt 3\times \sqrt 3$) R$30^\circ$ surface reconstruction when the thickness of Mn exceeds 3 monolayers. The magnetic properties show that the Curie temperature is about 300\,K and the $T^{2}$-dependent behaviour is observed to remain up to 220\,K.

关键词: Mn_{5}Ge_{3}, magnetic semiconductors, scanning tunnelling microscopy, solid phase epitaxy

Abstract: The growth of Mn$_{5}$Ge$_{3}$ ultrathin films with different thicknesses, prepared by solid phase epitaxy, is studied. The results of scanning tunnelling microscopy and low energy electron diffraction studies show that the film can be formed and it is terminated with a ($\sqrt 3\times \sqrt 3$) R$30^\circ$ surface reconstruction when the thickness of Mn exceeds 3 monolayers. The magnetic properties show that the Curie temperature is about 300 K and the $T^{2}$-dependent behaviour is observed to remain up to 220 K.

Key words: Mn$_{5}$Ge$_{3}$, magnetic semiconductors, scanning tunnelling microscopy, solid phase epitaxy

中图分类号:  (Solid phase epitaxy; growth from solid phases)

  • 81.15.Np
75.70.Ak (Magnetic properties of monolayers and thin films) 68.55.-a (Thin film structure and morphology) 75.50.Pp (Magnetic semiconductors) 68.35.B- (Structure of clean surfaces (and surface reconstruction)) 75.30.Kz (Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.))