中国物理B ›› 2007, Vol. 16 ›› Issue (9): 2764-2768.doi: 10.1088/1009-1963/16/9/044
Formation mechanism of Ge nanocrystals embedded in SiO2 studied by fluorescence x-ray absorption fine structure
闫文盛, 李忠瑞, 孙治湖, 潘志云, 韦世强
- National Synchrotron Radiation Laboratory, University of Science {\& Technology of China, Hefei 230026, China
Formation mechanism of Ge nanocrystals embedded in SiO2 studied by fluorescence x-ray absorption fine structure
Yan Wen-Sheng(闫文盛)†,Li Zhong-Rui(李忠瑞), Sun Zhi-Hu(孙治湖), Pan Zhi-Yun(潘志云), and Wei Shi-Qiang(韦世强)
- National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei 230026, China
摘要： This paper reports that the Ge nanocrystals embedded in SiO$_{2}$ matrix are grown on Si(100) and quartz--glass substrates, and the formation mechanism is systematically studied by using fluorescence x-ray absorption fine structure (XAFS). It is found that the formation of Ge nanocrystals strongly depends on the properties of substrate materials. In the as-prepared samples with Ge molar content of 60{\%}, Ge atoms exist in amorphous Ge (about 36{\%}) and GeO$_{2 }$ (about 24{\%}) phases. At the annealing temperature of 1073 K, on the quartz--glass substrate Ge nanocrystals are generated from crystallization of amorphous Ge, rather than from the direct decomposition of GeO$_{2}$ in the as-deposited sample. However, on the Si(100) substrate, the Ge nanocrystals are generated partly from crystallization of amorphous Ge, and partly from GeO$_{2}$ phases through the permutation reaction with Si substrate. Quantitative analysis reveals that about 10{\%} of GeO$_{2}$ in the as-prepared sample are permuted with Si wafer to form Ge nanocrystals.
中图分类号: (Methods of micro- and nanofabrication and processing)
- 81.16.-c