中国物理B ›› 2006, Vol. 15 ›› Issue (12): 3033-3038.doi: 10.1088/1009-1963/15/12/043

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Research on the optimum hydrogenated silicon thin films for application in solar cells

雷青松1, 吴志猛1, 奚建平1, 耿新华2, 赵 颖2, 孙 健2   

  1. (1)Institute of Micro and Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030, China; (2)Institute of Photo-electronics, Nankai University, Tianjin 300071, China
  • 收稿日期:2005-10-31 修回日期:2006-01-20 出版日期:2006-12-20 发布日期:2006-12-20
  • 基金资助:
    Project supported by the State Key Program of Basic Research of China (Grant Nos~G2000028202 and G2000028203).

Research on the optimum hydrogenated silicon thin films for application in solar cells

Lei Qing-Song(雷青松)a)† , Wu Zhi-Meng(吴志猛)a), Geng Xin-Hua(耿新华)b), Zhao Ying(赵颖)b), Sun Jian(孙健)b), and Xi Jian-Ping(奚建平)a)   

  1. a Institute of Micro and Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030, China; b Institute of Photo-electronics, Nankai University, Tianjin 300071, China
  • Received:2005-10-31 Revised:2006-01-20 Online:2006-12-20 Published:2006-12-20
  • Supported by:
    Project supported by the State Key Program of Basic Research of China (Grant Nos~G2000028202 and G2000028203).

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摘要： Hydrogenated silicon (Si:H) thin films for application in solar cells were deposited by using very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at a substrate temperature of about 170℃. The electrical, structural, and optical properties of the films were investigated. The deposited films were then applied as i-layers for p-i-n single junction solar cells. The current--voltage (I-V) characteristics of the cells were measured before and after the light soaking. The results suggest that the films deposited near the transition region have an optimum properties for application in solar cells. The cell with an i-layer prepared near the transition region shows the best stable performance.

关键词: hydrogenated silicon thin film, transition region, Si:H thin film solar cell, stability

Abstract: Hydrogenated silicon (Si:H) thin films for application in solar cells were deposited by using very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at a substrate temperature of about 170℃. The electrical, structural, and optical properties of the films were investigated. The deposited films were then applied as i-layers for p-i-n single junction solar cells. The current--voltage (I-V) characteristics of the cells were measured before and after the light soaking. The results suggest that the films deposited near the transition region have an optimum properties for application in solar cells. The cell with an i-layer prepared near the transition region shows the best stable performance.

Key words: hydrogenated silicon thin film, transition region, Si:H thin film solar cell, stability

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
73.61.Cw (Elemental semiconductors) 78.30.Am (Elemental semiconductors and insulators) 78.66.Db (Elemental semiconductors and insulators) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 84.60.Jt (Photoelectric conversion)