中国物理B ›› 2006, Vol. 15 ›› Issue (10): 2385-2388.doi: 10.1088/1009-1963/15/10/033

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The optical properties of MgxZn1-xO thin films

张锡健, 马洪磊, 李玉香, 王卿璞, 马　瑾, 宗福建, 肖洪地   

  1. School of Physics and Microelectronics, Shandong University, Jinan 250100, China
  • 收稿日期:2006-01-18 修回日期:2006-03-23 出版日期:2006-10-20 发布日期:2006-10-20
  • 基金资助:
    Project supported by the Doctoral Program Foundation of State Education Department (Grant No 20020422056).

The optical properties of MgxZn1-xO thin films

Zhang Xi-Jian(张锡健), Ma Hong-Lei(马洪磊)†, Li Yu-Xiang(李玉香), Wang Qing-Pu(王卿璞), Ma Jin(马瑾), Zong Fu-Jian(宗福建), and Xiao Hong-Di(肖洪地)   

  1. School of Physics and Microelectronics, Shandong University, Jinan 250100, China
  • Received:2006-01-18 Revised:2006-03-23 Online:2006-10-20 Published:2006-10-20
  • Supported by:
    Project supported by the Doctoral Program Foundation of State Education Department (Grant No 20020422056).

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摘要： MgxZn1-xO thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at 60℃. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The refractive indices of MgxZn1-xO films are studied at room temperature by spectroscopic ellipsometry over the wavelength range of 400--760\,nm at the incident angle of 70℃. Both absorption coefficients and optical band gaps of MgxZn1-xO films are determined by the transmittance spectra. While Mg content is increasing, the absorption edges of MgxZn1-xO films shift to higher energies and band gaps linearly increase from 3.24.eV at x=0 to 3.90\,eV at x=0.30. These results provide important information for the design and modelling of ZnO/ MgxZn1-xO heterostructure optoelectronic devices.

关键词: MgxZn1-xO films, optical properties, sputtering

Abstract: MgxZn1-xO thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at 60℃. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The refractive indices of MgxZn1-xO films are studied at room temperature by spectroscopic ellipsometry over the wavelength range of 400--760 nm at the incident angle of 70°. Both absorption coefficients and optical band gaps of MgxZn1-xO films are determined by the transmittance spectra. While Mg content is increasing, the absorption edges of MgxZn1-xO films shift to higher energies and band gaps linearly increase from 3.24.eV at x=0 to 3.90 eV at x=0.30. These results provide important information for the design and modelling of ZnO/ MgxZn1-xO heterostructure optoelectronic devices.

Key words: MgxZn1-xO films, optical properties, sputtering

中图分类号:  (Optical properties of specific thin films)

  • 78.66.-w
68.55.-a (Thin film structure and morphology) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))