中国物理B ›› 2005, Vol. 14 ›› Issue (5): 1025-1031.doi: 10.1088/1009-1963/14/5/030
李飞飞, 李正中, 肖明文
Li Fei-Fei (李飞飞), Li Zheng-Zhong (李正中), Xiao Ming-Wen (肖明文)
摘要: In this paper, we study effects of temperature and electron effective mass within the barrier on the bias dependence and sign-change behavior of the tunneling magnetoresistance (TMR) in ferromagnetic junctions. A significant decrease of the tunneling magnetoresistance with elevating temperature is obtained, in accordance with experiments. In addition to the height of barrier potential \left( \phi\right) discussed in our previous papers, the electron effective mass \left( m_{B}\right) within the barrier region is found to be another important factor that physically controls the sign-change behavior of the TMR. The critical voltage (V_{c}) at which TMR changes sign will increase with \phi and decrease with m_{B}, respectively.Furthermore, both the zero-bias TMR and V_{c} will decrease if temperature rises. These results are hoped to be of practical use for experimental investigations.
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