中国物理B ›› 2005, Vol. 14 ›› Issue (5): 1025-1031.doi: 10.1088/1009-1963/14/5/030

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Effects of temperature and electron effective mass on bias-dependent tunnelling magnetoresistance

李飞飞, 李正中, 肖明文   

  1. Department of Physics,Nanjing University, Nanjing 210093, China
  • 收稿日期:2004-11-01 修回日期:2004-12-14 出版日期:2005-05-19 发布日期:2005-05-19
  • 基金资助:
    国家重点基础研究发展规划项目(973)资助 (001CB610602)

Effects of temperature and electron effective mass on bias-dependent tunnelling magnetoresistance

Li Fei-Fei (李飞飞), Li Zheng-Zhong (李正中), Xiao Ming-Wen (肖明文)   

  1. Department of Physics,Nanjing University, Nanjing 210093, China
  • Received:2004-11-01 Revised:2004-12-14 Online:2005-05-19 Published:2005-05-19
  • Supported by:
    国家重点基础研究发展规划项目(973)资助 (001CB610602)

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摘要： In this paper, we study effects of temperature and electron effective mass within the barrier on the bias dependence and sign-change behavior of the tunneling magnetoresistance (TMR) in ferromagnetic junctions. A significant decrease of the tunneling magnetoresistance with elevating temperature is obtained, in accordance with experiments. In addition to the height of barrier potential \left( \phi\right) discussed in our previous papers, the electron effective mass \left( m_{B}\right) within the barrier region is found to be another important factor that physically controls the sign-change behavior of the TMR. The critical voltage (V_{c}) at which TMR changes sign will increase with \phi and decrease with m_{B}, respectively.Furthermore, both the zero-bias TMR and V_{c} will decrease if temperature rises. These results are hoped to be of practical use for experimental investigations.

关键词: magnetotransport effects, quantumtunneling

Abstract: In this paper, we study effects of temperature and electron effective mass within the barrier on the bias dependence and sign-change behavior of the tunneling magnetoresistance (TMR) in ferromagnetic junctions. A significant decrease of the tunneling magnetoresistance with elevating temperature is obtained, in accordance with experiments. In addition to the height of barrier potential $(\phi)$   discussed in our previous papers, the electron effective mass $(m_{\rm B})$   within the barrier region is found to be another important factor that physically controls the sign-change behavior of the TMR. The critical voltage ($V_{\rm c}$) at which TMR changes sign will increase with $\phi$ and decrease with $m_{\rm B}$, respectively. Furthermore, both the zero-bias TMR and $V_{\rm c}$ will decrease if temperature rises. These results are hoped to be of practical use for experimental investigations.

Key words: magnetotransport effects, quantumtunneling

中图分类号: 

  • 7215G