中国物理B ›› 2017, Vol. 26 ›› Issue (12): 127308-127308.doi: 10.1088/1674-1056/26/12/127308

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Dynamic localization of two electrons in AC-driven triple quantum dots and quantum dot shuttles

Jin-Xian Qu(屈晋先), Su-Qing Duan(段素青), Ning Yang(杨宁)   

  1. 1. Beijing Computational Science Research Center, Beijing 100193, China;
    2. Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
  • 收稿日期:2017-05-08 修回日期:2017-08-16 出版日期:2017-12-05 发布日期:2017-12-05
  • 通讯作者: Ning Yang E-mail:yang_ning@iapcm.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11204016).

Dynamic localization of two electrons in AC-driven triple quantum dots and quantum dot shuttles

Jin-Xian Qu(屈晋先)1, Su-Qing Duan(段素青)2, Ning Yang(杨宁)2   

  1. 1. Beijing Computational Science Research Center, Beijing 100193, China;
    2. Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
  • Received:2017-05-08 Revised:2017-08-16 Online:2017-12-05 Published:2017-12-05
  • Contact: Ning Yang E-mail:yang_ning@iapcm.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11204016).

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摘要： We analyze the dynamic localization of two interacting electrons induced by alternating current electric fields in triple quantum dots and triple quantum dot shuttles. The calculation of the long-time averaged occupation probability shows that both the intra-and inter-dot Coulomb interaction can increase the localization of electrons even when the AC field is not very large. The mechanical oscillation of the quantum dot shuttles may keep the localization of electrons at a high level within a range if its frequency is quite a bit smaller than the AC field. However, the localization may be depressed if the frequency of the mechanical oscillation is the integer times of the frequency of the AC field. We also derive the analytical condition of two-electron localization both for triple quantum dots and quantum dot shuttles within the Floquet formalism.

关键词: dynamic localization, quantum dot shuttles

Abstract: We analyze the dynamic localization of two interacting electrons induced by alternating current electric fields in triple quantum dots and triple quantum dot shuttles. The calculation of the long-time averaged occupation probability shows that both the intra-and inter-dot Coulomb interaction can increase the localization of electrons even when the AC field is not very large. The mechanical oscillation of the quantum dot shuttles may keep the localization of electrons at a high level within a range if its frequency is quite a bit smaller than the AC field. However, the localization may be depressed if the frequency of the mechanical oscillation is the integer times of the frequency of the AC field. We also derive the analytical condition of two-electron localization both for triple quantum dots and quantum dot shuttles within the Floquet formalism.

Key words: dynamic localization, quantum dot shuttles

中图分类号:  (Electronic transport in nanoscale materials and structures)

  • 73.63.-b
74.55.+v (Tunneling phenomena: single particle tunneling and STM) 73.23.Hk (Coulomb blockade; single-electron tunneling)