中国物理B ›› 2001, Vol. 10 ›› Issue (11): 1049-1053.doi: 10.1088/1009-1963/10/11/311

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SUPERCONDUCTING FILM INJECTED BY IONS FROM PULSED ENERGETIC DENSE PLASMA SOURCE

徐凤枝, 陈赓华, 杨乾声, 叶茂福, 李银安   

  1. Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • 收稿日期:2001-05-29 修回日期:2001-07-11 出版日期:2001-11-15 发布日期:2005-06-12
  • 基金资助:
    Project supported by the National Centre for R & D on Superconductivity, the Ministry of Science and Technology of China (NKBRSF-G19990646), and the Association for Plasma Studies of China. Also, this work was performed on the theta-pinch equipment by cou

SUPERCONDUCTING FILM INJECTED BY IONS FROM PULSED ENERGETIC DENSE PLASMA SOURCE

Xu Feng-zhi (徐凤枝), Chen Geng-hua (陈赓华), Yang Qian-sheng (杨乾声), Ye Mao-fu (叶茂福), Li Yin-an (李银安)   

  1. Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • Received:2001-05-29 Revised:2001-07-11 Online:2001-11-15 Published:2005-06-12
  • Supported by:
    Project supported by the National Centre for R & D on Superconductivity, the Ministry of Science and Technology of China (NKBRSF-G19990646), and the Association for Plasma Studies of China. Also, this work was performed on the theta-pinch equipment by cou

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摘要： The oxygen and silicon ions have been obtained respectively from pulsed energetic dense oxygen plasma and silane plasma generated by electrodeless discharge. The oxygen ions have been injected into superconducting Nb films, and the Si ions into superconducting YBCO films in order to investigate the variation of their superconductivity with the ions injected into them. Auger profile data show that the injection depths range from 20 to 40nm in the films, depending on the injection condition and film material. The resistance－temperature relations (R-T curves) indicate that the superconductivity remains unchanged in the photoresist-masked part of the film, but is significantly changed in the exposed part. The evenness of the film surface remains unchanged after injection. This technique may serve as an alternative to the planar inhibiting fabrication technique in the fabrication of the multi-layer structure of superconducting films, and also possibly to the conventional plasma source ion implantation technique in material surface processing.

Abstract: The oxygen and silicon ions have been obtained respectively from pulsed energetic dense oxygen plasma and silane plasma generated by electrodeless discharge. The oxygen ions have been injected into superconducting Nb films, and the Si ions into superconducting YBCO films in order to investigate the variation of their superconductivity with the ions injected into them. Auger profile data show that the injection depths range from 20 to 40nm in the films, depending on the injection condition and film material. The resistance－temperature relations (R-T curves) indicate that the superconductivity remains unchanged in the photoresist-masked part of the film, but is significantly changed in the exposed part. The evenness of the film surface remains unchanged after injection. This technique may serve as an alternative to the planar inhibiting fabrication technique in the fabrication of the multi-layer structure of superconducting films, and also possibly to the conventional plasma source ion implantation technique in material surface processing.

Key words: superconducting film, ion injection, pulsed energetic dense plasma source

中图分类号:  (Multilayers, superlattices, heterostructures)

  • 74.78.Fk
52.50.Dg (Plasma sources)