Designing current-strain-assisted superconductor-ferromagnet multi-bit memories

doi:10.1088/1674-1056/ac7e36

中国物理B ›› 2022, Vol. 31 ›› Issue (11): 118501-118501.doi: 10.1088/1674-1056/ac7e36

Designing current-strain-assisted superconductor-ferromagnet multi-bit memories

Hasnain Mehdi Jafri^1,2, Jing Wang(王静)^1,2, Xiao-Ming Shi(施小明)^1,2, De-Shan Liang(梁德山)^1,2, and Hou-Bing Huang(黄厚兵)^1,2,†

1 School of Materials Science&Engineering, Beijing Institute of Technology, Beijing 100081, China;
2 Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China

收稿日期:2022-03-14 修回日期:2022-06-30 接受日期:2022-07-05 出版日期:2022-10-17 发布日期:2022-11-03
通讯作者: Hou-Bing Huang E-mail:hbhuang@bit.edu.cn
基金资助:
Project sponsored by the National Natural Science Foundation of China (Grant Nos. 52150410420 and 51972028) and the National Key Research and Development Program of China (Grant No. 2019YFA0307900).

Designing current-strain-assisted superconductor-ferromagnet multi-bit memories

Hasnain Mehdi Jafri^1,2, Jing Wang(王静)^1,2, Xiao-Ming Shi(施小明)^1,2, De-Shan Liang(梁德山)^1,2, and Hou-Bing Huang(黄厚兵)^1,2,†

1 School of Materials Science&Engineering, Beijing Institute of Technology, Beijing 100081, China;
2 Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China

Received:2022-03-14 Revised:2022-06-30 Accepted:2022-07-05 Online:2022-10-17 Published:2022-11-03
Contact: Hou-Bing Huang E-mail:hbhuang@bit.edu.cn
Supported by:
Project sponsored by the National Natural Science Foundation of China (Grant Nos. 52150410420 and 51972028) and the National Key Research and Development Program of China (Grant No. 2019YFA0307900).

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摘要/Abstract

摘要： Current superconducting memory devices lack the basic quality of high memory density for practical memories, mainly due to the size limitations of superconducting quantum interference devices. Here, we propose a superconductor-ferromagnet bilayer device with strain-pulse-assisted multi-bit ladder-type memory, by using strain-engineered ferromagnet domain structure to control carrier concentration in the superconductor, which is simulated by coupled Landau-Lifshitz-Gilbert and Ginzburg-Landau equations. Current- and strain-pulses are observed to deterministically control the resistivity of superconductor for one and two-bit device arrangements. The average carrier concentration of superconductor is observed to have multiple metastable states that can be controllably switched using current-pulse and strain-pulse to determine multiple resistivity states. These findings confirm the eligibility of superconductor-ferromagnet bilayers to be used as ladder-type multibit memories and open a new way for further theoretical and experimental investigations of the cryogenic memories.

关键词: superconductor-ferromagnet bilayer, cryogenic memories, superconducting memories, vortex memories

Abstract: Current superconducting memory devices lack the basic quality of high memory density for practical memories, mainly due to the size limitations of superconducting quantum interference devices. Here, we propose a superconductor-ferromagnet bilayer device with strain-pulse-assisted multi-bit ladder-type memory, by using strain-engineered ferromagnet domain structure to control carrier concentration in the superconductor, which is simulated by coupled Landau-Lifshitz-Gilbert and Ginzburg-Landau equations. Current- and strain-pulses are observed to deterministically control the resistivity of superconductor for one and two-bit device arrangements. The average carrier concentration of superconductor is observed to have multiple metastable states that can be controllably switched using current-pulse and strain-pulse to determine multiple resistivity states. These findings confirm the eligibility of superconductor-ferromagnet bilayers to be used as ladder-type multibit memories and open a new way for further theoretical and experimental investigations of the cryogenic memories.

Key words: superconductor-ferromagnet bilayer, cryogenic memories, superconducting memories, vortex memories

中图分类号: (Phenomenological theories (two-fluid, Ginzburg-Landau, etc.))

74.20.De

74.25.Uv (Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)) 74.78.-w (Superconducting films and low-dimensional structures) 74.78.Fk (Multilayers, superlattices, heterostructures)

Hasnain Mehdi Jafri, Jing Wang(王静), Xiao-Ming Shi(施小明), De-Shan Liang(梁德山), and Hou-Bing Huang(黄厚兵). Designing current-strain-assisted superconductor-ferromagnet multi-bit memories[J]. 中国物理B, 2022, 31(11): 118501-118501.

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Designing current-strain-assisted superconductor-ferromagnet multi-bit memories

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