中国物理B ›› 2000, Vol. 9 ›› Issue (7): 537-540.doi: 10.1088/1009-1963/9/7/013
李健, 王立, 黄信凡, 蒋明, 李伟, 王朝晔, 徐骏, 刘治国, 陈坤基
Li Jian (李健), Wang Li (王立), Huang Xin-fan (黄信凡), Jiang Ming (蒋明), Li Wei (李伟), Wang Zhao-ye (王朝晔), Xu Jun (徐骏), Liu Zhi-guo (刘治国), Chen Kun-ji (陈坤基)
摘要: A new method of phase-modulated excimer laser crystallization is adopted to fabricate the patterned nanometer-sized crystalline silicon (nc-Si) dots within the sandwiched structure (a-SiNx:H/a-Si:H/a-SiNx:H) films. The results of transmission electron microscopy, electron diffraction and Raman scattering show the ultra-thin and single-layer nc-Si films were patterned in the lateral direction and the size of crystallites is controlled by the thickness of as-deposited a-Si film in the longitudinal direction. The effects of the laser energy density on the structures of the samples and the crystallization mechanism are discussed.
中图分类号: (Gas lasers including excimer and metal-vapor lasers)