FABRICATION AND CHARACTERIZATION OF THE SIZE-CONTROLLED AND PATTERNED nc-Si DOTS

doi:10.1088/1009-1963/9/7/013

中国物理B ›› 2000, Vol. 9 ›› Issue (7): 537-540.doi: 10.1088/1009-1963/9/7/013

FABRICATION AND CHARACTERIZATION OF THE SIZE-CONTROLLED AND PATTERNED nc-Si DOTS

李健, 王立, 黄信凡, 蒋明, 李伟, 王朝晔, 徐骏, 刘治国, 陈坤基

National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China

收稿日期:2000-01-06 修回日期:2000-03-13 出版日期:2000-07-15 发布日期:2005-06-12
基金资助:
Project supported by the National Natural Science Foundation of China(Grant Nos. 69876019, 69676008 and 69890225) and by the Natural Science Foundation of Jiangsu Province (Grant No. BK97021).

FABRICATION AND CHARACTERIZATION OF THE SIZE-CONTROLLED AND PATTERNED nc-Si DOTS

Li Jian (李健), Wang Li (王立), Huang Xin-fan (黄信凡), Jiang Ming (蒋明), Li Wei (李伟), Wang Zhao-ye (王朝晔), Xu Jun (徐骏), Liu Zhi-guo (刘治国), Chen Kun-ji (陈坤基)

National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China

Received:2000-01-06 Revised:2000-03-13 Online:2000-07-15 Published:2005-06-12
Supported by:
Project supported by the National Natural Science Foundation of China(Grant Nos. 69876019, 69676008 and 69890225) and by the Natural Science Foundation of Jiangsu Province (Grant No. BK97021).

摘要/Abstract

摘要： A new method of phase-modulated excimer laser crystallization is adopted to fabricate the patterned nanometer-sized crystalline silicon (nc-Si) dots within the sandwiched structure (a-SiN_x:H/a-Si:H/a-SiN_x:H) films. The results of transmission electron microscopy, electron diffraction and Raman scattering show the ultra-thin and single-layer nc-Si films were patterned in the lateral direction and the size of crystallites is controlled by the thickness of as-deposited a-Si film in the longitudinal direction. The effects of the laser energy density on the structures of the samples and the crystallization mechanism are discussed.

Abstract: A new method of phase-modulated excimer laser crystallization is adopted to fabricate the patterned nanometer-sized crystalline silicon (nc-Si) dots within the sandwiched structure (a-SiN_x:H/a-Si:H/a-SiN_x:H) films. The results of transmission electron microscopy, electron diffraction and Raman scattering show the ultra-thin and single-layer nc-Si films were patterned in the lateral direction and the size of crystallites is controlled by the thickness of as-deposited a-Si film in the longitudinal direction. The effects of the laser energy density on the structures of the samples and the crystallization mechanism are discussed.

Key words: nanocrystalline silicon, constrained crystallization, laser-induced crystallization, sandwiched structure

中图分类号: (Gas lasers including excimer and metal-vapor lasers)

42.55.Lt

61.46.Hk (Nanocrystals) 68.55.-a (Thin film structure and morphology) 78.30.Am (Elemental semiconductors and insulators) 78.66.Db (Elemental semiconductors and insulators) 81.16.Rf (Micro- and nanoscale pattern formation)

李健, 王立, 黄信凡, 蒋明, 李伟, 王朝晔, 徐骏, 刘治国, 陈坤基. FABRICATION AND CHARACTERIZATION OF THE SIZE-CONTROLLED AND PATTERNED nc-Si DOTS[J]. 中国物理B, 2000, 9(7): 537-540.

Li Jian (李健), Wang Li (王立), Huang Xin-fan (黄信凡), Jiang Ming (蒋明), Li Wei (李伟), Wang Zhao-ye (王朝晔), Xu Jun (徐骏), Liu Zhi-guo (刘治国), Chen Kun-ji (陈坤基). FABRICATION AND CHARACTERIZATION OF THE SIZE-CONTROLLED AND PATTERNED nc-Si DOTS[J]. Chinese Physics, 2000, 9(7): 537-540.

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FABRICATION AND CHARACTERIZATION OF THE SIZE-CONTROLLED AND PATTERNED nc-Si DOTS

FABRICATION AND CHARACTERIZATION OF THE SIZE-CONTROLLED AND PATTERNED nc-Si DOTS

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