中国物理B ›› 1999, Vol. 8 ›› Issue (11): 853-859.doi: 10.1088/1004-423X/8/11/009

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A NEW METHOD TO ENHANCE THE MAGNETISM OF Fe OVERLAYER ON GaAs(100): SULFUR PASSIVATION USING CH3CSNH2

郭红志1, 陆尔东1, 徐法强1, 潘海斌1, 张新夷1, 徐彭寿2, 张发培2   

  1. (1)National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei 230029, China; (2)Structure Research Laboratory, University of Science & Technology of China, Chinese Academy of Sciences, Hefei 230026, China;National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei 230029, China
  • 收稿日期:1999-02-02 修回日期:1999-05-14 出版日期:1999-11-15 发布日期:2005-06-29
  • 基金资助:
    Project supported by the Doctoral Program Foundation of Institution of Higher Education of China (Grant No. 98035811) and the National Natural Science Foundation of China (Grant No. 19574042).

A NEW METHOD TO ENHANCE THE MAGNETISM OF Fe OVERLAYER ON GaAs(100): SULFUR PASSIVATION USING CH3CSNH2

XU PENG-SHOU (徐彭寿)ab, GUO HONG-ZHI (郭红志)b, ZHANG FA-PEI (张发培)ab, LU ER-DONG (陆尔东)b, XU FA-QIANG (徐法强)b, PAN HAI-BIN (潘海斌)b, ZHANG XIN-YI (张新夷)b#br#   

  1. a Structure Research Laboratory, University of Science & Technology of China, Chinese Academy of Sciences, Hefei 230026, China; b National Synchrotron Radiation Laboratory, University of Science & Technology of China, Hefei 230029, China
  • Received:1999-02-02 Revised:1999-05-14 Online:1999-11-15 Published:2005-06-29
  • Supported by:
    Project supported by the Doctoral Program Foundation of Institution of Higher Education of China (Grant No. 98035811) and the National Natural Science Foundation of China (Grant No. 19574042).

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摘要： Ferromagnetic resonance (FMR) has been used to investigat the magnetism of Fe overlayer on S-passivated GaAs(lO0) pretreated by CH3CSNH2. Comparing with the magnetism of Fe overlayer on clean GaAs(100), we find that sulfur passivation can prevent Aa diffusion into Fe overlayer and weaken the interaction of As and Fe. It results in enhancing the magnetism of Fe overlayer on GaAs(100). We also investigate the effects of the pre-annealing of S- pasaivated GaAs(100) substrate on the magnetism of Fe overlayers. The results show that the maximum effective magnetization can be obtained at annealing temperature of 400℃. According to the experimental results of synchrotron radiation photoemission, it can be explained by the change of chemical composition and surface structure of the passivation layer on GaAs(100) surface after the annealing.

Abstract: Ferromagnetic resonance (FMR) has been used to investigat the magnetism of Fe overlayer on S-passivated GaAs(lO0) pretreated by CH3CSNH2. Comparing with the magnetism of Fe overlayer on clean GaAs(100), we find that sulfur passivation can prevent Aa diffusion into Fe overlayer and weaken the interaction of As and Fe. It results in enhancing the magnetism of Fe overlayer on GaAs(100). We also investigate the effects of the pre-annealing of S- pasaivated GaAs(100) substrate on the magnetism of Fe overlayers. The results show that the maximum effective magnetization can be obtained at annealing temperature of 400℃. According to the experimental results of synchrotron radiation photoemission, it can be explained by the change of chemical composition and surface structure of the passivation layer on GaAs(100) surface after the annealing.

中图分类号:  (Magnetic properties of monolayers and thin films)

  • 75.70.Ak
81.65.Rv (Passivation) 76.50.+g (Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance) 61.72.Cc (Kinetics of defect formation and annealing) 75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects) 68.35.Fx (Diffusion; interface formation)