中国物理B ›› 1999, Vol. 8 ›› Issue (11): 845-852.doi: 10.1088/1004-423X/8/11/008

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SIZE AND SHAPE DEPENDENCE OF THE LOWEST CONDUCTION BAND STATES IN GaAs QUANTUM DOTS

赵国念1, 鲜于海清1, 宋健1, 任尚元1, 李效白2   

  1. (1)Department of Physics, Peking University, Beijing 100871, China; (2)State Key Laboratory of GaAs Integrated Circuits, Shijiazhuang 050002, China
  • 收稿日期:1999-04-27 出版日期:1999-11-15 发布日期:2005-06-29
  • 基金资助:
    Project supported by the State Key Laboratory of GaAs Integrated Circuits of China, the National Natural Science Foundation of China (Grant Nos. 19574008 and 19774001), the National "Climb" Program on the Science and Technology of Nanomaterials, China.

SIZE AND SHAPE DEPENDENCE OF THE LOWEST CONDUCTION BAND STATES IN GaAs QUANTUM DOTS

ZHAO GUO-NIAN (赵国念)a, XIAN-YU HAI-QING (鲜于海清)a, SONG JIAN (宋健)a, LI XIAO-BAI (任尚元)b, REN SHANG-YUAN (李效白)a   

  1. a Department of Physics, Peking University, Beijing 100871, China; b State Key Laboratory of GaAs Integrated Circuits, Shijiazhuang 050002, China
  • Received:1999-04-27 Online:1999-11-15 Published:2005-06-29
  • Supported by:
    Project supported by the State Key Laboratory of GaAs Integrated Circuits of China, the National Natural Science Foundation of China (Grant Nos. 19574008 and 19774001), the National "Climb" Program on the Science and Technology of Nanomaterials, China.

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摘要： Using a recently developed new scheme, we investigated the electronic structure of the lowest conduction band states of cuboid GaAs quantum dots with different shapes and sizes in a wide range from 4 to 120a (a is the lattice constant). The critical edge length of the direct/indirect crossover in GaAs cuboid quantum dots depends on the size and shape of the quantum dots. As a deduction we also discussed the critical size of dlrect/indirect transition in GaAs quantum wires and thin films.

Abstract: Using a recently developed new scheme, we investigated the electronic structure of the lowest conduction band states of cuboid GaAs quantum dots with different shapes and sizes in a wide range from 4 to 120a (a is the lattice constant). The critical edge length of the direct/indirect crossover in GaAs cuboid quantum dots depends on the size and shape of the quantum dots. As a deduction we also discussed the critical size of dlrect/indirect transition in GaAs quantum wires and thin films.

中图分类号:  (Quantum dots)

  • 73.21.La
68.65.Hb (Quantum dots (patterned in quantum wells)) 68.65.La (Quantum wires (patterned in quantum wells)) 68.55.-a (Thin film structure and morphology)