Formation of crystalline Si9C15 nano-islands and Si9C15/graphene heterostructures on Ru(0001)

doi:10.1088/1674-1056/ae4c6f

中国物理B ›› 2026, Vol. 35 ›› Issue (5): 56801-056801.doi: 10.1088/1674-1056/ae4c6f

Formation of crystalline Si₉C₁₅ nano-islands and Si₉C₁₅/graphene heterostructures on Ru(0001)

Lijing Huang(黄丽静)^1,2,†, Yumeng Li(李雨萌)^1,2,†, Hongqin Xiao(肖洪钦)^1,2, Yuxuan He(何昱萱)^1,2, Geng Li(李更)^1,2,3,‡, and Hong-Jun Gao(高鸿钧)^1,2,3

1 Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 Hefei National Laboratory, Hefei 230088, China

收稿日期:2026-01-16 修回日期:2026-02-22 接受日期:2026-03-03 发布日期:2026-04-29
通讯作者: Geng Li,E-mail:gengli.iop@iphy.ac.cn E-mail:gengli.iop@iphy.ac.cn
基金资助:
The work is supported by the National Key Research and Development Project of China (Grant Nos. 2024YFA1207702 and 2022YFA1204100), the National Natural Science Foundation of China (Grant No. 62488201), the CAS Project for Young Scientists in Basic Research (Grant No. YSBR-003), and the Quantum Science and Technology-National Science and Technology Major Project (Grant No. 2021ZD0302700).

Formation of crystalline Si₉C₁₅ nano-islands and Si₉C₁₅/graphene heterostructures on Ru(0001)

Lijing Huang(黄丽静)^1,2,†, Yumeng Li(李雨萌)^1,2,†, Hongqin Xiao(肖洪钦)^1,2, Yuxuan He(何昱萱)^1,2, Geng Li(李更)^1,2,3,‡, and Hong-Jun Gao(高鸿钧)^1,2,3

1 Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 Hefei National Laboratory, Hefei 230088, China

Received:2026-01-16 Revised:2026-02-22 Accepted:2026-03-03 Published:2026-04-29
Contact: Geng Li,E-mail:gengli.iop@iphy.ac.cn E-mail:gengli.iop@iphy.ac.cn
Supported by:
The work is supported by the National Key Research and Development Project of China (Grant Nos. 2024YFA1207702 and 2022YFA1204100), the National Natural Science Foundation of China (Grant No. 62488201), the CAS Project for Young Scientists in Basic Research (Grant No. YSBR-003), and the Quantum Science and Technology-National Science and Technology Major Project (Grant No. 2021ZD0302700).

摘要/Abstract

摘要： Two-dimensional silicon carbides have attracted increasing interest due to their highly tunable band structures and rich physical properties. Among them, Si$_{9}$C$_{15}$ is particularly notable for its intrinsic auxeticity, strongly anisotropic carrier mobility, and pronounced optical and thermoelectric responses. However, the controlled growth of Si$_{9}$C$_{15}$ nano-islands has remained a challenge. Here, we report a novel growth technique for Si$_{9}$C$_{15}$ nano-islands. By exploiting the mild segregation of carbon atoms from a Ru(0001) substrate, we fabricate discrete, crystalline Si$_{9}$C$_{15}$ nano-islands at temperatures as low as $\sim 400 ^\circ$C. Spectroscopic measurements reveal a spatial modulation of the local work function across the nano-island, which we attribute to the periodic potential landscape of the Si$_{9}$C$_{15}$ lattice. Furthermore, we demonstrate that this island morphology enables the construction of Si$_{9}$C$_{15}$/graphene lateral heterostructures. Our work establishes a new pathway for fabricating Si$_{9}$C$_{15}$ nanostructures as well as the heterostructures.

关键词: Si$_{9}$C$_{15}$, nano-islands, low-temperature growth, heterostructure

Abstract: Two-dimensional silicon carbides have attracted increasing interest due to their highly tunable band structures and rich physical properties. Among them, Si$_{9}$C$_{15}$ is particularly notable for its intrinsic auxeticity, strongly anisotropic carrier mobility, and pronounced optical and thermoelectric responses. However, the controlled growth of Si$_{9}$C$_{15}$ nano-islands has remained a challenge. Here, we report a novel growth technique for Si$_{9}$C$_{15}$ nano-islands. By exploiting the mild segregation of carbon atoms from a Ru(0001) substrate, we fabricate discrete, crystalline Si$_{9}$C$_{15}$ nano-islands at temperatures as low as $\sim 400 ^\circ$C. Spectroscopic measurements reveal a spatial modulation of the local work function across the nano-island, which we attribute to the periodic potential landscape of the Si$_{9}$C$_{15}$ lattice. Furthermore, we demonstrate that this island morphology enables the construction of Si$_{9}$C$_{15}$/graphene lateral heterostructures. Our work establishes a new pathway for fabricating Si$_{9}$C$_{15}$ nanostructures as well as the heterostructures.

Key words: Si$_{9}$C$_{15}$, nano-islands, low-temperature growth, heterostructure

中图分类号: (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)

68.65.-k

61.46.-w (Structure of nanoscale materials) 68.37.Ef (Scanning tunneling microscopy (including chemistry induced with STM)) 73.22.-f (Electronic structure of nanoscale materials and related systems)

Lijing Huang(黄丽静), Yumeng Li(李雨萌), Hongqin Xiao(肖洪钦), Yuxuan He(何昱萱), Geng Li(李更), and Hong-Jun Gao(高鸿钧). Formation of crystalline Si₉C₁₅ nano-islands and Si₉C₁₅/graphene heterostructures on Ru(0001)[J]. 中国物理B, 2026, 35(5): 56801-056801.

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Formation of crystalline Si₉C₁₅ nano-islands and Si₉C₁₅/graphene heterostructures on Ru(0001)

Formation of crystalline Si₉C₁₅ nano-islands and Si₉C₁₅/graphene heterostructures on Ru(0001)

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