中国物理B ›› 2025, Vol. 34 ›› Issue (8): 88102-088102.doi: 10.1088/1674-1056/adce9d

所属专题： SPECIAL TOPIC — Structures and properties of materials under high pressure

• • 上一篇    下一篇

Pressure-induced metallization and Lifshitz transition in quasi-one-dimensional TiSe3 single crystal

Zhenhai Yu(于振海)1,†, Yunguan Ye(叶运观)1,†, Pengtao Yang(杨芃焘)2,†, Yiming Wang(王弈铭)3,†, Liucheng Chen(陈刘城)2, Chenglin Li(李承霖)2, Jian Yuan(袁健)1, Ziyi Liu(刘子儀)2, Zhiwei Shen(申志伟)4, Shaojie Wang(王邵杰)4, Mingtao Li(李明涛)3, Chaoyang Chu(楚朝阳)1, Xia Wang(王霞)5, Jun Li(李俊)2, Lin Wang(王霖)4,‡, Wenge Yang(杨文革)3,§, and Yanfeng Guo(郭艳峰)1,6,¶   

  1. 1 School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
    2 Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China;
    4 Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China;
    5 Analytical Instrumentation Center, School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
    6 ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
  • 收稿日期:2025-02-26 修回日期:2025-04-01 接受日期:2025-04-21 出版日期:2025-07-17 发布日期:2025-08-05
  • 通讯作者: Lin Wang, Wenge Yang, Yanfeng Guo E-mail:linwang@ysu.edu.cn;yangwg@hpstar.ac.cn;guoyf@shanghaitech.edu.cn
  • 基金资助:
    The authors acknowledge the National Key R&D Program of China (Grant Nos. 2023YFA1406100 and 2024YFA1400066). Y. Guo acknowledges the Open Research Fund of Beijing National Laboratory for Condensed Matter Physics (Grant No. 2023BNLCMPKF002). L. Wang was mainly supported by the National Natural Science Foundation of China (Grant Nos. 52288102 and 52090020) and the S&T Program of Hebei (Grant No. 225A1102D). Z. Yu acknowledges the Open Projects from the State Key Laboratory of Metastable Materials Science and Technology, Yanshan University (Grant No. 202301).

Pressure-induced metallization and Lifshitz transition in quasi-one-dimensional TiSe3 single crystal

Zhenhai Yu(于振海)1,†, Yunguan Ye(叶运观)1,†, Pengtao Yang(杨芃焘)2,†, Yiming Wang(王弈铭)3,†, Liucheng Chen(陈刘城)2, Chenglin Li(李承霖)2, Jian Yuan(袁健)1, Ziyi Liu(刘子儀)2, Zhiwei Shen(申志伟)4, Shaojie Wang(王邵杰)4, Mingtao Li(李明涛)3, Chaoyang Chu(楚朝阳)1, Xia Wang(王霞)5, Jun Li(李俊)2, Lin Wang(王霖)4,‡, Wenge Yang(杨文革)3,§, and Yanfeng Guo(郭艳峰)1,6,¶   

  1. 1 School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
    2 Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China;
    3 Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China;
    4 Center for High Pressure Science (CHiPS), State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China;
    5 Analytical Instrumentation Center, School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China;
    6 ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
  • Received:2025-02-26 Revised:2025-04-01 Accepted:2025-04-21 Online:2025-07-17 Published:2025-08-05
  • Contact: Lin Wang, Wenge Yang, Yanfeng Guo E-mail:linwang@ysu.edu.cn;yangwg@hpstar.ac.cn;guoyf@shanghaitech.edu.cn
  • Supported by:
    The authors acknowledge the National Key R&D Program of China (Grant Nos. 2023YFA1406100 and 2024YFA1400066). Y. Guo acknowledges the Open Research Fund of Beijing National Laboratory for Condensed Matter Physics (Grant No. 2023BNLCMPKF002). L. Wang was mainly supported by the National Natural Science Foundation of China (Grant Nos. 52288102 and 52090020) and the S&T Program of Hebei (Grant No. 225A1102D). Z. Yu acknowledges the Open Projects from the State Key Laboratory of Metastable Materials Science and Technology, Yanshan University (Grant No. 202301).

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摘要： The transition metal trichalcogenides (TMTs) with quasi-one-dimensional (quasi-1D) layered crystal structure represent a unique platform to explore intriguing physical properties. Herein, we report the successful growth of a new TMT TiSe$_{3}$ single crystal by using a high-pressure and high-temperature technique. The crystal structure of TiSe$_{3}$ was determined by measuring the single-crystal x-ray diffraction and selected area electron diffraction. The 1D chain-like structure along the $b$-axis is formed by the TiSe$_{6}$ prisms which share their tops and bottoms with each other. TiSe$_{3}$ is a narrow band gap semiconductor with electron-type carriers under ambient conditions identified by the electrical and Hall effect measurements. It exhibits a pressure-induced semiconductor-to-metal transition around 4 GPa. As the pressure further increases to $\sim 6 $ GPa, a pressure-induced Lifshitz transition occurs, as indicated by the electrical transport measurements, high-pressure crystal structure characterizations, and electronic band structure calculations.

关键词: high-pressure synthesis, transition metal trichalcogenides, quasi-one-dimensional layered crystal structure, Lifshitz transition

Abstract: The transition metal trichalcogenides (TMTs) with quasi-one-dimensional (quasi-1D) layered crystal structure represent a unique platform to explore intriguing physical properties. Herein, we report the successful growth of a new TMT TiSe$_{3}$ single crystal by using a high-pressure and high-temperature technique. The crystal structure of TiSe$_{3}$ was determined by measuring the single-crystal x-ray diffraction and selected area electron diffraction. The 1D chain-like structure along the $b$-axis is formed by the TiSe$_{6}$ prisms which share their tops and bottoms with each other. TiSe$_{3}$ is a narrow band gap semiconductor with electron-type carriers under ambient conditions identified by the electrical and Hall effect measurements. It exhibits a pressure-induced semiconductor-to-metal transition around 4 GPa. As the pressure further increases to $\sim 6 $ GPa, a pressure-induced Lifshitz transition occurs, as indicated by the electrical transport measurements, high-pressure crystal structure characterizations, and electronic band structure calculations.

Key words: high-pressure synthesis, transition metal trichalcogenides, quasi-one-dimensional layered crystal structure, Lifshitz transition

中图分类号:  (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)

  • 81.10.-h
61.50.Ah (Theory of crystal structure, crystal symmetry; calculations and modeling) 68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties) 61.50.Ks (Crystallographic aspects of phase transformations; pressure effects)