Observation of distinct Kondo effect and anomalous Hall effect in V self-intercalated layered antiferromagnet V5S8 crystals

doi:10.1088/1674-1056/add5cd

中国物理B ›› 2025, Vol. 34 ›› Issue (8): 87303-087303.doi: 10.1088/1674-1056/add5cd

Observation of distinct Kondo effect and anomalous Hall effect in V self-intercalated layered antiferromagnet V₅S₈ crystals

Yaofeng Xie(谢耀锋)^1,2,†, Senhao Lv(吕森浩)^1,†, Qi Qi(齐琦)^1,2, Guojing Hu(胡国静)¹, Ke Zhu(祝轲)^1,2, Zhen Zhao(赵振)¹, Guoyu Xian(冼国裕)³, Yechao Han(韩烨超)², Ruwen Wang(王汝文)^1,2, Chenyu Bai(白晨宇)^1,2, Lihong Bao(鲍丽宏)^1,2, Xiao Lin(林晓)², Hui Guo(郭辉)^1,2,‡, Haitao Yang(杨海涛)^1,2,§, and Hong-Jun Gao(高鸿钧)^1,2

1 Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China

收稿日期:2025-03-24 修回日期:2025-04-20 接受日期:2025-05-08 出版日期:2025-07-17 发布日期:2025-08-05
通讯作者: Hui Guo, Haitao Yang E-mail:guohui@iphy.ac.cn;htyang@iphy.ac.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant No. 2022YFA1204100), the National Natural Science Foundation of China (Grant Nos. 62488201 and 1240041502), the CAS Project for Young Scientists in Basic Research (Grant No. YSBR-003), the Chinese Academy of Sciences (Grant No. XDB33030100), and the Innovation Program of Quantum Science and Technology (Grant No. 2021ZD0302700).

Observation of distinct Kondo effect and anomalous Hall effect in V self-intercalated layered antiferromagnet V₅S₈ crystals

1 Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China

Received:2025-03-24 Revised:2025-04-20 Accepted:2025-05-08 Online:2025-07-17 Published:2025-08-05
Contact: Hui Guo, Haitao Yang E-mail:guohui@iphy.ac.cn;htyang@iphy.ac.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant No. 2022YFA1204100), the National Natural Science Foundation of China (Grant Nos. 62488201 and 1240041502), the CAS Project for Young Scientists in Basic Research (Grant No. YSBR-003), the Chinese Academy of Sciences (Grant No. XDB33030100), and the Innovation Program of Quantum Science and Technology (Grant No. 2021ZD0302700).

1. 2025-087303-SI.pdf(1434KB)

摘要/Abstract

摘要： Vanadium-based transition metal chalcogenides V$_{{m}}{X}_{{n}}$ ($X ={\rm S}$, Se, Te) with their distinctive quantum effects, tunable magnetism, spin-orbit coupling, and high carrier mobility are a valuable platform to explore the interplay between magnetism and electronic correlations, especially with tunable structural phases and magnetic properties through stoichiometric variations, making them ideal candidates for advanced device applications. Here, we report the synthesis of high-quality V$_{{5+x}}$S$_{8}$ single crystals with different concentrations of self-intercalated vanadium. V$_{{5+x}}$S$_{{8}}$ crystals show an antiferromagnetic behavior and a spin-flop-like transition below $T_{\rm N}$ of 30.6 K. The high-quality V$_{{5+x}}$S$_{{8}}$ single crystals exhibit a large negative magnetoresistance of 12.3% at 2 K. Interestingly, V$_{{5+x}}$S$_{{8}}$ crystals show an obvious low-temperature resistance upturn that gradually levels off with the increasing magnetic field, attributed to the Kondo effect arising from the interaction between conduction electrons and embedded vanadium magnetic impurities. With increasing V doping, the antiferromagnetic interactions intensify, weakening the coupling between the local moments and conduction electrons, which in turn lowers the Kondo temperature ($T_{\rm K}$). Furthermore, the anomalous Hall effect is observed in V$_{{5.73}}$S$_{{8}}$, with an anomalous Hall conductivity (AHC) of 50.46 $\Omega^{{-1}}\cdot$cm$^-1$ and anomalous Hall angle of 0.73% at 2 K. Our findings offer valuable insights into the mechanisms of the Kondo effect and anomalous Hall effect in self-intercalated transition metal chalcogenides with complex magnetism and electronic correlation effects.

关键词: V$_{5+x}$S$_{8}$ crystals, antiferromagnetic, negative magnetoresistance, Kondo effect, anomalous Hall effect

Abstract: Vanadium-based transition metal chalcogenides V$_{{m}}{X}_{{n}}$ ($X ={\rm S}$, Se, Te) with their distinctive quantum effects, tunable magnetism, spin-orbit coupling, and high carrier mobility are a valuable platform to explore the interplay between magnetism and electronic correlations, especially with tunable structural phases and magnetic properties through stoichiometric variations, making them ideal candidates for advanced device applications. Here, we report the synthesis of high-quality V$_{{5+x}}$S$_{8}$ single crystals with different concentrations of self-intercalated vanadium. V$_{{5+x}}$S$_{{8}}$ crystals show an antiferromagnetic behavior and a spin-flop-like transition below $T_{\rm N}$ of 30.6 K. The high-quality V$_{{5+x}}$S$_{{8}}$ single crystals exhibit a large negative magnetoresistance of 12.3% at 2 K. Interestingly, V$_{{5+x}}$S$_{{8}}$ crystals show an obvious low-temperature resistance upturn that gradually levels off with the increasing magnetic field, attributed to the Kondo effect arising from the interaction between conduction electrons and embedded vanadium magnetic impurities. With increasing V doping, the antiferromagnetic interactions intensify, weakening the coupling between the local moments and conduction electrons, which in turn lowers the Kondo temperature ($T_{\rm K}$). Furthermore, the anomalous Hall effect is observed in V$_{{5.73}}$S$_{{8}}$, with an anomalous Hall conductivity (AHC) of 50.46 $\Omega^{{-1}}\cdot$cm$^-1$ and anomalous Hall angle of 0.73% at 2 K. Our findings offer valuable insights into the mechanisms of the Kondo effect and anomalous Hall effect in self-intercalated transition metal chalcogenides with complex magnetism and electronic correlation effects.

Key words: V$_{5+x}$S$_{8}$ crystals, antiferromagnetic, negative magnetoresistance, Kondo effect, anomalous Hall effect

中图分类号: (Magnetoresistance)

73.43.Qt

Yaofeng Xie(谢耀锋), Senhao Lv(吕森浩), Qi Qi(齐琦), Guojing Hu(胡国静), Ke Zhu(祝轲), Zhen Zhao(赵振), Guoyu Xian(冼国裕), Yechao Han(韩烨超), Ruwen Wang(王汝文), Chenyu Bai(白晨宇), Lihong Bao(鲍丽宏), Xiao Lin(林晓), Hui Guo(郭辉), Haitao Yang(杨海涛), and Hong-Jun Gao(高鸿钧). Observation of distinct Kondo effect and anomalous Hall effect in V self-intercalated layered antiferromagnet V₅S₈ crystals[J]. 中国物理B, 2025, 34(8): 87303-087303.

参考文献

[1] Deng Y, Yu Y, Song Y, Zhang J, Wang N Z, Sun Z, Yi Y, Wu Y Z, Wu S, Zhu J, Wang J, Chen X H and Zhang Y 2018 Nature 563 94
[2] Ali M N, Xiong J, Flynn S, Tao J, Gibson Q D, Schoop L M, Liang T, Haldolaarachchige N, Hirschberger M, Ong N P and Cava R J 2014 Nature 514 205
[3] la Barrera S C, SinkoMR, Gopalan D P, Sivadas N, Seyler K L,Watanabe K, Taniguchi T, Tsen A W, Xu X D, Xiao D and Hunt B M 2018 Nat. Commun. 9 1427
[4] Sun Z P, Martinez A and Wang F 2016 Nat. Photonics 10 227
[5] Ng H K, Xiang D, Suwardi A, Hu G W, Yang K, Zhao Y S, Liu T, Cao Z H, Liu H J, Li S S, Cao J, Zhu Q, Dong Z G, Tan C K I, Chi D Z, Qiu C W, Hippalgaonkar K, Eda G, Yang M and Wu J 2022 Nat. Electron. 5 489
[6] Novoselov K S, Mishchenko A, Carvalho A and Neto A H C2016 Science 353 aac9439
[7] Yi H M, Hu L H, Wang Y X, Xiao R, Cai J Q, Hickey D R, Dong C Y, Zhao Y F, Zhou L J and Zhang R X 2022 Nat. Mater. 21 1366
[8] Li Y J, Yin R T, Li M Z, Gong J S, Chen Z Y, Zhang J K, Yan Y J and Feng D L 2024 Nat. Commun. 15 10121
[9] Wang Z, Gibertini M, Dumcenco D, Taniguchi T, Watanabe K, Giannini E and Morpurgo A F 2019 Nat. Nanotechnol. 14 1116
[10] Ghazaryan D, Greenaway M T, Wang Z, Guarochico-Moreira V H, Vera-Marun I J, Yin J, Liao Y, Morozov S V, Kristanovski O, Lichtenstein A I, Katsnelson M I, Withers F, Mishchenko A, Eaves L, Geim A K, Novoselov K S and Misra A 2018 Nat. Electron. 1 344
[11] Zhang G, Guo F, Wu H, Wen X, Yang L, Jin W, Zhang W and Chang H 2022 Nat. Commun. 13 5067
[12] Lee J U, Lee S, Ryoo J H, Kang S, Kim T Y, Kim P, Park C H, Park J G and Cheong H 2016 Nano Lett. 16 7433
[13] Tian Y, Gao W, Henriksen E A, Chelikowsky J R and Yang L 2019 Nano Lett. 19 7673
[14] Cao T F, Shao D F, Huang K, Gurung G and Tsymbal E Y 2023 Nano Lett. 23 3781
[15] Huang M, Zhang Y, Lei X Y, Hu G J, Xiang J X, Zeng H L, Fu X W, Zhang Z M and Chai G Z 2021 Nano Lett. 21 4280
[16] Hu G J, Guo H, Lv S H, Li L X, Wang Y H, Han Y C, Pan L L, Xie Y L, Yu W Q, Zhu K, Qi Q, Xian, G Y, Zhu S Y, Shi J A, Bao L H, Lin X, Zhou W, Yang H T and Gao H J 2024 Adv. Mater. 36 2403154
[17] Wang Y, Sofer Z, Luxa J and Pumera M M 2016 Adv. Mater. Interfaces 3 1600433
[18] Sugawara K, Nakata Y, Fujii K, Nakayama K, Souma S, Takahashi T and Sato T 2019 Phys. Rev. B 99 241404
[19] Hardy W J, Yuan J T, Guo H, Zhou P P, Lou J and Natelson D 2016 ACS Nano 10 5941
[20] Bonilla M, Kolekar S, Ma Y, Diaz H C, Kalappattil V, Das R, Eggers T, Gutierrez H R, Manh-Huong P and Batzill M 2018 Nat. Nanotechnol. 13 289
[21] Liu H T, Xue Y Z, Sho J A, Guzman R A, Zhan P P, Zhou Z, He Y G, Bian C, Wu L M, Ma R S, Chen J C, Yan J H, Yang H T, Shen C M, Zhou W, Bao L H and Gao H J 2019 Nano Lett. 19 8572
[22] Guo Y Q, Deng H T, Sun X, Li X L, Zhao J Y,Wu J C, ChuWS, Zhang S J, Pan H B, Zheng X S, Wu X J, Jin C Q, Wu C Z and Xie Y 2017 Adv. Mater. 29 1700715
[23] Niu J J, Yan B M, Ji Q Q, Liu Z F, Li M Q, Gao P, Zhang Y F, Yu D P and Wu X S 2017 Phys. Rev. B 96 075402
[24] Zhou Z, Zhao X X, Wu L M, Liu H T, Chen J C, Xi C Y, Wang Z S, Liu E K, Zhou W, Pennycook S J, Pantelides S T, Zhang X G, Bao L H and Gao H J 2022 Phys. Rev. B 105 235433
[25] Wu X K, Wang B, Wu D T, Chen B W, Mi M J, Wang Y L and Shen B 2024 Chin. Phys. B 33 027503
[26] Kim Y S, Brahlek M, Bansal N, Edrey E, Kapilevich G A, Iida K, Tanimura M, Horibe Y, Cheong S W and Seongshik O 2011 Phys. Rev. B 2 073109
[27] Lupke F, Pham A D, Zhao Y F, Zhou L J, Lu W C, Briggs E, Bernholc J, Kolmer M, Teeter J, Kolmer M, Teeter J, Ko W, Chang C Z, Ganesh P and Li A P 2022 Phys. Rev. B 105 035423
[28] Wu X K, Wang B, Wu D T, Chen B W, Mi M J, Wang Y L and Shen B 2017 Chin. Phys. B 33 027503
[29] Niu J J and Yan B M 2017 Phys. Rev. B 96 075402
[30] Kar I, Routh S, Ghorai S, Purwar S and Thirupathaiah S 2023 Solid State Commun. 369 115209
[31] Nakanishi M, Yoshimura K, Kosuge K, Goto T, Fujii T and Takada J 2000 J. Magn. Magn. Mater. 221 301
[32] Dhara S, Chowdhury R R and Bandyopadhyay B 2016 Phys. Rev. B 93 214413
[33] Singh M, Ghosh L, Gangwar V K, Kumar Y, Pal D, Shahi P, Kumar S, Mukherjee S, Shimada K and Chatterjee S 2022 Appl. Phys. Lett. 121 032403
[34] Ghosh S, Tanguturi R G, Pramanik P, Joshi D C, Mishra P K, Das S and Thota S 2019 Phys. Rev. B 99 115135
[35] Ghosh T, Fukuda T, Kakeshita T, Kaul S N and Mukhopadhyay P K 2017 Phys. Rev. B 95 140401
[36] Wang J S, PowersW, Zhang Z, Smith M, McIntosh B J, Bac S K, Riney L, Zhukovskyi M, Orlova, T, Rokhinson L P, Hsu Y T, Liu X Y and Assaf B A 2022 Nano Lett. 22 792
[37] Roulleau P, Choi T, Riedi S, Heinzel T, Shorubalko I, Ihn T and Ensslin K 2010 Phys. Rev. B 81 155449
[38] Sasmal S, Mondal R, Kulkarni R, Thamizhavel A and Singh B 2020 J. Phys.: Condens. Matter 32 335701
[39] Laha A, Singha R, Mardanya S, Singh B, Agarwal A, Mandal P and Hossain Z 2021 Phys. Rev. B 103 l241112
[40] Brinkman A, Huijben M, Van Zalk M, Huijben J, Zeitler U, Maan J C, Van der Wiel W G, Rijnders G, Blank D H A and Hilgenkamp H 2007 Nat. Mater. 6 493
[41] Felsch W and Winzer K 1973 Solid State Commun. 13 569
[42] Zhang Y H, Kahle S, Herden T, Stroh C, Mayor M, Schlickum U, Ternes M, Wahl P and Kern K 2022 Nat. Commun. 13 5067
[43] Anderson P W 1970 J. Phys. C 3 2436
[44] Gentile P, de Leo L, Fabrizio M and Tosatti E 2009 Europhys. Lett. 87 27014
[45] Nagaosa N, Sinova J, Onoda S, MacDonald A H and Ong N P 2010 Rev. Mod. Phys. 82 1539
[46] Liu E K, Sun Y, Kumar N, Muechler L, Sun A L, Jiao L, Yang S Y, Liu D F, Liang A J, Xu Q N, Kroder J, Süss V, Borrmann H, Shekhar C, Wang Z S, Xi C Y, Wang W H, Schnelle W, Wirth S, Chen Y L, Goennenwein S T B and Felser C 2018 Nat. Phys. 14 1125
[47] Tanaka M, Fujishiro Y, Mogi M, Kaneko Y, Yokosawa T, Kanazawa N, Minami S, Koretsune T, Arita R, Tarucha S, Yamamoto M and Tokura Y 2021 Nano Lett. 20 7476

Observation of distinct Kondo effect and anomalous Hall effect in V self-intercalated layered antiferromagnet V₅S₈ crystals

Observation of distinct Kondo effect and anomalous Hall effect in V self-intercalated layered antiferromagnet V₅S₈ crystals

RichHTML

PDF (PC)

赞

补充材料

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Jing-Jing Zheng(郑晶晶), Yuxi Chen(陈禹西), Chengxiang Zhao(赵承祥), Junfeng Zhang(张均锋), Ping Zhang(张平), Bao-Tian Wang(王保田), and Jiang-Jiang Ma(马江将). Ab initio prediction of ground-state magnetic ordering and high-pressure magnetic phase transition of uranium mononitride[J]. 中国物理B, 2025, 34(8): 87101-087101.
[2]	Qi Qi(齐琦), Senhao Lv(吕森浩), Ke Zhu(祝轲), Yaofeng Xie(谢耀锋), Guojing Hu(胡国静), Zhen Zhao(赵振), Guoyu Xian(冼国裕), Yechao Han(韩烨超), Yang Yang(杨洋), Lihong Bao(鲍丽宏), Xiao Lin(林晓), Hui Guo(郭辉), Haitao Yang(杨海涛), and Hong-Jun Gao(高鸿钧). In-plane negative magnetoresistance and quantum oscillations in van der Waals antiferromagnet DyTe₃[J]. 中国物理B, 2025, 34(7): 77305-077305.
[3]	Ning Dai(戴凝) and Bin Zhou(周斌). Current density in anomalous Hall effect regime under weak scattering[J]. 中国物理B, 2025, 34(7): 77301-077301.
[4]	Sahar Ghasemi and Morad Ebrahimkhas. Role of symmetry in antiferromagnetic topological insulators[J]. 中国物理B, 2025, 34(7): 77302-077302.
[5]	Yi-Ran Li(李祎冉), Na Li(李娜), Ping Su(苏平), Hui Liang(梁慧), Kai-Yuan Hu(胡开源), Ying Zhou(周颖), Dan-Dan Wu(吴丹丹), Yan Sun(孙燕), Qiu-Ju Li(李秋菊), Xia Zhao(赵霞), Xue-Feng Sun(孙学峰), and Yi-Yan Wang(王义炎). Crystal structure, magnetic properties, and tunable Kondo effect in a new compound Nd₅ScSb₁₂[J]. 中国物理B, 2025, 34(6): 67502-067502.
[6]	Pi-Ye Zhou(周丕烨), Xiao-Hui Li(李晓慧), and Yuan Wan(万源). Orbital magnetic field effect on spin waves in a triangular lattice tetrahedral antiferromagnetic insulator[J]. 中国物理B, 2025, 34(6): 67501-067501.
[7]	Da-Liang Guo(郭达良), and Huan Li(黎欢). Interacting Dirac semi-metal state in nonsymmorphic Kondo-lattice compound CeAgSb₂[J]. 中国物理B, 2025, 34(6): 67102-067102.
[8]	Wen-Xiao Wang(王文晓), Yi-Wen Liu(刘亦文), and Lin He(何林). Quantum anomalous Hall effect in twisted bilayer graphene[J]. 中国物理B, 2025, 34(4): 47301-047301.
[9]	Zhuangzhuang Qu(曲壮壮), Zhihao Chen(陈志豪), Xiangyan Han(韩香岩), Zhiyu Wang(王知雨), Zhuoxian Li(李卓贤), Qianling Liu(刘倩伶), Wenjun Zhao(赵文俊), Kenji Watanabe, Takashi Taniguchi, Zhi-Gang Cheng(程智刚), Zizhao Gan(甘子钊), and Jianming Lu(路建明). Anomalous Hall effect in Bernal tetralayer graphene enhanced by spin-orbit interaction[J]. 中国物理B, 2025, 34(3): 37201-037201.
[10]	Zhaocong Huang(黄兆聪), Xuejian Tang(唐学健), Qian Chen(陈倩), Wei Jiang(蒋伟), Qingjie Guo(郭庆杰), Milad Jalali, Jun Du(杜军), and Ya Zhai(翟亚). In-phase and out-of-phase spin pumping effects in Py/Ru/Py synthetic antiferromagnetic structures[J]. 中国物理B, 2024, 33(9): 97202-097202.
[11]	Bo-Wen Chen(陈博文) and Bing Shen(沈冰). Evolution of anomalous Hall effect in ferromagnetic Weyl semimetal Nb_xZr_1-xCo₂Sn[J]. 中国物理B, 2024, 33(8): 87501-087501.
[12]	Xiao-Jing Dong(董晓晶) and Chang-Wen Zhang(张昌文). Intrinsic valley-polarized quantum anomalous Hall effect in a two-dimensional germanene/MnI₂ van der Waals heterostructure[J]. 中国物理B, 2024, 33(7): 77303-077303.
[13]	Jin-Jing Liang(梁瑾静), Xue-Kui Xi(郗学奎), Wen-Hong Wang(王文洪), and Yong-Chang Lau(刘永昌). Tailoring-compensated ferrimagnetic state and anomalous Hall effect in quaternary Mn-Ru-V-Ga Heusler compounds[J]. 中国物理B, 2024, 33(7): 77504-077504.
[14]	Li-Bo Zhang(张黎博), Qing-Xin Dong(董庆新), Jian-Li Bai(白建利), Qiao-Yu Liu(刘乔宇), Jing-Wen Cheng(程靖雯), Cun-Dong Li(李存东), Pin-Yu Liu(刘品宇), Ying-Rui Sun(孙英睿), Yu Huang(黄宇), Zhi-An Ren(任治安), and Gen-Fu Chen(陈根富). Magnetism, heat capacity, magnetocaloric effect, and magneto-transport properties of heavy fermion antiferromagnet CeGaSi[J]. 中国物理B, 2024, 33(6): 67101-067101.
[15]	Longfei Li(李龙飞), Shengwei Chi(迟晟玮), Wenlong Ma(马文龙), Kaizhen Guo(郭凯臻), Gang Xu(徐刚), and Shuang Jia(贾爽). Enhanced anomalous Hall effect in kagome magnet YbMn₆Sn₆ with intermediate-valence ytterbium[J]. 中国物理B, 2024, 33(5): 57501-057501.