Two-step growth of 4-inch multilayer MoS2 wafers

doi:10.1088/1674-1056/adce9f

中国物理B ›› 2025, Vol. 34 ›› Issue (6): 68103-068103.doi: 10.1088/1674-1056/adce9f

Two-step growth of 4-inch multilayer MoS₂ wafers

Yang-Kun Zhang(张养坤)^1,2, Yu-Chen Wang(王雨辰)^1,2, Wei Yang(杨威)^1,2, Dong-Xia Shi(时东霞)^1,2,3, Luo-Jun Du(杜罗军)^1,2,†, and Guang-Yu Zhang(张广宇)^1,2,3,‡

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China

收稿日期:2025-03-07 修回日期:2025-04-18 接受日期:2025-04-21 出版日期:2025-05-16 发布日期:2025-06-16
通讯作者: Luo-Jun Du, Guang-Yu Zhang E-mail:luojun.du@iphy.ac.cn;gyzhang@iphy.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2021YFA1202900), the National Natural Science Foundation of China (Grant Nos. 12422402, 61888102, 12274447, and 62204166), Chinese Academy of Sciences Strategic Priority Research Program (Grant No. XDB067020302), and Guangdong Major Project of Basic and Applied Basic Research (Grant No. 2021B0301030002).

Two-step growth of 4-inch multilayer MoS₂ wafers

Yang-Kun Zhang(张养坤)^1,2, Yu-Chen Wang(王雨辰)^1,2, Wei Yang(杨威)^1,2, Dong-Xia Shi(时东霞)^1,2,3, Luo-Jun Du(杜罗军)^1,2,†, and Guang-Yu Zhang(张广宇)^1,2,3,‡

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Songshan Lake Materials Laboratory, Dongguan 523808, China

Received:2025-03-07 Revised:2025-04-18 Accepted:2025-04-21 Online:2025-05-16 Published:2025-06-16
Contact: Luo-Jun Du, Guang-Yu Zhang E-mail:luojun.du@iphy.ac.cn;gyzhang@iphy.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2021YFA1202900), the National Natural Science Foundation of China (Grant Nos. 12422402, 61888102, 12274447, and 62204166), Chinese Academy of Sciences Strategic Priority Research Program (Grant No. XDB067020302), and Guangdong Major Project of Basic and Applied Basic Research (Grant No. 2021B0301030002).

1. 2025-068103-SI.pdf(1704KB)

摘要/Abstract

摘要： Molybdenum disulfide (MoS$_{2}$) is an emerging two-dimensional (2D) semiconductor and has great potential for high-end applications beyond the traditional silicon-based electronics. Compared to the monolayers, multilayer MoS$_{2}$ has improved electron mobility and current density, and therefore provides a more promising platform in terms of thin-film transistors, flexible electronic devices, etc. However, the synthesis of large-area, high-quality multilayer MoS$_{2}$ films with controlled layer number remains a challenge. Here, we develop a two-step oxygen-assisted chemical vapor deposition (OA-CVD) methodology for the synthesis of 4-inch MoS$_{2}$ films from monolayer to trilayer on sapphire substrates. The influence of critical growth parameters on the growth of multilayer MoS$_{2}$ is systematically explored, such as the evaporation temperature of MoO$_{3}$ and the flow rate of O$_{2}$. Flexible field-effect transistor (FET) devices fabricated from bilayer/trilayer MoS$_{2}$ show substantial improvements in mobility compared with flexible FETs based on monolayer films.

关键词: two-step growth, oxygen-assisted chemical vapor deposition, multilayer MoS$_{2}$, flexible field-effect transistor

Abstract: Molybdenum disulfide (MoS$_{2}$) is an emerging two-dimensional (2D) semiconductor and has great potential for high-end applications beyond the traditional silicon-based electronics. Compared to the monolayers, multilayer MoS$_{2}$ has improved electron mobility and current density, and therefore provides a more promising platform in terms of thin-film transistors, flexible electronic devices, etc. However, the synthesis of large-area, high-quality multilayer MoS$_{2}$ films with controlled layer number remains a challenge. Here, we develop a two-step oxygen-assisted chemical vapor deposition (OA-CVD) methodology for the synthesis of 4-inch MoS$_{2}$ films from monolayer to trilayer on sapphire substrates. The influence of critical growth parameters on the growth of multilayer MoS$_{2}$ is systematically explored, such as the evaporation temperature of MoO$_{3}$ and the flow rate of O$_{2}$. Flexible field-effect transistor (FET) devices fabricated from bilayer/trilayer MoS$_{2}$ show substantial improvements in mobility compared with flexible FETs based on monolayer films.

Key words: two-step growth, oxygen-assisted chemical vapor deposition, multilayer MoS$_{2}$, flexible field-effect transistor

中图分类号: (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

81.15.Gh

07.79.Cz (Scanning tunneling microscopes)

Yang-Kun Zhang(张养坤), Yu-Chen Wang(王雨辰), Wei Yang(杨威), Dong-Xia Shi(时东霞), Luo-Jun Du(杜罗军), and Guang-Yu Zhang(张广宇). Two-step growth of 4-inch multilayer MoS₂ wafers[J]. 中国物理B, 2025, 34(6): 68103-068103.

Yang-Kun Zhang(张养坤), Yu-Chen Wang(王雨辰), Wei Yang(杨威), Dong-Xia Shi(时东霞), Luo-Jun Du(杜罗军), and Guang-Yu Zhang(张广宇). Two-step growth of 4-inch multilayer MoS₂ wafers[J]. Chin. Phys. B, 2025, 34(6): 68103-068103.

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Two-step growth of 4-inch multilayer MoS₂ wafers

Two-step growth of 4-inch multilayer MoS₂ wafers

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