Ultrahigh concentration of NV- centers embedded in the CVD epi-diamond layer near the interface with an HPHT diamond substrate

doi:10.1088/1674-1056/adc7f5

中国物理B ›› 2025, Vol. 34 ›› Issue (5): 56102-056102.doi: 10.1088/1674-1056/adc7f5

Ultrahigh concentration of NV^- centers embedded in the CVD epi-diamond layer near the interface with an HPHT diamond substrate

Yuanjie Yang(杨元杰), Shengran Lin(林盛然), Jiaxin Zhao(赵嘉昕), Changfeng Weng(翁长风), Liren Lou(楼立人), Wei Zhu(祝巍)†, and Guanzhong Wang(王冠中)‡

Department of Physics, University of Science and Technology of China, Hefei 230026, China

收稿日期:2025-02-19 修回日期:2025-03-24 接受日期:2025-04-02 出版日期:2025-05-15 发布日期:2025-05-06
通讯作者: Wei Zhu, Guanzhong Wang E-mail:zhuw@ustc.edu.cn;gzwang@ustc.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11374280 and 50772110).

Ultrahigh concentration of NV^- centers embedded in the CVD epi-diamond layer near the interface with an HPHT diamond substrate

Yuanjie Yang(杨元杰), Shengran Lin(林盛然), Jiaxin Zhao(赵嘉昕), Changfeng Weng(翁长风), Liren Lou(楼立人), Wei Zhu(祝巍)†, and Guanzhong Wang(王冠中)‡

Department of Physics, University of Science and Technology of China, Hefei 230026, China

Received:2025-02-19 Revised:2025-03-24 Accepted:2025-04-02 Online:2025-05-15 Published:2025-05-06
Contact: Wei Zhu, Guanzhong Wang E-mail:zhuw@ustc.edu.cn;gzwang@ustc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11374280 and 50772110).

摘要/Abstract

摘要： The negatively charged nitrogen vacancy (NV$^-$) center ensemble in as-grown chemical vapor deposition (CVD) diamond is a promising candidate for quantum sensing due to its long coherence time and excellent optical properties. However, achieving a high concentration of NV$^-$ centers in as-grown CVD diamond remains a critical challenge, which constrains the performance of NV$^-$ based sensors. In this study, we observe that NV$^-$ center formation efficiency is significantly enhanced during the initial growth phase, with a coherence time $T^*_2$ of 1.1 μs. These findings demonstrate that high-concentration NV$^-$ centers can be achieved in as-grown diamonds, greatly enhancing their utility in high-performance magnetometers and quantum sensing.

关键词: interface, high concentration, nitrogen vacancy centers, chemical vapor deposition (CVD), diamond

Abstract: The negatively charged nitrogen vacancy (NV$^-$) center ensemble in as-grown chemical vapor deposition (CVD) diamond is a promising candidate for quantum sensing due to its long coherence time and excellent optical properties. However, achieving a high concentration of NV$^-$ centers in as-grown CVD diamond remains a critical challenge, which constrains the performance of NV$^-$ based sensors. In this study, we observe that NV$^-$ center formation efficiency is significantly enhanced during the initial growth phase, with a coherence time $T^*_2$ of 1.1 μs. These findings demonstrate that high-concentration NV$^-$ centers can be achieved in as-grown diamonds, greatly enhancing their utility in high-performance magnetometers and quantum sensing.

Key words: interface, high concentration, nitrogen vacancy centers, chemical vapor deposition (CVD), diamond

中图分类号: (Point defects and defect clusters)

61.72.J-

81.05.ug (Diamond) 68.35.Ct (Interface structure and roughness) 71.55.-i (Impurity and defect levels)

Yuanjie Yang(杨元杰), Shengran Lin(林盛然), Jiaxin Zhao(赵嘉昕), Changfeng Weng(翁长风), Liren Lou(楼立人), Wei Zhu(祝巍), and Guanzhong Wang(王冠中). Ultrahigh concentration of NV^- centers embedded in the CVD epi-diamond layer near the interface with an HPHT diamond substrate[J]. 中国物理B, 2025, 34(5): 56102-056102.

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Ultrahigh concentration of NV^- centers embedded in the CVD epi-diamond layer near the interface with an HPHT diamond substrate

Ultrahigh concentration of NV^- centers embedded in the CVD epi-diamond layer near the interface with an HPHT diamond substrate

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