关键词: perpendicular magnetic anisotropy (PMA), Co$_{2}$MnSi (CMS), Co, abnormal Hall resistance ($R_{\rm Hall}$), coercivity ($H_{\rm c}$)

Abstract: Pd/Co$_{2}$MnSi (CMS)/Co/Pd multilayer films were designed based on the idea of combining highly spin-polarized materials with strong perpendicular magnetic anisotropy (PMA) films. The PMA of Pd/CMS/Co/Pd multilayer films was studied by optimizing the growth conditions and thickness of each film layer. The optimal structure of the multilayer films was Pd(6 nm)/CMS(5 nm)/Co(2 nm)/Pd(1 nm). Its abnormal Hall resistance ($R_{\rm Hall}$), coercivity ($H_{\rm c}$) and effective magnetic anisotropy constant ($K_{\rm eff}$) are 0.08 $\Omega $, 284 Oe and 1.36 Merg/cm$^{3}$, respectively, which are 100%, 492%, and 183% higher than the corresponding values (0.04 $\Omega $, 48 Oe, and 0.48 Merg/cm$^{3}$) of the Pd(6 nm)/Co(1 nm)/Pd(3 nm) trilayer films. The analysis shows that the increases of the above values are the result of the Pd/CMS interface effect and CMS/Co interface ferromagnetic (FM) coupling, and that it is closely related to the thickness of each film layer in the multilayer films and the growth conditions of the multilayer films.

Key words: perpendicular magnetic anisotropy (PMA), Co$_{2}$MnSi (CMS), Co, abnormal Hall resistance ($R_{\rm Hall}$), coercivity ($H_{\rm c}$)