Thickness dependence of linearly polarized light-induced momentum anisotropy and inverse spin Hall effect in topological insulator Bi2Te3

doi:10.1088/1674-1056/adf82a

中国物理B ›› 2025, Vol. 34 ›› Issue (11): 117103-117103.doi: 10.1088/1674-1056/adf82a

Thickness dependence of linearly polarized light-induced momentum anisotropy and inverse spin Hall effect in topological insulator Bi₂Te₃

Jiayi Qiu(邱嘉毅)^1,2, Jinling Yu(俞金玲)^1,†, Zhu Diao(刁佇)², Yunfeng Lai(赖云锋)¹, Shuying Cheng(程树英)¹, Yonghai Chen(陈涌海)³, and Ke He(何珂)⁴

1 Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China;
2 Department of Electronic Engineering and Maynooth International Engineering College, Maynooth, Co. Kildare, Ireland;
3 Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
4 Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China

收稿日期:2025-06-02 修回日期:2025-07-18 接受日期:2025-08-06 发布日期:2025-11-10
通讯作者: Jinling Yu E-mail:jlyu@semi.ac.cn
基金资助:
This work was supported by the National Natural Science Foundation of China (Grant Nos. 62074036, 61674038, and 11574302), the Foreign Cooperation Project of Fujian Province, China (Grant No. 2023I0005), the Open Research Fund Program of the State Key Laboratory of Low Dimensional Quantum Physics (Grant No. KF202108), the National Key Research and Development Program of China (Grant No. 2016YFB0402303), and the Foundation of the Fujian Provincial Department of Industry and Information Technology of China (Grant No. 82318075).

Thickness dependence of linearly polarized light-induced momentum anisotropy and inverse spin Hall effect in topological insulator Bi₂Te₃

Jiayi Qiu(邱嘉毅)^1,2, Jinling Yu(俞金玲)^1,†, Zhu Diao(刁佇)², Yunfeng Lai(赖云锋)¹, Shuying Cheng(程树英)¹, Yonghai Chen(陈涌海)³, and Ke He(何珂)⁴

1 Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China;
2 Department of Electronic Engineering and Maynooth International Engineering College, Maynooth, Co. Kildare, Ireland;
3 Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
4 Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China

Received:2025-06-02 Revised:2025-07-18 Accepted:2025-08-06 Published:2025-11-10
Contact: Jinling Yu E-mail:jlyu@semi.ac.cn
About author:2025-117103-250970.pdf
Supported by:
This work was supported by the National Natural Science Foundation of China (Grant Nos. 62074036, 61674038, and 11574302), the Foreign Cooperation Project of Fujian Province, China (Grant No. 2023I0005), the Open Research Fund Program of the State Key Laboratory of Low Dimensional Quantum Physics (Grant No. KF202108), the National Key Research and Development Program of China (Grant No. 2016YFB0402303), and the Foundation of the Fujian Provincial Department of Industry and Information Technology of China (Grant No. 82318075).

摘要/Abstract

摘要： The thickness dependence of linearly polarized light-induced momentum anisotropy and the inverse spin Hall effect (PISHE) in topological insulator (TI) Bi$_{2}$Te$_{3}$ films has been investigated. A significant enhancement of the PISHE signal is observed in the 12-quintuple-layer (QL) Bi$_{2}$Te$_{3}$ film compared with that of the 3- and 5-QL samples, whereas a minimal value of photoinduced momentum anisotropy is found in the 12-QL sample. The photoinduced momentum anisotropy and the PISHE in Bi$_{2}$Te$_{3}$ films are more than three and two orders of magnitude larger than those in Bi$_{2}$Se$_{3}$ films grown on SrTiO$_{3}$ substrates, respectively. The 3-QL sample exhibits a sinusoidal dependence of the PISHE current on the light spot position, while the 5-QL and 12-QL samples show a W-shaped dependence, which arises from the different angles between the coordinate axis $x$ and the in-plane crystallographic axis of the Bi$_{2}$Te$_{3}$ films. Our findings demonstrate the critical role of film thickness in modulating both the photoinduced momentum anisotropy and the PISHE current, thereby suggesting a thickness-engineering strategy for designing novel optoelectronic devices based on TIs.

关键词: photoinduced inverse spin Hall effect, photoinduced momentum anisotropy, three-dimensional topological insulator, Bi$_{2}$Te$_{3}$, thickness dependence

Abstract: The thickness dependence of linearly polarized light-induced momentum anisotropy and the inverse spin Hall effect (PISHE) in topological insulator (TI) Bi$_{2}$Te$_{3}$ films has been investigated. A significant enhancement of the PISHE signal is observed in the 12-quintuple-layer (QL) Bi$_{2}$Te$_{3}$ film compared with that of the 3- and 5-QL samples, whereas a minimal value of photoinduced momentum anisotropy is found in the 12-QL sample. The photoinduced momentum anisotropy and the PISHE in Bi$_{2}$Te$_{3}$ films are more than three and two orders of magnitude larger than those in Bi$_{2}$Se$_{3}$ films grown on SrTiO$_{3}$ substrates, respectively. The 3-QL sample exhibits a sinusoidal dependence of the PISHE current on the light spot position, while the 5-QL and 12-QL samples show a W-shaped dependence, which arises from the different angles between the coordinate axis $x$ and the in-plane crystallographic axis of the Bi$_{2}$Te$_{3}$ films. Our findings demonstrate the critical role of film thickness in modulating both the photoinduced momentum anisotropy and the PISHE current, thereby suggesting a thickness-engineering strategy for designing novel optoelectronic devices based on TIs.

Key words: photoinduced inverse spin Hall effect, photoinduced momentum anisotropy, three-dimensional topological insulator, Bi$_{2}$Te$_{3}$, thickness dependence

中图分类号: (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)

71.70.Ej

72.25.Fe (Optical creation of spin polarized carriers) 75.70.Tj (Spin-orbit effects) 75.76.+j (Spin transport effects)

Jiayi Qiu(邱嘉毅), Jinling Yu(俞金玲), Zhu Diao(刁佇), Yunfeng Lai(赖云锋), Shuying Cheng(程树英), Yonghai Chen(陈涌海), and Ke He(何珂). Thickness dependence of linearly polarized light-induced momentum anisotropy and inverse spin Hall effect in topological insulator Bi₂Te₃[J]. 中国物理B, 2025, 34(11): 117103-117103.

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Thickness dependence of linearly polarized light-induced momentum anisotropy and inverse spin Hall effect in topological insulator Bi₂Te₃

Thickness dependence of linearly polarized light-induced momentum anisotropy and inverse spin Hall effect in topological insulator Bi₂Te₃

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