Anisotropic metal-insulator transition in strained VO2(B) single crystal

doi:10.1088/1674-1056/ad39d4

中国物理B ›› 2024, Vol. 33 ›› Issue (6): 67103-067103.doi: 10.1088/1674-1056/ad39d4

Anisotropic metal-insulator transition in strained VO₂(B) single crystal

Zecheng Ma(马泽成)^1,†, Shengnan Yan(闫胜楠)^1,†, Zenglin Liu(刘增霖)¹, Tao Xu(徐涛)², Fanqiang Chen(陈繁强)¹, Sicheng Chen(陈思成)¹, Tianjun Cao(曹天俊)¹, Litao Sun(孙立涛)², Bin Cheng(程斌)³, Shi-Jun Liang(梁世军)^1,‡, and Feng Miao(缪峰)^1,§

1 Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
2 SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China;
3 Institute of Interdisciplinary of Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing 210094, China

收稿日期:2024-02-15 修回日期:2024-03-20 接受日期:2024-04-03 出版日期:2024-06-18 发布日期:2024-06-18
通讯作者: Shi-Jun Liang, Feng Miao E-mail:sjliang@nju.edu.cn;miao@nju.edu.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant No. 2023YFF1203600), the National Natural Science Foundation of China (Grant Nos. 62122036, 62034004, 12322407, 61921005, and 12074176), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB44000000).

Anisotropic metal-insulator transition in strained VO₂(B) single crystal

1 Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
2 SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China;
3 Institute of Interdisciplinary of Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing 210094, China

Received:2024-02-15 Revised:2024-03-20 Accepted:2024-04-03 Online:2024-06-18 Published:2024-06-18
Contact: Shi-Jun Liang, Feng Miao E-mail:sjliang@nju.edu.cn;miao@nju.edu.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant No. 2023YFF1203600), the National Natural Science Foundation of China (Grant Nos. 62122036, 62034004, 12322407, 61921005, and 12074176), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB44000000).

1. 2024-067103-SI.pdf(1372KB)

摘要/Abstract

摘要： Mechanical strain can induce noteworthy structural and electronic changes in vanadium dioxide, imparting substantial scientific importance to both the exploration of phase transitions and the development of potential technological applications. Unlike the traditional rutile (R) phase, bronze-phase vanadium dioxide [VO$_{2}$(B)] exhibits an in-plane anisotropic structure. When subjected to stretching along distinct crystallographic axes, VO$_{2}$(B) may further manifest the axial dependence in lattice-electron interactions, which is beneficial for gaining insights into the anisotropy of electronic transport. Here, we report an anisotropic room-temperature metal-insulator transition in single-crystal VO$_{2}$(B) by applying in-situ uniaxial tensile strain. This material exhibits significantly different electromechanical responses along two anisotropic axes. We reveal that such an anisotropic electromechanical response mainly arises from the preferential arrangement of a strain-induced unidirectional stripe state in the conductive channel. This insulating stripe state could be attributed to the in-plane dimerization within the distorted zigzag chains of vanadium atoms, evidenced by strain-modulated Raman spectra. Our work may open up a promising avenue for exploiting the anisotropy of metal-insulator transition in vanadium dioxide for potential technological applications.

关键词: vanadium dioxide, strain, anisotropy, electrical transport

Abstract: Mechanical strain can induce noteworthy structural and electronic changes in vanadium dioxide, imparting substantial scientific importance to both the exploration of phase transitions and the development of potential technological applications. Unlike the traditional rutile (R) phase, bronze-phase vanadium dioxide [VO$_{2}$(B)] exhibits an in-plane anisotropic structure. When subjected to stretching along distinct crystallographic axes, VO$_{2}$(B) may further manifest the axial dependence in lattice-electron interactions, which is beneficial for gaining insights into the anisotropy of electronic transport. Here, we report an anisotropic room-temperature metal-insulator transition in single-crystal VO$_{2}$(B) by applying in-situ uniaxial tensile strain. This material exhibits significantly different electromechanical responses along two anisotropic axes. We reveal that such an anisotropic electromechanical response mainly arises from the preferential arrangement of a strain-induced unidirectional stripe state in the conductive channel. This insulating stripe state could be attributed to the in-plane dimerization within the distorted zigzag chains of vanadium atoms, evidenced by strain-modulated Raman spectra. Our work may open up a promising avenue for exploiting the anisotropy of metal-insulator transition in vanadium dioxide for potential technological applications.

Key words: vanadium dioxide, strain, anisotropy, electrical transport

中图分类号: (Metal-insulator transitions and other electronic transitions)

71.30.+h

72.80.Ga (Transition-metal compounds) 78.20.-e (Optical properties of bulk materials and thin films) 07.10.Pz (Instruments for strain, force, and torque)

Zecheng Ma(马泽成), Shengnan Yan(闫胜楠), Zenglin Liu(刘增霖), Tao Xu(徐涛), Fanqiang Chen(陈繁强), Sicheng Chen(陈思成), Tianjun Cao(曹天俊), Litao Sun(孙立涛), Bin Cheng(程斌), Shi-Jun Liang(梁世军), and Feng Miao(缪峰). Anisotropic metal-insulator transition in strained VO₂(B) single crystal[J]. 中国物理B, 2024, 33(6): 67103-067103.

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Anisotropic metal-insulator transition in strained VO₂(B) single crystal

Anisotropic metal-insulator transition in strained VO₂(B) single crystal

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