中国物理B ›› 2023, Vol. 32 ›› Issue (7): 77303-077303.doi: 10.1088/1674-1056/ac9fc2
Haoran Zhu(祝浩然)1, Weifeng Xie(谢伟锋)1, Xin Liu(刘欣)1, Yang Liu(刘杨)2,3, Jinli Zhang(张金利)1, and Xu Zuo(左旭)1,4,5,†
Haoran Zhu(祝浩然)1, Weifeng Xie(谢伟锋)1, Xin Liu(刘欣)1, Yang Liu(刘杨)2,3, Jinli Zhang(张金利)1, and Xu Zuo(左旭)1,4,5,†
摘要: Defects have a significant impact on the performance of semiconductor devices. Using the first-principles combined with one-dimensional static coupling theory approach, we have calculated the variation of carrier capture coefficients with temperature for the interfacial defects $P_{\rm b0}$ and $P_{\rm b1}$ in amorphous-SiO$_2$/Si(100) interface. It is found that the geometrical shapes of $P_{\rm b0}$ and $P_{\rm b1}$ defects undergo large deformations after capturing carriers to form charged defects, especially for the Si atoms containing a dangling bond. The hole capture coefficients of neutral $P_{\rm b0}$ and $P_{\rm b1}$ defects are largest than the other capture coefficients, indicating that these defects have a higher probability of forming positively charged centres. Meanwhile, the calculated results of non-radiative recombination coefficient of these defects show that both $P_{\rm b0}$ and $P_{\rm b1}$ defects are the dominant non-radiative recombination centers in the interface of a-SiO$_2$/Si(100).
中图分类号: (Charge carriers: generation, recombination, lifetime, trapping, mean free paths)