中国物理B ›› 2023, Vol. 32 ›› Issue (5): 58502-058502.doi: 10.1088/1674-1056/acb75b
One ε-Ga2O3-based solar-blind Schottky photodetector emphasizing high photocurrent gain and photocurrent-intensity linearity
Yue-Hua An(安跃华)1, Zhen-Sen Gao(高震森)2,†, Yu Guo(郭雨)1, Shao-Hui Zhang(张少辉)4, Zeng Liu(刘增)3,‡, and Wei-Hua Tang(唐为华)3,§
- 1 School of Optoelectronic Engineering, Guangdong Polytechnic Normal University, Guangzhou 510665, China;
2 School of Information Engineering, Guangdong University of Technology, Guangzhou 510006, China;
3 Innovation Center for Gallium Oxide Semiconductor(IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
4 Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
One ε-Ga2O3-based solar-blind Schottky photodetector emphasizing high photocurrent gain and photocurrent-intensity linearity
Yue-Hua An(安跃华)1, Zhen-Sen Gao(高震森)2,†, Yu Guo(郭雨)1, Shao-Hui Zhang(张少辉)4, Zeng Liu(刘增)3,‡, and Wei-Hua Tang(唐为华)3,§
- 1 School of Optoelectronic Engineering, Guangdong Polytechnic Normal University, Guangzhou 510665, China;
2 School of Information Engineering, Guangdong University of Technology, Guangzhou 510006, China;
3 Innovation Center for Gallium Oxide Semiconductor(IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
4 Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
摘要： The $\varepsilon $-Ga$_{2}$O$_{3}$ thin film was grown on sapphire substrate by using metalorganic chemical vapor deposition (MOCVD) method, and then was used to fabricate a deep-ultraviolet (DUV) photodetector (PD). The $\varepsilon $-Ga$_{2}$O$_{3}$ thin film shown good crystal quality and decent surface morphology. Irradiated by a 254-nm DUV light, the photodetector displayed good optoelectronic performance and high wavelength selectivity, such as photoresponsivity ($R$) of 175.69 A/W, detectivity ($D^{\ast }$) of $2.46\times 10^{15}$ Jones, external quantum efficiency (EQE) of $8.6\times 10^{4}{\%}$ and good photocurrent-intensity linearity, suggesting decent DUV photosensing performance. At 5 V and under illumination with light intensity of 800 μW/cm$^{2}$, the photocurrent gain is as high as 859 owing to the recycling gain mechanism and delayed carrier recombination; and the photocurrent gain decreases as the incident light intensity increases because of the recombination of photogenerated carriers by the large photon flux.
中图分类号: (Photodetectors (including infrared and CCD detectors))
- 85.60.Gz