Exploration of growth conditions of TaAs Weyl semimetal thin film using pulsed laser deposition

doi:10.1088/1674-1056/acb913

中国物理B ›› 2023, Vol. 32 ›› Issue (4): 47103-047103.doi: 10.1088/1674-1056/acb913

Exploration of growth conditions of TaAs Weyl semimetal thin film using pulsed laser deposition

Shien Li(李世恩)^1,2, Zefeng Lin(林泽丰)^2,3, Wei Hu(胡卫)², Dayu Yan(闫大禹)², Fucong Chen(陈赋聪)^2,3, Xinbo Bai(柏欣博)^2,3, Beiyi Zhu(朱北沂)², Jie Yuan(袁洁)^2,4, Youguo Shi(石友国)^2,3,4, Kui Jin(金魁)^2,3,4, Hongming Weng(翁红明)^2,3,4, and Haizhong Guo(郭海中)^1,†

1 Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China;
2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China

收稿日期:2022-12-09 修回日期:2023-01-20 接受日期:2023-02-06 出版日期:2023-03-10 发布日期:2023-04-04
通讯作者: Haizhong Guo E-mail:hguo@zzu.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2021YFA0718700), the National Natural Science Foundation of China (Grant No. 12174347), the Synergetic Extreme Condition User Facility (SECUF), and the Center for Materials Genome.

Exploration of growth conditions of TaAs Weyl semimetal thin film using pulsed laser deposition

1 Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China;
2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China

Received:2022-12-09 Revised:2023-01-20 Accepted:2023-02-06 Online:2023-03-10 Published:2023-04-04
Contact: Haizhong Guo E-mail:hguo@zzu.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2021YFA0718700), the National Natural Science Foundation of China (Grant No. 12174347), the Synergetic Extreme Condition User Facility (SECUF), and the Center for Materials Genome.

摘要/Abstract

摘要： TaAs, the first experimentally discovered Weyl semimetal material, has attracted a lot of attention due to its high carrier mobility, high anisotropy, nonmagnetic properties and strong interaction with light. These make it an ideal candidate for the study of Weyl fermions and applications in quantum computation, thermoelectric devices, and photodetection. For further basic physics studies and potential applications, large-size and high-quality TaAs films are urgently needed. However, it is difficult to grow As-stoichiometry TaAs films due to the volatilization of As during the growth. To solve this problem, we attempted to grow TaAs films on different substrates using targets with different As stoichiometric ratios via pulsed laser deposition (PLD). In this work, we found that partial As ions of the GaAs substrate are likely to diffuse into the TaAs films during growth, which was preliminarily confirmed by structural characterization, surface topography and composition analysis. As a result, the As content in the TaAs film was improved and the TaAs phase was achieved. Our work presents an effective method for the fabrication of TaAs films using PLD, enabling possible use of the Weyl semimetal film for functional devices.

关键词: Weyl semimetal, TaAs film, pulsed laser deposition

Abstract: TaAs, the first experimentally discovered Weyl semimetal material, has attracted a lot of attention due to its high carrier mobility, high anisotropy, nonmagnetic properties and strong interaction with light. These make it an ideal candidate for the study of Weyl fermions and applications in quantum computation, thermoelectric devices, and photodetection. For further basic physics studies and potential applications, large-size and high-quality TaAs films are urgently needed. However, it is difficult to grow As-stoichiometry TaAs films due to the volatilization of As during the growth. To solve this problem, we attempted to grow TaAs films on different substrates using targets with different As stoichiometric ratios via pulsed laser deposition (PLD). In this work, we found that partial As ions of the GaAs substrate are likely to diffuse into the TaAs films during growth, which was preliminarily confirmed by structural characterization, surface topography and composition analysis. As a result, the As content in the TaAs film was improved and the TaAs phase was achieved. Our work presents an effective method for the fabrication of TaAs films using PLD, enabling possible use of the Weyl semimetal film for functional devices.

Key words: Weyl semimetal, TaAs film, pulsed laser deposition

中图分类号: (Metals, semimetals, and alloys)

71.55.Ak

68.55.-a (Thin film structure and morphology) 81.15.Fg (Pulsed laser ablation deposition)

Shien Li(李世恩), Zefeng Lin(林泽丰), Wei Hu(胡卫), Dayu Yan(闫大禹), Fucong Chen(陈赋聪), Xinbo Bai(柏欣博), Beiyi Zhu(朱北沂), Jie Yuan(袁洁), Youguo Shi(石友国), Kui Jin(金魁), Hongming Weng(翁红明), and Haizhong Guo(郭海中). Exploration of growth conditions of TaAs Weyl semimetal thin film using pulsed laser deposition[J]. 中国物理B, 2023, 32(4): 47103-047103.

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Exploration of growth conditions of TaAs Weyl semimetal thin film using pulsed laser deposition

Exploration of growth conditions of TaAs Weyl semimetal thin film using pulsed laser deposition

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