Two-dimensional transition metal halide PdX2(X= F, Cl, Br, I): A promising candidate of bipolar magnetic semiconductors

doi:10.1088/1674-1056/ad04c3

中国物理B ›› 2023, Vol. 32 ›› Issue (12): 127103-127103.doi: 10.1088/1674-1056/ad04c3

Two-dimensional transition metal halide PdX₂(X= F, Cl, Br, I): A promising candidate of bipolar magnetic semiconductors

Miao-Miao Chen(陈苗苗), Sheng-Shi Li(李胜世), Wei-Xiao Ji(纪维霄), and Chang-Wen Zhang(张昌文)^†

School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan 250022, China

收稿日期:2023-07-14 修回日期:2023-10-06 接受日期:2023-10-19 出版日期:2023-11-14 发布日期:2023-11-22
通讯作者: Chang-Wen Zhang E-mail:ss_zhangchw@ujn.edu.cn
基金资助:
Project supported by the Taishan Scholar Program of Shandong Province, China (Grant No.ts20190939), the Independent Cultivation Program of Innovation Team of Jinan City (Grant No.2021GXRC043), the National Natural Science Foundation of China (Grant No.52173283), and the Natural Science Foundation of Shandong Province (Grant No.ZR2020QA052).

Two-dimensional transition metal halide PdX₂(X= F, Cl, Br, I): A promising candidate of bipolar magnetic semiconductors

Miao-Miao Chen(陈苗苗), Sheng-Shi Li(李胜世), Wei-Xiao Ji(纪维霄), and Chang-Wen Zhang(张昌文)^†

School of Physics and Technology, Institute of Spintronics, University of Jinan, Jinan 250022, China

Received:2023-07-14 Revised:2023-10-06 Accepted:2023-10-19 Online:2023-11-14 Published:2023-11-22
Contact: Chang-Wen Zhang E-mail:ss_zhangchw@ujn.edu.cn
Supported by:
Project supported by the Taishan Scholar Program of Shandong Province, China (Grant No.ts20190939), the Independent Cultivation Program of Innovation Team of Jinan City (Grant No.2021GXRC043), the National Natural Science Foundation of China (Grant No.52173283), and the Natural Science Foundation of Shandong Province (Grant No.ZR2020QA052).

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摘要/Abstract

摘要： Two-dimensional (2D) nanomaterials with bipolar magnetism show great promise in spintronic applications. Manipulating carriers' spin-polarized orientation in bipolar magnetic semiconductor (BMS) requires a gate voltage, but that is volatile. Recently, a new method has been proposed to solve the problem of volatility by introducing a ferroelectric gate with proper band alignment. In this paper, we predict that the PdX₂ (X = {F}, Cl, Br, I) monolayers are 2D ferromagnetic BMS with dynamic stability, thermal stability, and mechanical stability by first-principles calculations. The critical temperatures are higher than the boiling point of liquid nitrogen and the BMS characteristics are robust against external strains and electric fields for PdCl₂ and PdBr₂. Then, we manipulate the spin-polarization of PdCl₂ and PdBr₂ by introducing a ferroelectric gate to enable magnetic half-metal/semiconductor switching and spin-up/down polarization switching control. Two kinds of spin devices (multiferroic memory and spin filter) have been proposed to realize the spin-polarized directions of electrons. These results demonstrate that PdCl₂ and PdBr₂ with BMS characters can be widely used as a general material structure for spintronic devices.

关键词: PdX₂ (X = F,Cl,Br,I), bipolar magnetic semiconductors, first-principles calculations

Abstract: Two-dimensional (2D) nanomaterials with bipolar magnetism show great promise in spintronic applications. Manipulating carriers' spin-polarized orientation in bipolar magnetic semiconductor (BMS) requires a gate voltage, but that is volatile. Recently, a new method has been proposed to solve the problem of volatility by introducing a ferroelectric gate with proper band alignment. In this paper, we predict that the PdX₂ (X = {F}, Cl, Br, I) monolayers are 2D ferromagnetic BMS with dynamic stability, thermal stability, and mechanical stability by first-principles calculations. The critical temperatures are higher than the boiling point of liquid nitrogen and the BMS characteristics are robust against external strains and electric fields for PdCl₂ and PdBr₂. Then, we manipulate the spin-polarization of PdCl₂ and PdBr₂ by introducing a ferroelectric gate to enable magnetic half-metal/semiconductor switching and spin-up/down polarization switching control. Two kinds of spin devices (multiferroic memory and spin filter) have been proposed to realize the spin-polarized directions of electrons. These results demonstrate that PdCl₂ and PdBr₂ with BMS characters can be widely used as a general material structure for spintronic devices.

Key words: PdX₂ (X = F,Cl,Br,I), bipolar magnetic semiconductors, first-principles calculations

中图分类号: (Bipolarons)

71.38.Mx

75.50.Pp (Magnetic semiconductors) 73.20.At (Surface states, band structure, electron density of states)

Miao-Miao Chen(陈苗苗), Sheng-Shi Li(李胜世), Wei-Xiao Ji(纪维霄), and Chang-Wen Zhang(张昌文). Two-dimensional transition metal halide PdX₂(X= F, Cl, Br, I): A promising candidate of bipolar magnetic semiconductors[J]. 中国物理B, 2023, 32(12): 127103-127103.

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Two-dimensional transition metal halide PdX₂(X= F, Cl, Br, I): A promising candidate of bipolar magnetic semiconductors

Two-dimensional transition metal halide PdX₂(X= F, Cl, Br, I): A promising candidate of bipolar magnetic semiconductors

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