A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga2O3 photoconductor with high photo response

doi:10.1088/1674-1056/ac597d

中国物理B ›› 2022, Vol. 31 ›› Issue (8): 88503-088503.doi: 10.1088/1674-1056/ac597d

A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga₂O₃ photoconductor with high photo response

Zeng Liu(刘增)^1,2,†, Yu-Song Zhi(支钰崧)³, Mao-Lin Zhang(张茂林)^1,2, Li-Li Yang(杨莉莉)^1,2, Shan Li(李山)⁴, Zu-Yong Yan(晏祖勇)⁴, Shao-Hui Zhang(张少辉)⁵, Dao-You Guo(郭道友)⁶, Pei-Gang Li(李培刚)⁴, Yu-Feng Guo(郭宇锋)^1,2, and Wei-Hua Tang(唐为华)^1,2,‡

1 College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
2 National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
3 China Academy of Launch Vehicle Technology, Beijing 100076, China;
4 School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
5 Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China;
6 Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China

收稿日期:2021-10-28 修回日期:2022-02-28 接受日期:2022-03-02 出版日期:2022-07-18 发布日期:2022-07-23
通讯作者: Zeng Liu, Wei-Hua Tang E-mail:zengliu@njupt.edu.cn;whtang@njupt.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61774019) and Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (Grant Nos. XK1060921115 and XK1060921002).

A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga₂O₃ photoconductor with high photo response

1 College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
2 National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
3 China Academy of Launch Vehicle Technology, Beijing 100076, China;
4 School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China;
5 Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China;
6 Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China

Received:2021-10-28 Revised:2022-02-28 Accepted:2022-03-02 Online:2022-07-18 Published:2022-07-23
Contact: Zeng Liu, Wei-Hua Tang E-mail:zengliu@njupt.edu.cn;whtang@njupt.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61774019) and Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (Grant Nos. XK1060921115 and XK1060921002).

摘要/Abstract

摘要： A 4$\times $4 beta-phase gallium oxide ($\beta $-Ga$_{2}$O$_{3}$) deep-ultraviolet (DUV) rectangular 10-fingers interdigital metal-semiconductor-metal (MSM) photodetector array of high photo responsivity is introduced. The Ga$_{2}$O$_{3}$ thin film is prepared through the metalorganic chemical vapor deposition technique, then used to construct the photodetector array via photolithography, lift-off, and ion beam sputtering methods. The one photodetector cell shows dark current of 1.94 pA, photo-to-dark current ratio of 6$\times $10$^{7}$, photo responsivity of 634.15 A$\cdot$W$^{-1}$, specific detectivity of 5.93$\times $10$^{11}$ cm$\cdot$Hz$^{1/2}\cdot$W$^{-1}$ (Jones), external quantum efficiency of 310000%, and linear dynamic region of 108.94 dB, indicating high performances for DUV photo detection. Furthermore, the 16-cell photodetector array displays uniform performances with decent deviation of 19.6% for photo responsivity.

关键词: Ga₂O₃, array photodetector, MOCVD, deep UV detection

Abstract: A 4$\times $4 beta-phase gallium oxide ($\beta $-Ga$_{2}$O$_{3}$) deep-ultraviolet (DUV) rectangular 10-fingers interdigital metal-semiconductor-metal (MSM) photodetector array of high photo responsivity is introduced. The Ga$_{2}$O$_{3}$ thin film is prepared through the metalorganic chemical vapor deposition technique, then used to construct the photodetector array via photolithography, lift-off, and ion beam sputtering methods. The one photodetector cell shows dark current of 1.94 pA, photo-to-dark current ratio of 6$\times $10$^{7}$, photo responsivity of 634.15 A$\cdot$W$^{-1}$, specific detectivity of 5.93$\times $10$^{11}$ cm$\cdot$Hz$^{1/2}\cdot$W$^{-1}$ (Jones), external quantum efficiency of 310000%, and linear dynamic region of 108.94 dB, indicating high performances for DUV photo detection. Furthermore, the 16-cell photodetector array displays uniform performances with decent deviation of 19.6% for photo responsivity.

Key words: Ga₂O₃, array photodetector, MOCVD, deep UV detection

中图分类号: (Photodetectors (including infrared and CCD detectors))

85.60.Gz

29.40.Wk (Solid-state detectors) 95.55.Aq (Charge-coupled devices, image detectors, and IR detector arrays)

Zeng Liu(刘增), Yu-Song Zhi(支钰崧), Mao-Lin Zhang(张茂林), Li-Li Yang(杨莉莉), Shan Li(李山), Zu-Yong Yan(晏祖勇), Shao-Hui Zhang(张少辉), Dao-You Guo(郭道友), Pei-Gang Li(李培刚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga₂O₃ photoconductor with high photo response[J]. 中国物理B, 2022, 31(8): 88503-088503.

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A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga₂O₃ photoconductor with high photo response

A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga₂O₃ photoconductor with high photo response

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