中国物理B ›› 2022, Vol. 31 ›› Issue (11): 118501-118501.doi: 10.1088/1674-1056/ac7e36

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Designing current-strain-assisted superconductor-ferromagnet multi-bit memories

Hasnain Mehdi Jafri1,2, Jing Wang(王静)1,2, Xiao-Ming Shi(施小明)1,2, De-Shan Liang(梁德山)1,2, and Hou-Bing Huang(黄厚兵)1,2,†   

  1. 1 School of Materials Science&Engineering, Beijing Institute of Technology, Beijing 100081, China;
    2 Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
  • 收稿日期:2022-03-14 修回日期:2022-06-30 接受日期:2022-07-05 出版日期:2022-10-17 发布日期:2022-11-03
  • 通讯作者: Hou-Bing Huang E-mail:hbhuang@bit.edu.cn
  • 基金资助:
    Project sponsored by the National Natural Science Foundation of China (Grant Nos. 52150410420 and 51972028) and the National Key Research and Development Program of China (Grant No. 2019YFA0307900).

Designing current-strain-assisted superconductor-ferromagnet multi-bit memories

Hasnain Mehdi Jafri1,2, Jing Wang(王静)1,2, Xiao-Ming Shi(施小明)1,2, De-Shan Liang(梁德山)1,2, and Hou-Bing Huang(黄厚兵)1,2,†   

  1. 1 School of Materials Science&Engineering, Beijing Institute of Technology, Beijing 100081, China;
    2 Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
  • Received:2022-03-14 Revised:2022-06-30 Accepted:2022-07-05 Online:2022-10-17 Published:2022-11-03
  • Contact: Hou-Bing Huang E-mail:hbhuang@bit.edu.cn
  • Supported by:
    Project sponsored by the National Natural Science Foundation of China (Grant Nos. 52150410420 and 51972028) and the National Key Research and Development Program of China (Grant No. 2019YFA0307900).

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摘要： Current superconducting memory devices lack the basic quality of high memory density for practical memories, mainly due to the size limitations of superconducting quantum interference devices. Here, we propose a superconductor-ferromagnet bilayer device with strain-pulse-assisted multi-bit ladder-type memory, by using strain-engineered ferromagnet domain structure to control carrier concentration in the superconductor, which is simulated by coupled Landau-Lifshitz-Gilbert and Ginzburg-Landau equations. Current- and strain-pulses are observed to deterministically control the resistivity of superconductor for one and two-bit device arrangements. The average carrier concentration of superconductor is observed to have multiple metastable states that can be controllably switched using current-pulse and strain-pulse to determine multiple resistivity states. These findings confirm the eligibility of superconductor-ferromagnet bilayers to be used as ladder-type multibit memories and open a new way for further theoretical and experimental investigations of the cryogenic memories.

关键词: superconductor-ferromagnet bilayer, cryogenic memories, superconducting memories, vortex memories

Abstract: Current superconducting memory devices lack the basic quality of high memory density for practical memories, mainly due to the size limitations of superconducting quantum interference devices. Here, we propose a superconductor-ferromagnet bilayer device with strain-pulse-assisted multi-bit ladder-type memory, by using strain-engineered ferromagnet domain structure to control carrier concentration in the superconductor, which is simulated by coupled Landau-Lifshitz-Gilbert and Ginzburg-Landau equations. Current- and strain-pulses are observed to deterministically control the resistivity of superconductor for one and two-bit device arrangements. The average carrier concentration of superconductor is observed to have multiple metastable states that can be controllably switched using current-pulse and strain-pulse to determine multiple resistivity states. These findings confirm the eligibility of superconductor-ferromagnet bilayers to be used as ladder-type multibit memories and open a new way for further theoretical and experimental investigations of the cryogenic memories.

Key words: superconductor-ferromagnet bilayer, cryogenic memories, superconducting memories, vortex memories

中图分类号:  (Phenomenological theories (two-fluid, Ginzburg-Landau, etc.))

  • 74.20.De
74.25.Uv (Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)) 74.78.-w (Superconducting films and low-dimensional structures) 74.78.Fk (Multilayers, superlattices, heterostructures)