中国物理B ›› 2021, Vol. 30 ›› Issue (8): 87303-087303.doi: 10.1088/1674-1056/ac0131

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Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector

Hongyu Ma(马宏宇)1,2, Kewei Liu(刘可为)1,2,†, Zhen Cheng(程祯)1, Zhiyao Zheng(郑智遥)1,2, Yinzhe Liu(刘寅哲)1,2, Peixuan Zhang(张培宣)1,2, Xing Chen(陈星)1, Deming Liu(刘德明)1, Lei Liu(刘雷)1,2, and Dezhen Shen(申德振)1,2,‡   

  1. 1 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences(CAS), Changchun 130033, China;
    2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2021-05-06 修回日期:2021-05-11 接受日期:2021-05-14 出版日期:2021-07-16 发布日期:2021-08-02
  • 通讯作者: Kewei Liu, Dezhen Shen E-mail:liukw@ciomp.ac.cn;shendz@ciomp.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62074148, 61875194, 11727902, 12074372, 11774341, 11974344, 61975204, and 11804335), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2020225), the Open Project of the State Key Laboratory of Luminescence and Applications (Grant Nos. SKLA-2020-02 and SKLA-2020-06).

Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector

Hongyu Ma(马宏宇)1,2, Kewei Liu(刘可为)1,2,†, Zhen Cheng(程祯)1, Zhiyao Zheng(郑智遥)1,2, Yinzhe Liu(刘寅哲)1,2, Peixuan Zhang(张培宣)1,2, Xing Chen(陈星)1, Deming Liu(刘德明)1, Lei Liu(刘雷)1,2, and Dezhen Shen(申德振)1,2,‡   

  1. 1 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences(CAS), Changchun 130033, China;
    2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2021-05-06 Revised:2021-05-11 Accepted:2021-05-14 Online:2021-07-16 Published:2021-08-02
  • Contact: Kewei Liu, Dezhen Shen E-mail:liukw@ciomp.ac.cn;shendz@ciomp.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 62074148, 61875194, 11727902, 12074372, 11774341, 11974344, 61975204, and 11804335), the Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2020225), the Open Project of the State Key Laboratory of Luminescence and Applications (Grant Nos. SKLA-2020-02 and SKLA-2020-06).

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摘要： The slower response speed is the main problem in the application of ZnO quantum dots (QDs) photodetector, which has been commonly attributed to the presence of excess oxygen vacancy defects and oxygen adsorption/desorption processes. However, the detailed mechanism is still not very clear. Herein, the properties of ZnO QDs and their photodetectors with different amounts of oxygen vacancy (VO) defects controlled by hydrogen peroxide (H2O2) solution treatment have been investigated. After H2O2 solution treatment, VO concentration of ZnO QDs decreased. The H2O2 solution-treated device has a higher photocurrent and a lower dark current. Meanwhile, with the increase in VO concentration of ZnO QDs, the response speed of the device has been improved due to the increase of oxygen adsorption/desorption rate. More interestingly, the response speed of the device became less sensitive to temperature and oxygen concentration with the increase of VO defects. The findings in this work clarify that the surface VO defects of ZnO QDs could enhance the photoresponse speed, which is helpful for sensor designing.

关键词: ZnO, quantum dots, ultraviolet photodetector, oxygen vacancy

Abstract: The slower response speed is the main problem in the application of ZnO quantum dots (QDs) photodetector, which has been commonly attributed to the presence of excess oxygen vacancy defects and oxygen adsorption/desorption processes. However, the detailed mechanism is still not very clear. Herein, the properties of ZnO QDs and their photodetectors with different amounts of oxygen vacancy (VO) defects controlled by hydrogen peroxide (H2O2) solution treatment have been investigated. After H2O2 solution treatment, VO concentration of ZnO QDs decreased. The H2O2 solution-treated device has a higher photocurrent and a lower dark current. Meanwhile, with the increase in VO concentration of ZnO QDs, the response speed of the device has been improved due to the increase of oxygen adsorption/desorption rate. More interestingly, the response speed of the device became less sensitive to temperature and oxygen concentration with the increase of VO defects. The findings in this work clarify that the surface VO defects of ZnO QDs could enhance the photoresponse speed, which is helpful for sensor designing.

Key words: ZnO, quantum dots, ultraviolet photodetector, oxygen vacancy

中图分类号:  (II-VI semiconductors)

  • 73.61.Ga
85.60.Gz (Photodetectors (including infrared and CCD detectors)) 85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.))