Abstract: Pulse inductively coupled plasma has been widely used in the microelectronics industry, but the existence of overshoot phenomenon may affect the uniformity of plasma and generate high-energy ions, which could damage the chip. The overshoot phenomenon at various spatial locations in pulsed inductively coupled Ar and Ar/CF₄ discharges is studied in this work. The electron density, effective electron temperature, relative light intensity, and electron energy probability function (EEPF) are measured by using a time-resolved Langmuir probe and an optical probe, as a function of axial and radial locations. At the initial stage of pulse, both electron density and relative light intensity exhibit overshoot phenomenon, i.e., they first increase to a peak value and then decrease to a convergent value. The overshoot phenomenon gradually decays, when the probe moves away from the coils. Meanwhile, a delay appears in the variation of the electron densities, and the effective electron temperature decreases, which may be related to the reduced strength of electric field at a distance, and the consequent fewer high-energy electrons, inducing limited ionization and excitation rate. The overshoot phenomenon gradually disappears and the electron density decreases, when the probe moves away from reactor centre. In Ar/CF₄ discharge, the overshoot phenomenon of electron density is weaker than that in the Ar discharge, and the plasma reaches a steady density within a much shorter time, which is probably due to the more ionization channels and lower ionization thresholds in the Ar/CF₄ plasma.

Key words: pulse inductively coupled plasma, overshoot, spatial distribution