中国物理B ›› 2021, Vol. 30 ›› Issue (11): 117701-117701.doi: 10.1088/1674-1056/ac078e

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Oxygen vacancy control of electrical, optical, and magnetic properties of Fe0.05Ti0.95O2 epitaxial films

Qing-Tao Xia(夏清涛), Zhao-Hui Li(李召辉), Le-Qing Zhang(张乐清), Feng-Ling Zhang(张凤玲), Xiang-Kun Li(李祥琨), Heng-Jun Liu(刘恒均), Fang-Chao Gu(顾方超), Tao Zhang(张涛), Qiang Li(李强), and Qing-Hao Li(李庆浩)§   

  1. College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, Qingdao University, Qingdao 266071, China
  • 收稿日期:2021-02-20 修回日期:2021-03-24 接受日期:2021-06-03 出版日期:2021-10-13 发布日期:2021-11-06
  • 通讯作者: Qiang Li, Qing-Hao Li E-mail:liqiang@qdu.edu.cn;qhli@qdu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11504192) and the Natural Science Foundation of Shandong Province, China (Grant Nos. ZR201910230017 and BSB2014010).

Oxygen vacancy control of electrical, optical, and magnetic properties of Fe0.05Ti0.95O2 epitaxial films

Qing-Tao Xia(夏清涛), Zhao-Hui Li(李召辉), Le-Qing Zhang(张乐清), Feng-Ling Zhang(张凤玲), Xiang-Kun Li(李祥琨), Heng-Jun Liu(刘恒均), Fang-Chao Gu(顾方超), Tao Zhang(张涛), Qiang Li(李强), and Qing-Hao Li(李庆浩)§   

  1. College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, Qingdao University, Qingdao 266071, China
  • Received:2021-02-20 Revised:2021-03-24 Accepted:2021-06-03 Online:2021-10-13 Published:2021-11-06
  • Contact: Qiang Li, Qing-Hao Li E-mail:liqiang@qdu.edu.cn;qhli@qdu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11504192) and the Natural Science Foundation of Shandong Province, China (Grant Nos. ZR201910230017 and BSB2014010).

摘要: High-quality Fe-doped TiO2 films are epitaxially grown on MgF2 substrates by pulsed laser deposition. The x-ray diffraction and Raman spectra prove that they are of pure rutile phase. High-resolution transmission electron microscopy (TEM) further demonstrates that the epitaxial relationship between rutile-phased TiO2 and MgF2 substrates is 110 TiO22. The room temperature ferromagnetism is detected by alternative gradient magnetometer. By increasing the ambient oxygen pressure, magnetization shows that it decreases monotonically while absorption edge shows a red shift. The transport property measurement demonstrates a strong correlation between magnetization and carrier concentration. The influence of ambient oxygen pressure on magnetization can be well explained by a modified bound magnetization polarization model.

关键词: ferromagnetic materials, semiconductors, epitaxial films, rutile TiO2

Abstract: High-quality Fe-doped TiO2 films are epitaxially grown on MgF2 substrates by pulsed laser deposition. The x-ray diffraction and Raman spectra prove that they are of pure rutile phase. High-resolution transmission electron microscopy (TEM) further demonstrates that the epitaxial relationship between rutile-phased TiO2 and MgF2 substrates is 110 TiO22. The room temperature ferromagnetism is detected by alternative gradient magnetometer. By increasing the ambient oxygen pressure, magnetization shows that it decreases monotonically while absorption edge shows a red shift. The transport property measurement demonstrates a strong correlation between magnetization and carrier concentration. The influence of ambient oxygen pressure on magnetization can be well explained by a modified bound magnetization polarization model.

Key words: ferromagnetic materials, semiconductors, epitaxial films, rutile TiO2

中图分类号:  (Domain structure; hysteresis)

  • 77.80.Dj
78.40.Fy (Semiconductors) 77.55.Px (Epitaxial and superlattice films)