中国物理B ›› 2021, Vol. 30 ›› Issue (11): 114211-114211.doi: 10.1088/1674-1056/ac11e7

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Band offsets and electronic properties of the Ga2O3/FTO heterojunction via transfer of free-standing Ga2O3 onto FTO/glass

Xia Wang(王霞)1,†, Wei-Fang Gu(古卫芳)1, Yong-Feng Qiao(乔永凤)1, Zhi-Yong Feng(冯志永)1, Yue-Hua An(安跃华)2, Shao-Hui Zhang(张少辉)3, and Zeng Liu(刘增)4,5   

  1. 1 Department of Electrical Engineering and Automation, Shanxi Institute of Technology, Yangquan 045000, China;
    2 School of Optoelectronic Engineering, Guangdong Polytechnic Normal University, Guangzhou 510665, China;
    3 Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of;
    2 D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;
    4 College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
    5 National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
  • 收稿日期:2021-06-01 修回日期:2021-06-30 接受日期:2021-07-07 出版日期:2021-10-13 发布日期:2021-10-22
  • 通讯作者: Xia Wang E-mail:tianmingduwu@bupt.cn
  • 基金资助:
    Project supported by the Fund of Shanxi Institute of Technology (Grant No. 2021QD-15), 2020 Excellent Doctoral Award Fund for working in Shanxi Province (Shanxi Institute of Technology), China (Grant No. 2021PT-09), and the National Natural Science Foundation of China (Grant No. 62004047).

Band offsets and electronic properties of the Ga2O3/FTO heterojunction via transfer of free-standing Ga2O3 onto FTO/glass

Xia Wang(王霞)1,†, Wei-Fang Gu(古卫芳)1, Yong-Feng Qiao(乔永凤)1, Zhi-Yong Feng(冯志永)1, Yue-Hua An(安跃华)2, Shao-Hui Zhang(张少辉)3, and Zeng Liu(刘增)4,5   

  1. 1 Department of Electrical Engineering and Automation, Shanxi Institute of Technology, Yangquan 045000, China;
    2 School of Optoelectronic Engineering, Guangdong Polytechnic Normal University, Guangzhou 510665, China;
    3 Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, International Collaborative Laboratory of;
    2 D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;
    4 College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
    5 National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
  • Received:2021-06-01 Revised:2021-06-30 Accepted:2021-07-07 Online:2021-10-13 Published:2021-10-22
  • Contact: Xia Wang E-mail:tianmingduwu@bupt.cn
  • Supported by:
    Project supported by the Fund of Shanxi Institute of Technology (Grant No. 2021QD-15), 2020 Excellent Doctoral Award Fund for working in Shanxi Province (Shanxi Institute of Technology), China (Grant No. 2021PT-09), and the National Natural Science Foundation of China (Grant No. 62004047).

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摘要： The determination of band offsets is crucial in the optimization of Ga2O3-based devices, since the band alignment types could determine the operations of devices due to the restriction of carrier transport across the heterogeneous interfaces. In this work, the band offsets of the Ga2O3/FTO heterojunction are studied using x-ray photoelectron spectroscopy (XPS) based on Kraut's method, which suggests a staggered type-Ⅱ alignment with a conduction band offset (ΔEC) of 1.66 eV and a valence band offset (ΔEV) of -2.41 eV. Furthermore, the electronic properties of the Ga2O3/FTO heterostructure are also measured, both in the dark and under ultraviolet (UV) illuminated conditions (254 nm UV light). Overall, this work can provide meaningful guidance for the design and construction of oxide hetero-structured devices based on wide-bandgap semiconducting Ga2O3.

关键词: Ga2O3/FTO heterojunction, band alignment, magnetron sputtering, free-standing

Abstract: The determination of band offsets is crucial in the optimization of Ga2O3-based devices, since the band alignment types could determine the operations of devices due to the restriction of carrier transport across the heterogeneous interfaces. In this work, the band offsets of the Ga2O3/FTO heterojunction are studied using x-ray photoelectron spectroscopy (XPS) based on Kraut's method, which suggests a staggered type-Ⅱ alignment with a conduction band offset (ΔEC) of 1.66 eV and a valence band offset (ΔEV) of -2.41 eV. Furthermore, the electronic properties of the Ga2O3/FTO heterostructure are also measured, both in the dark and under ultraviolet (UV) illuminated conditions (254 nm UV light). Overall, this work can provide meaningful guidance for the design and construction of oxide hetero-structured devices based on wide-bandgap semiconducting Ga2O3.

Key words: Ga2O3/FTO heterojunction, band alignment, magnetron sputtering, free-standing

中图分类号:  (Other nonlinear optical materials; photorefractive and semiconductor materials)

  • 42.70.Nq
42.70.-a (Optical materials) 85.60.Gz (Photodetectors (including infrared and CCD detectors))