Flux-to-voltage characteristic simulation of superconducting nanowire interference device

doi:10.1088/1674-1056/ab90f4

中国物理B ›› 2020, Vol. 29 ›› Issue (9): 98501-098501.doi: 10.1088/1674-1056/ab90f4

Flux-to-voltage characteristic simulation of superconducting nanowire interference device

Xing-Yu Zhang(张兴雨), Yong-Liang Wang(王永良), Chao-Lin Lv(吕超林), Li-Xing You(尤立星), Hao Li(李浩), Zhen Wang(王镇), Xiao-Ming Xie(谢晓明)

1 State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences(CAS), Shanghai 200050, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 CAS Center for Excellence in Superconducting Electronics, Shanghai 200050, China

收稿日期:2020-03-09 修回日期:2020-04-08 接受日期:2020-05-07 出版日期:2020-09-05 发布日期:2020-09-05
通讯作者: Yong-Liang Wang, Li-Xing You E-mail:wangyl@mail.sim.ac.cn;lxyou@mail.sim.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0304000), the National Natural Science Foundation of China (Grant Nos. 61671438 and 61827823), the Science and Technology Commission of Shanghai Municipality, China (Grant No. 18511110200), and the Program of Shanghai Academic/Technology Research Leader, China (Grant No. 18XD1404600).

Flux-to-voltage characteristic simulation of superconducting nanowire interference device

Xing-Yu Zhang(张兴雨)^1,2, Yong-Liang Wang(王永良)^1,3, Chao-Lin Lv(吕超林)^1,3, Li-Xing You(尤立星)^1,2,3, Hao Li(李浩)^1,3, Zhen Wang(王镇)^1,3, Xiao-Ming Xie(谢晓明)^1,3

1 State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences(CAS), Shanghai 200050, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 CAS Center for Excellence in Superconducting Electronics, Shanghai 200050, China

Received:2020-03-09 Revised:2020-04-08 Accepted:2020-05-07 Online:2020-09-05 Published:2020-09-05
Contact: Yong-Liang Wang, Li-Xing You E-mail:wangyl@mail.sim.ac.cn;lxyou@mail.sim.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0304000), the National Natural Science Foundation of China (Grant Nos. 61671438 and 61827823), the Science and Technology Commission of Shanghai Municipality, China (Grant No. 18511110200), and the Program of Shanghai Academic/Technology Research Leader, China (Grant No. 18XD1404600).

摘要/Abstract

摘要： Inspired by recent discoveries of the quasi-Josephson effect in shunted nanowire devices, we propose a superconducting nanowire interference device in this study, which is a combination of parallel ultrathin superconducting nanowires and a shunt resistor. A simple model based on the switching effect of nanowires and fluxoid quantization effect is developed to describe the behavior of the device. The current-voltage characteristic and flux-to-voltage conversion curves are simulated and discussed to verify the feasibility. Appropriate parameters of the shunt resistor and inductor are deduced for fabricating the devices.

关键词: superconducting nanowire, switching effect, flux-to-voltage conversion, interference device

Abstract: Inspired by recent discoveries of the quasi-Josephson effect in shunted nanowire devices, we propose a superconducting nanowire interference device in this study, which is a combination of parallel ultrathin superconducting nanowires and a shunt resistor. A simple model based on the switching effect of nanowires and fluxoid quantization effect is developed to describe the behavior of the device. The current-voltage characteristic and flux-to-voltage conversion curves are simulated and discussed to verify the feasibility. Appropriate parameters of the shunt resistor and inductor are deduced for fabricating the devices.

Key words: superconducting nanowire, switching effect, flux-to-voltage conversion, interference device

中图分类号: (Superconducting device characterization, design, and modeling)

85.25.Am

张兴雨, 王永良, 吕超林, 尤立星, 李浩, 王镇, 谢晓明. Flux-to-voltage characteristic simulation of superconducting nanowire interference device[J]. 中国物理B, 2020, 29(9): 98501-098501.

Xing-Yu Zhang(张兴雨), Yong-Liang Wang(王永良), Chao-Lin Lv(吕超林), Li-Xing You(尤立星), Hao Li(李浩), Zhen Wang(王镇), Xiao-Ming Xie(谢晓明). Flux-to-voltage characteristic simulation of superconducting nanowire interference device[J]. Chin. Phys. B, 2020, 29(9): 98501-098501.

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Flux-to-voltage characteristic simulation of superconducting nanowire interference device

Flux-to-voltage characteristic simulation of superconducting nanowire interference device

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