Review of resistive switching mechanisms for memristive neuromorphic devices

doi:10.1088/1674-1056/aba9c7

中国物理B ›› 2020, Vol. 29 ›› Issue (9): 97305-097305.doi: 10.1088/1674-1056/aba9c7

所属专题： SPECIAL TOPIC — Physics in neuromorphic devices

Review of resistive switching mechanisms for memristive neuromorphic devices

Rui Yang(杨蕊)

State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

收稿日期:2020-05-14 修回日期:2020-07-06 接受日期:2020-07-28 出版日期:2020-09-05 发布日期:2020-09-05
通讯作者: Rui Yang E-mail:yangrui@hust.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. U1832116 and 51772112) and Fundamental Research Funds for the Central Universities, China (Grant No. HUST: 2016YXZD058).

Review of resistive switching mechanisms for memristive neuromorphic devices

Rui Yang(杨蕊)

State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

Received:2020-05-14 Revised:2020-07-06 Accepted:2020-07-28 Online:2020-09-05 Published:2020-09-05
Contact: Rui Yang E-mail:yangrui@hust.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. U1832116 and 51772112) and Fundamental Research Funds for the Central Universities, China (Grant No. HUST: 2016YXZD058).

摘要/Abstract

摘要： Memristive devices have attracted intensive attention in developing hardware neuromorphic computing systems with high energy efficiency due to their simple structure, low power consumption, and rich switching dynamics resembling biological synapses and neurons in the last decades. Fruitful demonstrations have been achieved in memristive synapses neurons and neural networks in the last few years. Versatile dynamics are involved in the data processing and storage in biological neurons and synapses, which ask for carefully tuning the switching dynamics of the memristive emulators. Note that switching dynamics of the memristive devices are closely related to switching mechanisms. Herein, from the perspective of switching dynamics modulations, the mainstream switching mechanisms including redox reaction with ion migration and electronic effect have been systemically reviewed. The approaches to tune the switching dynamics in the devices with different mechanisms have been described. Finally, some other mechanisms involved in neuromorphic computing are briefly introduced.

关键词: memristive devices, resistive switching mechanisms, neuromorphic computing

Abstract: Memristive devices have attracted intensive attention in developing hardware neuromorphic computing systems with high energy efficiency due to their simple structure, low power consumption, and rich switching dynamics resembling biological synapses and neurons in the last decades. Fruitful demonstrations have been achieved in memristive synapses neurons and neural networks in the last few years. Versatile dynamics are involved in the data processing and storage in biological neurons and synapses, which ask for carefully tuning the switching dynamics of the memristive emulators. Note that switching dynamics of the memristive devices are closely related to switching mechanisms. Herein, from the perspective of switching dynamics modulations, the mainstream switching mechanisms including redox reaction with ion migration and electronic effect have been systemically reviewed. The approaches to tune the switching dynamics in the devices with different mechanisms have been described. Finally, some other mechanisms involved in neuromorphic computing are briefly introduced.

Key words: memristive devices, resistive switching mechanisms, neuromorphic computing

中图分类号: (Electrical properties of specific thin films)

73.61.-r

68.37.-d (Microscopy of surfaces, interfaces, and thin films) 68.55.ag (Semiconductors)

杨蕊. Review of resistive switching mechanisms for memristive neuromorphic devices[J]. 中国物理B, 2020, 29(9): 97305-097305.

Rui Yang(杨蕊). Review of resistive switching mechanisms for memristive neuromorphic devices[J]. Chin. Phys. B, 2020, 29(9): 97305-097305.

参考文献 155

[1]	Strukov D B 2011 Nature 476 403 doi: 10.1038/476403a
[2]	Versace M and Chandler B 2010 IEEE Spectr. 47 30
[3]	Mohammed A. Zidan Strachan J P and Lu W D 2018 Nat. Electron. 1 22 doi: 10.1038/s41928-017-0006-8
[4]	Merolla P A, Arthur J V, Alvarez-Icaza R, Cassidy A S, Sawada J, Akopyan F, Jackson B L, Imam N, Guo C, Nakamura Y, Brezzo B, Vo I, Esser S K, Appuswamy R, Taba B, Amir A, Flickner M D, Risk W P, Manohar R and Modha D S 2014 Science 345 668 doi: 10.1126/science.1254642
[5]	Silver D, Huang A, Maddison C J, Guez A, Sifre L, van den Driessche G, Schrittwieser J, Antonoglou I, Panneershelvam V, Lanctot M, Dieleman S, Grewe D, Nham J, Kalchbrenner N, Sutskever I, Lillicrap T, Leach M, Kavukcuoglu K, Graepel T and Hassabis D 2016 Nature 529 484 doi: 10.1038/nature16961
[6]	Li C, Wang Z, Rao M, Belkin D, Song W, Jiang H, Yan P, Li Y, Lin P, Hu M, Ge N, Strachan J P, Barnell M, Wu Q, Williams R S, Yang J J and Xia Q 2019 Nat. Mach. Intell. 1 49 doi: 10.1038/s42256-018-0001-4
[7]	Wang Z, Joshi S, Savel'ev S, Song W, Midya R, Li Y, Rao M, Yan P, Asapu S, Zhuo Y, Jiang H, Lin P, Li C, Yoon JH, Upadhyay NK, Zhang J, Hu M, Strachan J P, Barnell M, Wu Q, Wu H, Williams R S, Xia Q and Yang J J 2018 Nat. Electron. 1 137 doi: 10.1038/s41928-018-0023-2
[8]	Xia Q and Yang J J 2019 Nat. Mater. 18 309 doi: 10.1038/s41563-019-0291-x
[9]	Strukov D B, Snider G S, Stewart D R and Williams R S 2008 Nature 453 80 doi: 10.1038/nature06932
[10]	Yang J J, Pickett M D, Li X M, Ohlberg DAA, Stewart D R and Williams R S 2008 Nat. Nanotechnol. 3 429 doi: 10.1038/nnano.2008.160
[11]	Chua L O 1971 IEEE Trans. Circuit Theory 18 507 doi: 10.1109/TCT.1971.1083337
[12]	Kim S, Du C, Sheridan P, Ma W, Choi S and Lu W D 2015 Nano Lett. 15 2203 doi: 10.1021/acs.nanolett.5b00697
[13]	Yang R, Huang H M, Hong Q H, Yin X B, Tan Z H, Shi T, Zhou Y X, Miao X S, Wang X P, Mi S B, Jia C L and Guo X 2018 Adv. Funct. Mater. 28 1704455 doi: 10.1002/adfm.201704455
[14]	Xiong J, Yang R, Shaibo J, Huang H M, He HK, Zhou W and Guo X 2019 Adv. Funct. Mater. 29 1807316 doi: 10.1002/adfm.201807316
[15]	Prodromakis T, Toumazou C and Chua L 2012 Nat. Mater. 11 478 doi: 10.1038/nmat3338
[16]	Sawa A 2008 Mater. Today 11 28
[17]	Waser R and Aono M 2007 Nat. Mater. 6 833 doi: 10.1038/nmat2023
[18]	Waser R, Dittmann R, Staikov G and Szot K 2009 Adv. Mater. 21 2632 doi: 10.1002/adma.200900375
[19]	Wang J and Zhuge F 2019 Adv. Mater. Technol. 4 1800544 doi: 10.1002/admt.201800544
[20]	Shi T, Yang R and Guo X 2016 Solid State Ionics 296 114 doi: 10.1016/j.ssi.2016.09.001
[21]	Lv F C, Yang R and Guo X 2017 Solid State Ionics 303 161 doi: 10.1016/j.ssi.2017.01.030
[22]	Chen W, Barnaby H J and Kozicki M N 2016 IEEE Electron Device Lett. 37 580 doi: 10.1109/LED.2016.2540361
[23]	Du G, Li H X, Mao Q N and Ji Z G 2016 J. Phys. D: Appl. Phys. 49 445105 doi: 10.1088/0022-3727/49/44/445105
[24]	Zhao X N, Xu H Y, Wang Z Q, Zhang L, Ma J G and Liu Y C 2015 Carbon 91 38 doi: 10.1016/j.carbon.2015.04.031
[25]	Liu T, Verma M, Kang Y H and Orlowski M 2012 Appl. Phys. Lett. 101 073510 doi: 10.1063/1.4746276
[26]	Kim M K and Lee J S 2018 ACS Nano 12 1680 doi: 10.1021/acsnano.7b08331
[27]	Pan C B, Ji Y F, Xiao N, Hui F, Tang K C, Guo Y Z, Xie X M, Puglisi F M, Larcher L, Miranda E, Jiang L L, Shi Y Y, Valov I, McIntyre P C, Waser R, and Lanza M 2017 Adv. Funct. Mater. 27 1604811 doi: 10.1002/adfm.201604811
[28]	Cheng C, Li Y, Zhang T, Fang Y, Zhu J, Liu K, Xu L, Cai Y, Yan X, Yang Y and Huang R 2018 J. Appl. Phys. 124 152103 doi: 10.1063/1.5037962
[29]	Wang Z, Rao M, Midya R, Joshi S, Jiang H, Lin P, Song W, Asapu S, Zhuo Y, Li C, Wu H, Xia Q and Yang J J 2018 Adv. Funct. Mater. 28 1704862 doi: 10.1002/adfm.201704862
[30]	Lee J and Lu W D 2018 Adv. Mater. 30 1702770 doi: 10.1002/adma.201702770
[31]	Choi S, Tan S H, Li Z F, Kim Y, Choi C, Chen P Y, Yeon H, Yu S M and Kim J 2018 Nat. Mater. 17 335 doi: 10.1038/s41563-017-0001-5
[32]	Shibuya K, Dittmann R, Mi S B and Waser R 2010 Adv. Mater. 22 411 doi: 10.1002/adma.200901493
[33]	Miao F, Yi W, Goldfarb I, Yang J J, Zhang M X, Pickett M D, Strachan J P, Medeiros-Ribeiro G and Williams R S 2012 ACS Nano 6 2312 doi: 10.1021/nn2044577
[34]	Bae S H, Lee S, Koo H, Lin L, Jo B H, Park C and Wang Z L 2013 Adv. Mater. 25 5098 doi: 10.1002/adma.201302511
[35]	Krishnan K, Tsuruoka T, Mannequin C and Aono M 2016 Adv. Mater. 28 640 doi: 10.1002/adma.201504202
[36]	Li J, Duan Q, Zhang T, Yin M, Sun X, Cai Y, Li L, Yang Y and Huang R 2017 RSC Adv. 7 43132 doi: 10.1039/C7RA07522G
[37]	Li D, Wu B, Zhu X, Wang J, Ryu B, Lu W D, Lu W and Liang X 2018 ACS Nano 12 9240 doi: 10.1021/acsnano.8b03977
[38]	Pereda A E 2014 Nat. Rev. Neurosci. 15 250 doi: 10.1038/nrn3708
[39]	Nicholls J G, Martin A R, Fuchs PA, Brown D A, Diamond, M E and Weisblat D A 2012 From Neuron to Brain (Sunderland: Sinauer Associates, Inc.) Ch. 6
[40]	Pickett M D, Medeiros-Ribeiro G and Williams R S 2012 Nat. Mater. 12 114
[41]	Zhang X, Wang W, Liu Q, Zhao X, Wei J, Cao R, Yao Z, Zhu X, Zhang F, Lv H, Long S and Liu M 2018 IEEE Electron Device Lett. 39 308 doi: 10.1109/LED.2017.2782752
[42]	Tuma T, Pantazi A, Le Gallo M, Sebastian A and Eleftheriou E 2016 Nat. Nanotechnol. 11 693 doi: 10.1038/nnano.2016.70
[43]	Choi B J, Chen ABK, Yang X and Chen I W 2011 Adv. Mater. 23 3847
[44]	Chudnovskii F A, Odynets L L, Pergament A L and Stefanovich G B 1996 J. Solid State Chem. 122 95 doi: 10.1006/jssc.1996.0087
[45]	Torriss B, Margot J and Chaker M 2017 Sci. Rep. 7 40915 doi: 10.1038/srep40915
[46]	Karpov I, Savransky S and Karpov V 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Monterey, CA, USA, Aug.
[47]	Torrejon J, Riou M, Araujo F A, Tsunegi S, Khalsa G, Querlioz D, Bortolotti P, Cros V, Yakushiji K, Fukushima A, Kubota H, Uasa S Y, Stiles M D and Grollier J 2017 Nature 547 428 doi: 10.1038/nature23011
[48]	Terabe K, Hasegawa T, Nakayama T and Aono M 2005 Nature 433 47 doi: 10.1038/nature03190
[49]	Aono M and Hasegawa T 2010 Proc. IEEE 98 2228 doi: 10.1109/JPROC.2010.2061830
[50]	Hasegawa T, Ohno T, Terabe K, Tsuruoka T, Nakayama T, Gimzewski J K, and Aono M 2010 Adv. Mater. 22 1831 doi: 10.1002/adma.200903680
[51]	Valov I, Waser R, Jameson J R and Kozicki M N 2011 Nanotechnology 22 254003 doi: 10.1088/0957-4484/22/25/254003
[52]	Yang Y, Gao P, Li L, Pan X, Tappertzhofen S, Choi S, Waser R, Valov I and Lu W D 2014 Nat. Commun. 5 4232 doi: 10.1038/ncomms5232
[53]	Valov I and Lu W D 2016 Nanoscale 8 13828 doi: 10.1039/C6NR01383J
[54]	Kozicki M N, Park M and Mitkova M 2005 IEEE Trans. Nanotechnol. 4 331 doi: 10.1109/TNANO.2005.846936
[55]	Russo U, Kamalanathan D, Ielmini D, Lacaita A L and Kozicki M N 2009 IEEE Trans. Electron Devices 56 1040
[56]	Hsiung C P, Liao H W, Gan J Y, Wu T B, Hwang J C, Chen F and Tsai M J 2010 ACS Nano 4 5414 doi: 10.1021/nn1010667
[57]	Valov I 2014 Chemelectrochem 1 26 doi: 10.1002/celc.201300165
[58]	Liu Q, Sun J, Lv H B, Long S B, Yin K B, Wan N, Li Y T, Sun L T and Liu M 2012 Adv. Mater. 24 1844 doi: 10.1002/adma.201104104
[59]	Sun Y, Song C, Yin J, Chen X, Wan Q, Zeng F and Pan F 2017 ACS Appl. Mater. Inter. 9 34064 doi: 10.1021/acsami.7b09710
[60]	Choi SJ, Park G S, Kim K H, Cho S, Yang W Y, Li X S, Moon J H, Lee K J and Kim K 2011 Adv. Mater. 23 3272 doi: 10.1002/adma.201100507
[61]	Yang Y, Gao P, Gaba S, Chang T, Pan X and Lu W 2012 Nat. Commun. 3 732 doi: 10.1038/ncomms1737
[62]	La Barbera S, Vuillaume D and Alibart F 2015 ACS Nano 9 941 doi: 10.1021/nn506735m
[63]	Zhao X, Ma J, Xiao X, Liu Q, Shao L, Chen D, Liu S, Niu J, Zhang X, Wang Y, Cao R, Wang W, Di Z, Lv H, Long S and Liu M 2018 Adv. Mater. 30 1705193 doi: 10.1002/adma.201705193
[64]	Sun H, Liu Q, Li C, Long S, Lv H, Bi C, Huo Z, Li L and Liu M 2014 Adv. Funct. Mater. 24 5679 doi: 10.1002/adfm.201401304
[65]	Zhao X, Liu S, Niu J, Liao L, Liu Q, Xiao X, Lv H, Long S, Banerjee W, Li W, Si S and Liu M 2017 Small 13 1603948 doi: 10.1002/smll.201603948
[66]	Woo J, Lee D, Cha E, Lee S, Park S and Hwang H 2014 IEEE Electron Device Lett. 35 60 doi: 10.1109/LED.2013.2290120
[67]	Tsuruoka T, Terabe K, Hasegawa T, Valov I, Rainer W and Aono M 2012 Adv. Funct. Mater. 22 70 doi: 10.1002/adfm.201101846
[68]	Tappertzhofen S, Valov I, Tsuruoka T, Hasegawa T, Waser R and Aono M 2013 ACS Nano 7 6396 doi: 10.1021/nn4026614
[69]	Xu Z, Bando Y, Wang W L, Bai X D and Golberg D 2010 ACS Nano 4 2515 doi: 10.1021/nn100483a
[70]	Wu S M, Tsuruoka T, Terabe K, Hasegawa T, Hill J P, Ariga K and Aono M 2011 Adv. Funct. Mater. 21 93 doi: 10.1002/adfm.201001520
[71]	Liu D Q, Cheng H F, Wang G, Zhu X and Wang N N 2013 J. Appl. Phys. 114 154906 doi: 10.1063/1.4826362
[72]	Song J, Woo J, Prakash A, Lee D and Hwang H 2015 IEEE Electron Device Lett. 36 681 doi: 10.1109/LED.2015.2430332
[73]	Wang Z, Joshi S, Savel'ev S E, Jiang H, Midya R, Lin P, Hu M, Ge N, Strachan J P, Li Z, Wu Q, Barnell M, Li G L, Xin H L, Williams R S, Xia Q and Yang J J 2017 Nat. Mater. 16 101 doi: 10.1038/nmat4756
[74]	Jiang H, Belkin D, Savel'ev S E, Lin S Y, Wang Z R, Li Y N, Joshi S, Midya R, Li C, Rao M Y, Barnell M, Wu Q, Yang J J and Xia Q F 2017 Nat. Commun. 8 882 doi: 10.1038/s41467-017-00869-x
[75]	You T, Du N, Slesazeck S, Mikolajick T, Li G, Bürger D, Skorupa I, Stöcker H, Abendroth B, Beyer A, Volz K, Schmidt O G and Schmidt H 2014 ACS Appl. Mater. Inter. 6 19758 doi: 10.1021/am504871g
[76]	Shi J, Ha S D, Zhou Y, Schoofs F and Ramanathan S 2013 Nat. Commun. 4 2676 doi: 10.1038/ncomms3676
[77]	Liu H, Dong Y, Cherukara M J, Sasikumar K, Narayanan B, Cai Z, Lai B, Stan L, Hong S, Chan M K Y, Sankaranarayanan S, Zhou H and Fong D D 2018 ACS Nano 12 4938 doi: 10.1021/acsnano.8b02028
[78]	Lubben M, Wiefels S, Waser R and Valov I 2018 Adv. Electron. Mater. 4 1700458 doi: 10.1002/aelm.201700458
[79]	Yao LD, Inkinen S and van Dijken S 2017 Nat. Commun. 8 14544 doi: 10.1038/ncomms14544
[80]	Lenser C, Patt M, Menzel S, Kohl A, Wiemann C, Schneider C M, Waser R and Dittmann R 2014 Adv. Funct. Mater. 24 4466 doi: 10.1002/adfm.201304233
[81]	Moors M, Adepalli K K, Lu Q Y, Wedig A, Baumer C, Skaja K, Arndt B, Tuller H L, Dittmann R, Waser R, Yildiz B and Valov I 2016 ACS Nano 10 1481 doi: 10.1021/acsnano.5b07020
[82]	Mehonic A, Buckwell M, Montesi L, Munde M S, Gao D, Hudziak S, Chater R J, Fearn S, McPhail D, Bosman M, Shluger A L and Kenyon A J 2016 Adv. Mater. 28 7486 doi: 10.1002/adma.201601208
[83]	Li C, Gao B, Yao Y, Guan X X, Shen X, Wang Y G, Huang P, Liu L F, Liu X Y, Li J J, Gu C Z, Kang J F and Yu R C 2017 Adv. Mater. 29 1602976 doi: 10.1002/adma.201602976
[84]	Tian H, Chen H Y, Gao B, Yu S M, Liang J L, Yang Y, Xie D, Kang J F, Ren T L, Zhang Y G and Wong H 2013 Nano Lett. 13 651 doi: 10.1021/nl304246d
[85]	Yang Y C and Huang R 2018 Nat. Electron. 1 274 doi: 10.1038/s41928-018-0069-1
[86]	Yang J J, Miao F, Pickett M D, Ohlberg D, Stewart D R, Lau C N and Williams R S 2009 Nanotechnology 21 215201
[87]	Kwon D H, Kim K M, Jang J H, Jeon J M, Lee M H, Kim G H, Li X S, Park G S, Lee B, Han S, Kim M and Hwang C S 2010 Nat. Nanotechnol. 5 148 doi: 10.1038/nnano.2009.456
[88]	Strachan J P, Pickett M D, Yang J J, Aloni S, Kilcoyne A, Medeiros-Ribeiro G and Williams R S 2010 Adv. Mater. 22 3573 doi: 10.1002/adma.201000186
[89]	Tan Z H, Yang R, Terabe K, Yin X B, Zhang X D and Guo X 2016 Adv. Mater. 28 377 doi: 10.1002/adma.201503575
[90]	Yin J, Zeng F, Wan Q, Li F, Sun Y M, Hu Y D, Liu J L, Li G Q and Pan F 2018 Adv. Funct. Mater. 28 1706927 doi: 10.1002/adfm.201706927
[91]	Chen J Y, Huang C W, Chiu C H, Huang Y T and Wu W W 2015 Adv. Mater. 27 5028 doi: 10.1002/adma.201502758
[92]	Lee M J, Lee C B, Lee D, Lee S R, Chang M, Hur J H, Kim Y B, Kim C J, Seo D H, Seo S, Chung U I, Yoo I K and Kim K 2011 Nat. Mater. 10 625 doi: 10.1038/nmat3070
[93]	Park G S, Kim Y B, Park S Y, Li X S, Heo S, Lee M J, Chang M, Kwon J H, Kim M, Chung U I, Dittmann R, Waser R and Kim K 2013 Nat. Commun. 4 2382 doi: 10.1038/ncomms3382
[94]	Muenstermann R, Menke T, Dittmann R and Waser R 2010 Adv. Mater. 22 4819 doi: 10.1002/adma.201001872
[95]	Yang J J, Borghetti J, Murphy D, Stewart D R and Williams R S 2009 Adv. Mater. 21 3754 doi: 10.1002/adma.200900822
[96]	Janousch M, Meijer G I, Staub U, Delley B, Karg S F and Andreasson B P 2007 Adv. Mater. 19 2232 doi: 10.1002/adma.200602915
[97]	Yang R, Terabe K, Tsuruoka T, Hasegawa T and Aono M 2012 Appl. Phys. Lett. 100 231603 doi: 10.1063/1.4726084
[98]	Yang R, Terabe K, Liu G, Tsuruoka T, Hasegawa T, Gimzewski J K and Aono M 2012 ACS Nano 6 9515 doi: 10.1021/nn302510e
[99]	Gao P, Wang Z Z, Fu W Y, Liao ZL, Liu K H, Wang W L, Bai X D and Wang E 2010 Micron 41 301 doi: 10.1016/j.micron.2009.11.010
[100]	Baeumer C, Valenta R, Schmitz C, Locatelli A, Mentes T O, Rogers S P, Sala A, Raab N, Nemsak S, Shim M, Schneider C M, Menzel S, Waser R and Dittmann R 2017 ACS Nano 11 6921 doi: 10.1021/acsnano.7b02113
[101]	Park J, Kwon D H, Park H, Jung C U and Kim M 2014 Appl. Phys. Lett. 105 183103 doi: 10.1063/1.4901053
[102]	Cooper D, Baeumer C, Bernier N, Marchewka A, La Torre C, Dunin-Borkowski R E, Menzel S, Waser R and Dittmann R 2017 Adv. Mater. 29 1700212 doi: 10.1002/adma.201700212
[103]	Kumar S, Graves C E, Strachan J P, Grafals E M, Kilcoyne A L, Tyliszczak T, Weker J N, Nishi Y and Williams R S 2016 Adv. Mater. 28 2772 doi: 10.1002/adma.201505435
[104]	Kumar S, Wang Z W, Huang X P, Kumari N, Davila N, Strachan J P, Vine D, Kilcoyne ALD, Nishi Y and Williams R S 2016 ACS Nano 10 11205 doi: 10.1021/acsnano.6b06275
[105]	Miao F, Strachan J P, Yang J J, Zhang M X, Goldfarb I, Torrezan A C, Eschbach P, Kelley R D, Medeiros-Ribeiro G and Williams R S 2011 Adv. Mater. 23 5633 doi: 10.1002/adma.201103379
[106]	Chen J Y, Hsin C L, Huang C W, Chiu C H, Huang Y T, Lin S J, Wu W W and Chen L J 2013 Nano Lett. 13 3671 doi: 10.1021/nl4015638
[107]	Wedig A, Luebben M, Cho D Y, Moors M, Skaja K, Rana V, Hasegawa T, Adepalli K K, Yildiz B, Waser R and Valov I 2016 Nat. Nanotechnol. 11 67 doi: 10.1038/nnano.2015.221
[108]	Du C, Ma W, Chang T, Sheridan P and Lu W D 2015 Adv. Funct. Mater. 25 4290 doi: 10.1002/adfm.201501427
[109]	Xiong J, Yang R, Shaibo J, Huang H M, He H K, Zhou W and Guo X 2019 Adv. Funct. Mater. 29 1807316 doi: 10.1002/adfm.201807316
[110]	Bagdzevicius S, Maas K, Boudard M and Burriel M 2017 J. Electroceram. 39 157 doi: 10.1007/s10832-017-0087-9
[111]	Ha S D and Ramanathan S 2011 J. Appl. Phys. 110 071101 doi: 10.1063/1.3640806
[112]	Lee H S, Park H H and Rozenberg M J 2015 Nanoscale 7 6444 doi: 10.1039/C5NR00861A
[113]	Yang R, Li X M, Yu W D, Gao X D, Liu X J, Cao X, Wang Q and Chen L D 2009 J. Phys. D-Appl. Phys. 42 175408 doi: 10.1088/0022-3727/42/17/175408
[114]	Yang R, Li X M, Yu W D, Gao X D, Shang D S, Liu X J, Cao X, Wang Q and Chen L D 2009 Appl. Phys. Lett. 95 072105 doi: 10.1063/1.3203999
[115]	Asanuma S, Akoh H, Yamada H and Sawa A 2009 Phys. Rev. B 80 235113 doi: 10.1103/PhysRevB.80.235113
[116]	Arndt B, Borgatti F, Offi F, Phillips M, Parreira P, Meiners T, Menzel S, Skaja K, Panaccione G, MacLaren D A, Waser R and Dittmann R 2017 Adv. Funct. Mater. 27 1702282 doi: 10.1002/adfm.201702282
[117]	Pan R B, Li J, Zhuge F, Zhu L Q, Liang L Y, Zhang H L, Gao J H, Cao H T, Fu B and Li K 2016 Appl. Phys. Lett. 108 013504 doi: 10.1063/1.4939436
[118]	Chen ABK, Kim S G, Wang Y D, Tung W S and Chen I W 2011 Nat. Nanotechnol. 6 237 doi: 10.1038/nnano.2011.21
[119]	Wang L Y, Yang J, Zhu Y, Yi M D, Xie L H, Ju R L, Wang Z Y, Liu L T, Li T F, Zhang C X, Chen Y, Wu Y N and Huang W 2017 Adv. Electron. Mater. 3 1700063 doi: 10.1002/aelm.201700063
[120]	Choi H Y, Wu C, Bok C H and Kim T W 2017 NPG Asia Mater. 9 e413
[121]	Shao X L, Zhou L W, Yoon K J, Jiang H, Zhao J S, Zhang K L, Yoo S and Hwang C S 2015 Nanoscale 7 11063 doi: 10.1039/C4NR06417H
[122]	Yin X B, Tan Z H and Guo X 2015 Phys. Chem. Chem. Phys. 17 134 doi: 10.1039/C4CP04151H
[123]	Younis A, Chu D W, Lin X, Yi J B, Dang F and Li S A 2013 ACS Appl. Mater. Inter. 5 2249 doi: 10.1021/am400168m
[124]	Yang Y C, Pan F, Zeng F and Liu M 2009 J. Appl. Phys. 106 123705 doi: 10.1063/1.3273329
[125]	Yoon J H, Kim K M, Song SJ, Seok J Y, Yoon K J, Kwon D E, Park T H, Kwon Y J, Shao X and Hwang C S 2015 Adv. Mater. 27 3811 doi: 10.1002/adma.201501167
[126]	Kumar S, Strachan J P and Williams R S 2017 Nature 548 318 doi: 10.1038/nature23307
[127]	Kumar S, Wang Z W, Davila N, Kumari N, Norris K J, Huang X P, Strachan J P, Vine D, Kilcoyne ALD, Nishi Y and Williams R S 2017 Nat. Commun. 8 658 doi: 10.1038/s41467-017-00773-4
[128]	Kim J, Ko C, Frenzel A, Ramanathan S and Hoffman J E 2010 Appl. Phys. Lett. 96 213106 doi: 10.1063/1.3435466
[129]	Lee S B, Kim K, Oh J S, Kahng B and Lee J S 2013 Appl. Phys. Lett. 102 063501 doi: 10.1063/1.4790842
[130]	Park J, Yoo J, Song J, Sung C and Hwang H 2018 IEEE Electron Device Lett. 39 1171 doi: 10.1109/LED.2018.2845878
[131]	Mikheev E, Hoskins B D, Strukov D B and Stemmer S 2014 Nat. Commun. 5 3990 doi: 10.1038/ncomms4990
[132]	Wang J R, Pan R B, Cao H T, Wang Y, Liang L Y, Zhang H L, Gao J H and Zhuge F 2016 Appl. Phys. Lett. 109 143505 doi: 10.1063/1.4963887
[133]	Yan ZB and Liu J M 2013 Sci. Rep. 3 2482 doi: 10.1038/srep02482
[134]	Goossens A S, Das A and Banerjee T 2018 J. Appl. Phys. 124 152102 doi: 10.1063/1.5037965
[135]	Kim H J, Zheng H, Park J S, Kim D H, Kang C J, Jang J T, Kim D H and Yoon T S 2017 Nanotechnology 28 285203 doi: 10.1088/1361-6528/aa712c
[136]	Fang T N, Kaza S, Haddad S, Chen A, Wu Y C, Lan Z, Avanzino S, Liao D, Gopalan C and Choi S 2006 Electron Devices Meeting San Francisco, CA, USA, Dec., 2006
[137]	Liu Q, Guan W, Long S, Jia R, Liu M and Chen J 2008 Appl. Phys. Lett. 92 012117 doi: 10.1063/1.2832660
[138]	Schroeder H, Zhirnov V V, Cavin R K and Waser R 2010 J. Appl. Phys. 107 054517 doi: 10.1063/1.3319591
[139]	Yang X, Tudosa J, Choi B J, Chen A and Chen I W 2014 Nano Lett. 14 5058 doi: 10.1021/nl501710r
[140]	Yang X, Choi B J, Chen A and Chen I W 2013 ACS Nano 7 2302 doi: 10.1021/nn3054544
[141]	Dubost V, Cren T, Vaju C, Cario L, Corraze B, Janod E, Debontridder F, and Roditchev D 2013 Nano Lett. 13 3648 doi: 10.1021/nl401510p
[142]	Kim H T, Chae B G, Youn D H, Maeng S L, Kim G, Kang K Y and Lim Y S 2004 New J. Phys. 6 52 doi: 10.1088/1367-2630/6/1/052
[143]	Xue W, Liu G, Zhong Z, Dai Y, Shang J, Liu Y, Yang H, Yi X, Tan H and Pan L 2017 Adv. Mater. 29 1702162 doi: 10.1002/adma.201702162
[144]	Rozenberg M J, Inoue I H and Sanchez M J 2004 Phys. Rev. Lett. 92 178302 doi: 10.1103/PhysRevLett.92.178302
[145]	Kim K M, Choi B J, Lee M H, Kim G H, Song S J, Seok J Y, Yoon J H, Han S and Hwang C S 2011 Nanotechnology 22 254010 doi: 10.1088/0957-4484/22/25/254010
[146]	Zhu L Q, Wan C J, Guo L Q, Shi Y and Wan Q 2014 Nat. Commun. 5 3158 doi: 10.1038/ncomms4158
[147]	Zang Y, Shen H, Huang D, Di C A and Zhu D 2017 Adv. Mater. 29 1606088 doi: 10.1002/adma.201606088
[148]	Tian H, Mi W, Wang X F, Zhao H, Xie Q Y, Li C, Li Y X, Yang Y and Ren T L 2015 Nano Lett. 15 8013 doi: 10.1021/acs.nanolett.5b03283
[149]	Liu C, Yan X, Song X, Ding S, Zhang D W and Zhou P 2018 Nat. Nanotechnol. 13 404 doi: 10.1038/s41565-018-0102-6
[150]	Liu CS, Chen H W, Hou X, Zhang H, Han J, Jiang Y G, Zeng X Y, Zhang D W and Zhou P 2019 Nat. Nanotechnol. 14 662 doi: 10.1038/s41565-019-0462-6
[151]	Wan C J, Feng P, Wang W, Zhu L Q, Liu Z P, Shi Y and Wan Q 2016 Adv. Mater. 28 5878 doi: 10.1002/adma.201600820
[152]	Wang Q, Itoh Y, Tsuruoka T, Aono M and Hasegawa T 2015 Adv. Mater. 27 6029 doi: 10.1002/adma.201502678
[153]	van de Burgt Y, Lubberman E, Fuller E J, Keene S T, Faria G C, Agarwal S, Marinella M J, Talin A A and Salleo A 2017 Nat. Mater. 16 414 doi: 10.1038/nmat4856
[154]	Fuller E J, El Gabaly F, Leonard F, Agarwal S, Plimpton S J, Jacobs-Gedrim R B, James C D, Marinella M J and Talin A A 2017 Adv. Mater. 29 1604310 doi: 10.1002/adma.201604310
[155]	Yang J J and Xia Q 2017 Nat. Mater. 16 396 doi: 10.1038/nmat4870

Review of resistive switching mechanisms for memristive neuromorphic devices

Review of resistive switching mechanisms for memristive neuromorphic devices

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