Growth and physical characterization of high resistivityFe: β-Ga2O3 crystals

doi:10.1088/1674-1056/ab942d

中国物理B ›› 2020, Vol. 29 ›› Issue (8): 87201-087201.doi: 10.1088/1674-1056/ab942d

• SPECIAL TOPIC—Ultracold atom and its application in precision measurement • 上一篇下一篇

Growth and physical characterization of high resistivityFe: β-Ga₂O₃ crystals

Hao Zhang(张浩), Hui-Li Tang(唐慧丽), Nuo-Tian He(何诺天), Zhi-Chao Zhu(朱智超), Jia-Wen Chen(陈佳文), Bo Liu(刘波), Jun Xu(徐军)

1 MOE Key Laboratory of Advanced Micro-Structured Materials, School of Physics Science and Engineering, Institute for Advanced Study, Tongji University, Shanghai 200092, China;
2 School of Chemical Science and Engineering, Tongji University, Shanghai 200092, China;
3 Shanghai Engineering Research Center for Sapphire Crystals, Shanghai 201899, China

收稿日期:2020-04-20 修回日期:2020-05-10 出版日期:2020-08-05 发布日期:2020-08-05
通讯作者: Hui-Li Tang E-mail:tanghl@tongji.edu.cn
基金资助:
Project supported by the Scientific and Innovative Action Plan of Shanghai, China (Grant No. 18511110502) and Equipment Pre-research Fund Key Project, China (Grant No. 6140922010601).

Growth and physical characterization of high resistivityFe: β-Ga₂O₃ crystals

Hao Zhang(张浩)¹, Hui-Li Tang(唐慧丽)¹, Nuo-Tian He(何诺天)¹, Zhi-Chao Zhu(朱智超)², Jia-Wen Chen(陈佳文)¹, Bo Liu(刘波)¹, Jun Xu(徐军)^1,3

1 MOE Key Laboratory of Advanced Micro-Structured Materials, School of Physics Science and Engineering, Institute for Advanced Study, Tongji University, Shanghai 200092, China;
2 School of Chemical Science and Engineering, Tongji University, Shanghai 200092, China;
3 Shanghai Engineering Research Center for Sapphire Crystals, Shanghai 201899, China

Received:2020-04-20 Revised:2020-05-10 Online:2020-08-05 Published:2020-08-05
Contact: Hui-Li Tang E-mail:tanghl@tongji.edu.cn
Supported by:
Project supported by the Scientific and Innovative Action Plan of Shanghai, China (Grant No. 18511110502) and Equipment Pre-research Fund Key Project, China (Grant No. 6140922010601).

摘要/Abstract

摘要：

High quality 0.02 mol%, 0.05 mol%, and 0.08 mol% Fe:β-Ga₂O₃ single crystals were grown by the floating zone method. The crystal structure, optical, electrical, and thermal properties were measured and discussed. Fe:β-Ga₂O₃ single crystals showed transmittance of higher than 80% in the near infrared region. With the increase of the Fe doping concentration, the optical bandgaps reduced and room temperature resistivity increased. The resistivity of 0.08 mol% Fe:β-Ga₂O₃ crystal reached to 3.63×10¹¹ Ω·cm. The high resistivity Fe:β-Ga₂O₃ single crystals could be applied as the substrate for the high-power field effect transistors (FETs).

关键词: Fe:β-Ga₂O₃ crystal, high resistivity, crystal growth

Abstract:

Key words: Fe:β-Ga₂O₃ crystal, high resistivity, crystal growth

中图分类号: (Conductivity phenomena in semiconductors and insulators)

72.20.-i

71.20.Nr (Semiconductor compounds) 78.20.-e (Optical properties of bulk materials and thin films) 65.40.-b (Thermal properties of crystalline solids)

张浩, 唐慧丽, 何诺天, 朱智超, 陈佳文, 刘波, 徐军. Growth and physical characterization of high resistivityFe: β-Ga₂O₃ crystals[J]. 中国物理B, 2020, 29(8): 87201-087201.

Hao Zhang(张浩), Hui-Li Tang(唐慧丽), Nuo-Tian He(何诺天), Zhi-Chao Zhu(朱智超), Jia-Wen Chen(陈佳文), Bo Liu(刘波), Jun Xu(徐军). Growth and physical characterization of high resistivityFe: β-Ga₂O₃ crystals[J]. Chin. Phys. B, 2020, 29(8): 87201-087201.

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Growth and physical characterization of high resistivityFe: β-Ga₂O₃ crystals

Growth and physical characterization of high resistivityFe: β-Ga₂O₃ crystals

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