Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection

doi:10.1088/1674-1056/ab790a

中国物理B ›› 2020, Vol. 29 ›› Issue (4): 47802-047802.doi: 10.1088/1674-1056/ab790a

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection

Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Zhi-Jue Quan(全知觉), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益)

National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China

收稿日期:2020-01-16 修回日期:2020-02-18 出版日期:2020-04-05 发布日期:2020-04-05
通讯作者: Jian-Li Zhang E-mail:zhangjianli@ncu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51602141, 11674147, 61604066, 11604137, and 21405076), the National Key Research and Development Project of China (Grant Nos. 2016YFB0400600 and 2016YFB0400601), and the Key Research and Development Project of Jiangxi Province, China (Grant No. 20171BBE50052).

Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection

Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Zhi-Jue Quan(全知觉), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益)

National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China

Received:2020-01-16 Revised:2020-02-18 Online:2020-04-05 Published:2020-04-05
Contact: Jian-Li Zhang E-mail:zhangjianli@ncu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51602141, 11674147, 61604066, 11604137, and 21405076), the National Key Research and Development Project of China (Grant Nos. 2016YFB0400600 and 2016YFB0400601), and the Key Research and Development Project of Jiangxi Province, China (Grant No. 20171BBE50052).

摘要/Abstract

摘要： It is observed that the radiative recombination rate in InGaN-based light-emitting diode decreases with lattice temperature increasing. The effect of lattice temperature on the radiative recombination rate tends to be stable at high injection. Thus, there should be an upper limit for the radiative recombination rate in the quantum well with the carrier concentration increasing, even under the same lattice temperature. A modified and easily used ABC-model is proposed. It describes that the slope of the radiative recombination rate gradually decreases to zero, and further reaches a negative value in a small range of lattice temperature increasing. These provide a new insight into understanding the dependence of the radiative recombination rate on lattice temperature and carrier concentration in InGaN-based light-emitting diode.

关键词: InGaN-based light-emitting diode, carrier recombination, ABC-model, lattice temperature

Abstract: It is observed that the radiative recombination rate in InGaN-based light-emitting diode decreases with lattice temperature increasing. The effect of lattice temperature on the radiative recombination rate tends to be stable at high injection. Thus, there should be an upper limit for the radiative recombination rate in the quantum well with the carrier concentration increasing, even under the same lattice temperature. A modified and easily used ABC-model is proposed. It describes that the slope of the radiative recombination rate gradually decreases to zero, and further reaches a negative value in a small range of lattice temperature increasing. These provide a new insight into understanding the dependence of the radiative recombination rate on lattice temperature and carrier concentration in InGaN-based light-emitting diode.

Key words: InGaN-based light-emitting diode, carrier recombination, ABC-model, lattice temperature

中图分类号: (Electroluminescence)

78.60.Fi

85.30.-z (Semiconductor devices) 81.05.Ea (III-V semiconductors)

高江东, 张建立, 全知觉, 刘军林, 江风益. Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection[J]. 中国物理B, 2020, 29(4): 47802-047802.

Jiang-Dong Gao(高江东), Jian-Li Zhang(张建立), Zhi-Jue Quan(全知觉), Jun-Lin Liu(刘军林), Feng-Yi Jiang(江风益). Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection[J]. Chin. Phys. B, 2020, 29(4): 47802-047802.

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Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection

Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection

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