中国物理B ›› 2020, Vol. 29 ›› Issue (4): 46106-046106.doi: 10.1088/1674-1056/ab7804

所属专题： SPECIAL TOPIC — Ion beam technology

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇    下一篇

In situ luminescence measurement of 6H-SiC at low temperature

Meng-Lin Qiu(仇猛淋), Peng Yin(殷鹏), Guang-Fu Wang(王广甫), Ji-Gao Song(宋纪高), Chang-Wei Luo(罗长维), Ting-Shun Wang(王庭顺), Guo-Qiang Zhao(赵国强), Sha-Sha Lv(吕沙沙), Feng-Shou Zhang(张丰收), Bin Liao(廖斌)   

  1. 1 Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China;
    2 Beijing Radiation Center, Beijing 100875, China
  • 收稿日期:2019-12-31 修回日期:2020-02-17 出版日期:2020-04-05 发布日期:2020-04-05
  • 通讯作者: Guang-Fu Wang E-mail:88088@bnu.edu.cn
  • 基金资助:
    Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11905010), the Fundamental Research Funds for the Central Universities, China (Grant No. 2018NTST04), the China Postdoctoral Science Foundation (Grant No. 2019M650526), and Guangdong Province Key Area R&D Program, China (Grant No. 2019B090909002).

In situ luminescence measurement of 6H-SiC at low temperature

Meng-Lin Qiu(仇猛淋)1, Peng Yin(殷鹏)1, Guang-Fu Wang(王广甫)1,2, Ji-Gao Song(宋纪高)1, Chang-Wei Luo(罗长维)1, Ting-Shun Wang(王庭顺)1, Guo-Qiang Zhao(赵国强)1, Sha-Sha Lv(吕沙沙)1, Feng-Shou Zhang(张丰收)1,2, Bin Liao(廖斌)1   

  1. 1 Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China;
    2 Beijing Radiation Center, Beijing 100875, China
  • Received:2019-12-31 Revised:2020-02-17 Online:2020-04-05 Published:2020-04-05
  • Contact: Guang-Fu Wang E-mail:88088@bnu.edu.cn
  • Supported by:
    Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11905010), the Fundamental Research Funds for the Central Universities, China (Grant No. 2018NTST04), the China Postdoctoral Science Foundation (Grant No. 2019M650526), and Guangdong Province Key Area R&D Program, China (Grant No. 2019B090909002).

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摘要： To understand the evolution of defects in SiC during irradiation and the influence of temperature, in situ luminescence measurements of 6H-SiC crystal samples were carried out by ion beam induced luminescence (IBIL) measurement under 2 MeV H+ at 100 K, 150 K, 200 K, 250 K, and 300 K. A wide band (400-1000 nm) was found in the spectra at all temperatures, and the intensity of the IBIL spectra was highest at 150 K among the five temperatures. A small peak from 400 nm to 500 nm was only observed at 100 K, related with the D1 defect as a donor-acceptor pair (D-A) recombination. For further understanding the luminescent centers and their evolution, the orange band (1.79 eV) and the green band (2.14 eV) in the energy spectrum were analyzed by Gaussian decomposition, maybe due to the donor-deep defect/conduction band-deep defect transitions and Ti related bound excition, respectively. Finally, a single exponential fit showed that when the temperature exceeded 150 K, the two luminescence centers' resistance to radiation was reduced.

关键词: ion beam induced luminescence, 6H-SiC, temperature

Abstract: To understand the evolution of defects in SiC during irradiation and the influence of temperature, in situ luminescence measurements of 6H-SiC crystal samples were carried out by ion beam induced luminescence (IBIL) measurement under 2 MeV H+ at 100 K, 150 K, 200 K, 250 K, and 300 K. A wide band (400-1000 nm) was found in the spectra at all temperatures, and the intensity of the IBIL spectra was highest at 150 K among the five temperatures. A small peak from 400 nm to 500 nm was only observed at 100 K, related with the D1 defect as a donor-acceptor pair (D-A) recombination. For further understanding the luminescent centers and their evolution, the orange band (1.79 eV) and the green band (2.14 eV) in the energy spectrum were analyzed by Gaussian decomposition, maybe due to the donor-deep defect/conduction band-deep defect transitions and Ti related bound excition, respectively. Finally, a single exponential fit showed that when the temperature exceeded 150 K, the two luminescence centers' resistance to radiation was reduced.

Key words: ion beam induced luminescence, 6H-SiC, temperature

中图分类号:  (Semiconductors)

  • 61.82.Fk
61.80.Jh (Ion radiation effects) 61.72.J- (Point defects and defect clusters)