Energy band alignment at Cu2O/ZnO heterojunctions characterized by in situ x-ray photoelectron spectroscopy

doi:10.1088/1674-1056/28/8/087301

中国物理B ›› 2019, Vol. 28 ›› Issue (8): 87301-087301.doi: 10.1088/1674-1056/28/8/087301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Energy band alignment at Cu₂O/ZnO heterojunctions characterized by in situ x-ray photoelectron spectroscopy

Yan Zhao(赵妍), Hong-Bu Yin(尹泓卜), Ya-Jun Fu(符亚军), Xue-Min Wang(王雪敏), Wei-Dong Wu(吴卫东)

Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China

收稿日期:2018-11-25 修回日期:2019-05-06 出版日期:2019-08-05 发布日期:2019-08-05
通讯作者: Wei-Dong Wu E-mail:wuweidongding@163.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11404302) and the Laser Fusion Research Center Funds for Young Talents, China (Grant No. RCFPD1-2017-9).

Energy band alignment at Cu₂O/ZnO heterojunctions characterized by in situ x-ray photoelectron spectroscopy

Yan Zhao(赵妍), Hong-Bu Yin(尹泓卜), Ya-Jun Fu(符亚军), Xue-Min Wang(王雪敏), Wei-Dong Wu(吴卫东)

Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China

Received:2018-11-25 Revised:2019-05-06 Online:2019-08-05 Published:2019-08-05
Contact: Wei-Dong Wu E-mail:wuweidongding@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11404302) and the Laser Fusion Research Center Funds for Young Talents, China (Grant No. RCFPD1-2017-9).

摘要/Abstract

摘要： With the increasing interest in Cu₂O-based devices for photovoltaic applications, the energy band alignment at the Cu₂O/ZnO heterojunction has received more and more attention. In this work, a high-quality Cu₂O/ZnO heterojunction is fabricated on a c-Al₂O₃ substrate by laser-molecular beam epitaxy, and the energy band alignment is determined by x-ray photoelectron spectroscopy. The valence band of ZnO is found to be 1.97 eV below that of Cu₂O. A type-Ⅱ band alignment exists at the Cu₂O/ZnO heterojunction with a resulting conduction band offset of 0.77 eV, which is especially favorable for enhancing the efficiency of Cu₂O/ZnO solar cells.

关键词: Cu₂O, ZnO, x-ray photoelectron spectroscopy, laser-molecular beam epitaxy

Abstract: With the increasing interest in Cu₂O-based devices for photovoltaic applications, the energy band alignment at the Cu₂O/ZnO heterojunction has received more and more attention. In this work, a high-quality Cu₂O/ZnO heterojunction is fabricated on a c-Al₂O₃ substrate by laser-molecular beam epitaxy, and the energy band alignment is determined by x-ray photoelectron spectroscopy. The valence band of ZnO is found to be 1.97 eV below that of Cu₂O. A type-Ⅱ band alignment exists at the Cu₂O/ZnO heterojunction with a resulting conduction band offset of 0.77 eV, which is especially favorable for enhancing the efficiency of Cu₂O/ZnO solar cells.

Key words: Cu₂O, ZnO, x-ray photoelectron spectroscopy, laser-molecular beam epitaxy

中图分类号: (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Lq

82.80.Pv (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)) 77.55.hf (ZnO) 73.20.At (Surface states, band structure, electron density of states)

赵妍, 尹泓卜, 符亚军, 王雪敏, 吴卫东. Energy band alignment at Cu₂O/ZnO heterojunctions characterized by in situ x-ray photoelectron spectroscopy[J]. 中国物理B, 2019, 28(8): 87301-087301.

Yan Zhao(赵妍), Hong-Bu Yin(尹泓卜), Ya-Jun Fu(符亚军), Xue-Min Wang(王雪敏), Wei-Dong Wu(吴卫东). Energy band alignment at Cu₂O/ZnO heterojunctions characterized by in situ x-ray photoelectron spectroscopy[J]. Chin. Phys. B, 2019, 28(8): 87301-087301.

参考文献 38

[1]	Minami T, Nishi Y, Miyata T and Nomoto J 2011 Appl. Phys. Express 4 062301 doi: 10.1143/APEX.4.062301
[2]	Wick R and Tilley S D 2015 J. Phys. Chem. C 119 26243 doi: 10.1021/acs.jpcc.5b08397
[3]	Raebiger H, Lany S and Zunger A 2007 Phys. Rev. B: Condens. Matter 76 045209 doi: 10.1103/PhysRevB.76.045209
[4]	Lany S and Zunger A 2007 Phys. Rev. Lett. 98 045501 doi: 10.1103/PhysRevLett.98.045501
[5]	Minami T, Miyata T and Nishi Y 2014 Thin Solid Films 559 105 doi: 10.1016/j.tsf.2013.11.026
[6]	Lofeski J J 1956 J. Appl. Phys. 27 777 doi: 10.1063/1.1722483
[7]	Minami T, Nishi Y and Miyata T 2016 Appl. Phys. Express 9 052301 doi: 10.7567/APEX.9.052301
[8]	Sebastian S, Hellmann J C, Tilley S D, Graetzel M, Morasch J, Deuermeier J, Jaegermann W and Klein A 2016 ACS Appl. Mater. Interfaces 8 21824 doi: 10.1021/acsami.6b07325
[9]	Wilson S S, Tolstova Y, Scanlon D O, Watson G W, Atwater H A and Bosco J P 2014 Energy Environ. Sci. 7 3606 doi: 10.1039/C4EE01956C
[10]	Lin P, Chen X, Yan X, Zhang Z, Yuan H, Li P, Zhao Y and Zhang Y 2014 Nano Res. 7 860 doi: 10.1007/s12274-014-0447-6
[11]	Kang Z, Yan X, Wang Y, Bai Z, Liu Y, Zhang Z, Lin P, Zhang X, Yuan H, Zhang X and Zhang Y 2015 Sci. Rep. 5 7882 doi: 10.1038/srep07882
[12]	Xu C, Cao L, Su G, Liu W, Liu H, Yu Y and Qu X 2010 J. Hazard. Mater. 176 807 doi: 10.1016/j.jhazmat.2009.11.106
[13]	Ievskaya Y, Hoye R L Z, Sadhanala A, Musselman K and MacManus-Driscoll J L 2015 Sol. Energy Mater. Sol. Cells 135 43 doi: 10.1016/j.solmat.2014.09.018
[14]	Ishizuka S, Suzuki K, Okatomo Y, Yanagita M, Sakurai T, Akimoto K, Fujiwara N, Kobayashi H, Matsubara K and Niki S 2004 Phys. Status Solidi 4 1067
[15]	Mittiga A, Salza E, Sarto F, Tucci M and Vasanthi R 2006 Appl. Phys. Lett. 88 163502 doi: 10.1063/1.2194315
[16]	Tanaka H, Shimakawa T, Miyata T, Sato H and Minami T 2005 Appl. Surf. Sci. 244 568 doi: 10.1016/j.apsusc.2004.10.121
[17]	Minami T, Miyata T, Ihara K, Minamino Y and Tsukada S 2006 Thin Solid Films 494 47 doi: 10.1016/j.tsf.2005.07.167
[18]	Dong C J, Yu W X, Xu M, Cao J J, Chen C, Yu W W and Wang Y D 2011 J. Appl. Phys. 110 073712 doi: 10.1063/1.3641637
[19]	Zhang P F, Liu X L, Zhang R Q, Fan H B, Yang A L, Wei H Y, Jin P, Yang S Y, Zhu Q S and Wang Z G 2008 Appl. Phys. Lett. 92 012104 doi: 10.1063/1.2828860
[20]	Cho H, Douglas E A, Gila B P, Craciun V, Lambers E S, Ren F and Pearton S J 2012 Appl. Phys. Lett. 100 012105 doi: 10.1063/1.3673905
[21]	Fan H B, Sun G S, Yang S Y, Zhang P F, Zhang R Q, Wei H Y, Jiao C M, Liu X L, Chen Y H, Zhu Q S and Wang Z G 2008 Appl. Phys. Lett. 92 192107 doi: 10.1063/1.2926679
[22]	Kraut E, Grant R, Waldrop J and Kowalczyk S 1980 Phys. Rev. Lett. 44 1620 doi: 10.1103/PhysRevLett.44.1620
[23]	Alay J L, Hirose M 1997 J. Appl. Phys. 81 1606 doi: 10.1063/1.363895
[24]	Perego M and Seguini G 2011 J. Appl. Phys. 110 053711 doi: 10.1063/1.3624757
[25]	Su S C, Lu Y M, Zhang Z Z, Shan C X, Li B H, Shen D Z, Yao B, Zhang J Y, Zhao D X and Fan X W 2008 Appl. Phys. Lett. 93 082108 doi: 10.1063/1.2977478
[26]	You J B, Zhang X W, Zhang S G, Tan H R, Ying J, Yin Z G, Zhu Q S and Chu P K 2010 J. Appl. Phys. 107 083701 doi: 10.1063/1.3385384
[27]	Wang X J, Wang X L, Xiao H L, Wang C M, Feng C, Deng Q W, Qu S Q, Zhang J W, Hou X, Cai S J and Feng Z H 2013 Chin. Phys. Lett. 30 057101 doi: 10.1088/0256-307X/30/5/057101
[28]	Lu Y, Le Breton J C, Turban P, Lépine B, Schieffer P and Jézéquel G 2006 Appl. Phys. Lett. 88 042108 doi: 10.1063/1.2167847
[29]	Li Y F, Yao B, Lu Y M, Li B H, Gai Y Q, Cong C X, Zhang Z Z, Zhao D X, Zhang J Y, Shen D Z and Fan X W 2008 Appl. Phys. Lett. 92 192116 doi: 10.1063/1.2924279
[30]	Poulston S, Parlett P M, Stone P and Bowker M 1996 Surf. Interface Anal. 24 811 doi: 10.1002/(SICI)1096-9918(199611)24:12<811::AID-SIA191>3.0.CO;2-Z
[31]	Barman S R and Sarma D D 1992 J. Phys. Condens. Matter 4 7607 doi: 10.1088/0953-8984/4/37/008
[32]	Tobin J P, Hirschwald W and Cunningham J 1983 Appl. Surf. Sci. 16 441 doi: 10.1016/0378-5963(83)90085-5
[33]	Ichimura M, Song Y 2011 Jpn. J. Appl. Phys. 50 051002
[34]	Kramm B, Laufer A, Reppin D, Kronenberger A, Hering P, Polity A and Meyer B K 2012 Appl. Phys. Lett. 100 094102 doi: 10.1063/1.3685719
[35]	Yang M, Zhu L, Li Y, Cao L and Guo Y 2013 J. Alloys Compd. 578 143 doi: 10.1016/j.jallcom.2013.05.033
[36]	Wong L M, Chiam S Y, Huang J Q, Wang S J, Pan J S and Chim W K 2010 J. Appl. Phys. 108 033702 doi: 10.1063/1.3465445
[37]	Chen S J, Lin L M, Liu J Y, Lv P W, Wu X P, Zheng W F, Qu Y and Lai F C 2015 J. Alloys Compd. 644 378 doi: 10.1016/j.jallcom.2015.02.230
[38]	Nishi Y, Miyata T and Minami T 2013 Thin Solid Films 528 72 doi: 10.1016/j.tsf.2012.09.090

Energy band alignment at Cu₂O/ZnO heterojunctions characterized by in situ x-ray photoelectron spectroscopy

Energy band alignment at Cu₂O/ZnO heterojunctions characterized by in situ x-ray photoelectron spectroscopy

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 38

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Dong-Dong Cao(曹冬冬), Xue-Fei Pan(潘雪飞), Jun Zhang(张军), and Xue-Shen Liu(刘学深). Spectral shift of solid high-order harmonics from different channels in a combined laser field[J]. 中国物理B, 2023, 32(3): 34204-034204.
[2]	Qian-Qian Gong(宫倩倩), Yun-Long Zhao(赵云龙), Qi Zhang(张奇), Chun-Yong Hu(胡春永), Teng-Fei Liu(刘腾飞), Hai-Feng Zhang(张海峰), Guang-Chao Yin(尹广超)^†, and Mei-Ling Sun(孙美玲)^‡. High-quality CdS quantum dots sensitized ZnO nanotube array films for superior photoelectrochemical performance[J]. 中国物理B, 2022, 31(9): 98103-098103.
[3]	Ning Li(李宁), Xin Li(李鑫), Ming-Yue Zhang(张明越), Jing-Ying Miao(苗景迎), Shen-Cheng Fu(付申成), and Xin-Tong Zhang(张昕彤). Emerging of Ag particles on ZnO nanowire arrays for blue-ray hologram storage[J]. 中国物理B, 2022, 31(3): 36101-036101.
[4]	Yinzhe Liu(刘寅哲), Kewei Liu(刘可为), Jialin Yang(杨佳霖), Zhen Cheng(程祯), Dongyang Han(韩冬阳), Qiu Ai(艾秋), Xing Chen(陈星), Yongxue Zhu(朱勇学), Binghui Li(李炳辉), Lei Liu(刘雷), and Dezhen Shen(申德振). Boosting the performance of crossed ZnO microwire UV photodetector by mechanical contact homo-interface barrier[J]. 中国物理B, 2022, 31(10): 106101-106101.
[5]	Chi Sun(孙驰), Linyuan Zhao(赵林媛), Tingting Hao(郝婷婷), Renrong Liang(梁仁荣), Haitao Ye(叶海涛), Junjie Li(李俊杰), and Changzhi Gu(顾长志). Three-dimensional vertical ZnO transistors with suspended top electrodes fabricated by focused ion beam technology[J]. 中国物理B, 2022, 31(1): 16801-016801.
[6]	Qing-Fen Jiang(姜清芬), Jie Lian(连洁), Min-Ju Ying(英敏菊), Ming-Yang Wei(魏铭洋), Chen-Lin Wang(王宸琳), and Yu Zhang(张裕). Analysis of properties of krypton ion-implanted Zn-polar ZnO thin films[J]. 中国物理B, 2021, 30(9): 97801-097801.
[7]	Hongyu Ma(马宏宇), Kewei Liu(刘可为), Zhen Cheng(程祯), Zhiyao Zheng(郑智遥), Yinzhe Liu(刘寅哲), Peixuan Zhang(张培宣), Xing Chen(陈星), Deming Liu(刘德明), Lei Liu(刘雷), and Dezhen Shen(申德振). Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector[J]. 中国物理B, 2021, 30(8): 87303-087303.
[8]	Jia-Li Chen(陈佳丽), Pei-Yu Ji(季佩宇), Cheng-Gang Jin(金成刚), Lan-Jian Zhuge(诸葛兰剑), and Xue-Mei Wu(吴雪梅). Synthesis of SiC/graphene nanosheet composites by helicon wave plasma[J]. 中国物理B, 2021, 30(7): 75201-075201.
[9]	饶畅, 费泽元, 陈伟驱, 陈梓敏, 卢星, 王钢, 王新中, 梁军, 裴艳丽. Band alignment of p-type oxide/ε-Ga₂O₃ heterojunctions investigated by x-ray photoelectron spectroscopy[J]. 中国物理B, 2020, 29(9): 97303-097303.
[10]	郭德双, 李微, 王登魁, 孟兵恒, 房丹, 魏志鹏. High performance Cu₂O film/ZnO nanowires self-powered photodetector by electrochemical deposition[J]. 中国物理B, 2020, 29(9): 98504-098504.
[11]	Ateyyah M Al-Baradi, Fatimah A Altowairqi, A A Atta, Ali Badawi, Saud A Algarni, Abdulraheem S A Almalki, A M Hassanien, A Alodhayb, A M Kamal, M M El-Nahass. Structural and optical characteristic features of RF sputtered CdS/ZnO thin films[J]. 中国物理B, 2020, 29(8): 80702-080702.
[12]	高珊, 张重扬, 敖宏瑞, 姜洪源. Performance of beam-type piezoelectric vibration energy harvester based on ZnO film fabrication and improved energy harvesting circuit[J]. 中国物理B, 2020, 29(8): 88401-088401.
[13]	何伊妮, 邓联文, 覃婷, 廖聪维, 罗衡, 黄生祥. Surface potential-based analytical model for InGaZnO thin-film transistors with independent dual-gates[J]. 中国物理B, 2020, 29(4): 47102-047102.
[14]	张宝庆, 刘高鹏, 宗海涛, 付丽歌, 魏志飞, 杨晓炜, 曹国华. Influence of Zr₅₀Cu₅₀ thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films[J]. 中国物理B, 2020, 29(3): 37303-037303.
[15]	S Mourad, J El Ghoul, K Omri, K Khirouni. Erratum to “Indium doping effect on properties of ZnO nanoparticles synthesized by sol-gel method”[J]. 中国物理B, 2020, 29(3): 39901-039901.